SM5005 series
NIPPON PRECISION CIRCUITS--1
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5005 series are crystal oscillator module ICs, that incorporate high-frequency, low current consump-
tion oscillator and output buffer circuits. Highly accurate thin-film feedback resistors and high-frequency
capacitors are built-in, eliminating the need for external components to make a stable 3rd-harmonic oscillator.
FEATURES
s
High-frequency operation
s
3rd-harmonic oscillation
s
Capacitors CG, CD built-in
s
Standby function (oscillator stops)
s
Power-save pull-up resistor built-in
s
Inverter amplifier feedback resistor built-in
s
CMOS input level
s
8 mA (V
DD
= 2.7 V) drive capability
s
CMOS output duty level
s
Output three-state function
s
2.25 to 3.6 V supply voltage
s
Oscillator frequency output
s
8-pin VSOP (SM5005
V)
s
Chip form (CF5005
)
SERIES CONFIGURATION
ORDERING INFORMATION
V ersion
1
1. Chip form d evices have designation CF5005
.
R e c o m m e n d e d o p e r a t i n g
frequency (MHz)
gm ratio
Output duty
level
Output
current (mA)
Built-in capacitance (pF)
R
f
(k
)
V
D D
= 2.25 to
2.75 V
V
D D
= 2.7 to
3.6 V
C
G
C
D
S M 5 0 0 5 A L AV
60 to 70
70 to 100
1.0
C M O S
8
8
1 0
2.2
S M 5 0 0 5 A L B V
90 to 110
1.5
C M O S
8
6
6
3.3
S M 5 0 0 5 A L C V
2
2. Based on Preliminar y Constants Data from Cr ystal MFG.
107 to 125
1.5
C M O S
8
3
3
4.6
C F 5 0 0 5 A L D
3
3. Chip form only.
50 to 60
60 to 80
1.0
C M O S
8
8
1 0
3.5
D e vice
P a ck ag e
S M 5 0 0 5
V
8-pin V S O P
C F 5 0 0 5
1
Chip form
SM5005 series
NIPPON PRECISION CIRCUITS--3
PAD LAYOUT
(Unit :
m)
PINOUT
(Top View)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 0.92
1.31 mm
Chip thickness: 300 30 m
Chip base: V
D D
level
Q
VDD
XT
VSS
(0,0)
(920,1310)
X
Y
INH
XT
HA5005AL
1
XT
VSS
Q
VDD
NC
NC
0 0 5 A L
XT
INH
2
3
4
8
7
6
5
N u m b e r
N a m e
I/O
Description
P ad dimensions [m]
X
Y
1
I N H
I
Output state control input. Oscillator stopped when LOW . Pow er-saving pull-up
resistor built in
1 9 5
2 1 2
2
X T
I
Amplifier input.
Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and X T
3 8 5
2 1 2
3
X T
O
Amplifier output.
5 7 5
2 1 2
4
V S S
G r o u n d
7 6 6
2 1 2
5
Q
O
Output. Output frequency (f
O
)
7 6 5
1 1 5 2
6
N C
No connection
7
N C
No connection
8
V D D
Supply voltage
1 6 2
1 1 5 2
XT
VSS
VDD
Q
C
G
C
D
R
f 1
XT
INH
R
f 2
C
f
SM5005 series
NIPPON PRECISION CIRCUITS--4
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0 V
Recommended Operating Conditions
CF5005AL
V
SS
= 0 V, f
125MHz unless otherwise noted.
CF5005ALA/CF5005ALD
V
SS
= 0 V, f
70MHz unless otherwise noted.
SM5005AL
V
V
SS
= 0 V, f
125MHz unless otherwise noted.
P arameter
S y m b o l
Condition
Rating
Unit
Supply voltage ra n g e
V
D D
-
0.5 to 7.0
V
Input voltage ra n g e
V
IN
-
0.5 to V
D D
+ 0.5
V
Output voltage ra n g e
V
O U T
-
0.5 to V
D D
+ 0.5
V
O p e rating temperature ra n g e
T
opr
-
40 to 85
C
Storage temperature ra n g e
T
stg
Chip form
-
65 to 150
C
8-pin V S O P
-
40 to 125
Output current
I
O U T
2 5
m A
P ow er dissipation
P
D
8-pin V S O P
3 0 0
m W
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
Supply voltage
V
D D
C
L
15pF
2.7
3.6
V
C
L
30pF
3.0
3.6
Input voltage
V
IN
V
S S
V
D D
V
O p e rating temperature
T
O P R
-
2 0
8 0
C
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
Supply voltage
V
D D
C
L
30pF
2.25
2.75
V
Input voltage
V
IN
V
S S
V
D D
V
O p e rating temperature
T
O P R
-
2 0
8 0
C
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
Supply voltage
V
D D
C
L
15pF
2.7
3.6
V
Input voltage
V
IN
V
S S
V
D D
V
O p e rating temperature
T
O P R
-
2 0
8 0
C
SM5005 series
NIPPON PRECISION CIRCUITS--5
Electrical Characteristics
V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
-
20 to 80
C unless otherwise noted.
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
HIGH-level output voltage
V
O H
Q: Measurement cct 1, V
D D
= 2.7 V, I
O H
= 8 m A
2.2
2.4
V
L O W -level output voltage
V
O L
Q: Measurement cct 2, V
D D
= 2.7 V, I
O L
= 8 m A
0.3
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, I N H = L O W ,
V
D D
= 3.6 V
V
O H
= V
D D
1 0
A
V
O L
= V
S S
1 0
HIGH-level input voltage
V
IH
I N H
0.7V
D D
V
L O W -level input voltage
V
IL
I N H
0.3V
D D
V
Current consumption
I
D D
I N H = open,
Measurement cct 3,
load cct 1,
V
D D
= 3.0 V to 3.6 V
f = 125 M H z
C
L
= 30 p F
C F 5 0 0 5 A L
4 0
1 0 0
m A
C
L
= 15 p F
S M 5 0 0 5 A L
V
C F 5 0 0 5 A L
2 5
6 0
Standby current
I
S T
I N H = L O W , Measurement cct 3
1 0
A
I N H pull-up resistance
R
U P 1
Measurement cct 4, I N H = L O W
0.4
4
M
R
U P 2
Measurement cct 4, I N H = 0.7 V
D D
5 0
1 5 0
k
A C fe e d b a ck resistance
R
f1
Design value, determined by the internal
w afer pattern
S M 5 0 0 5 A L AV
C F 5 0 0 5 A L A
1.76
2.2
2.64
k
S M 5 0 0 5 A L B V
C F 5 0 0 5 A L B
2.64
3.3
3.96
S M 5 0 0 5 A L C V
C F 5 0 0 5 A L C
3.68
4.6
5.52
C F 5 0 0 5 A L D
2.80
3.5
4.20
DC fe e d b a ck resistance
R
f2
Measurement cct 5
5 0
1 5 0
k
A C fe e d b a ck capacitance
C
f
Design value, determined by the internal wafer pattern
9.3
1 0
10.7
p F
Built-in capacitance
C
G
Design value, determined by the internal
w afer pattern
S M 5 0 0 5 A L AV
C F 5 0 0 5 A L A
C F 5 0 0 5 A L D
7.44
8
8.56
p F
S M 5 0 0 5 A L B V
C F 5 0 0 5 A L B
5.58
6
6.42
S M 5 0 0 5 A L C V
C F 5 0 0 5 A L C
2.79
3
3.21
C
D
Design value, determined by the internal
w afer pattern
S M 5 0 0 5 A L AV
C F 5 0 0 5 A L A
C F 5 0 0 5 A L D
9.3
1 0
10.7
p F
S M 5 0 0 5 A L B V
C F 5 0 0 5 A L B
5.58
6
6.42
S M 5 0 0 5 A L C V
C F 5 0 0 5 A L C
2.79
3
3.21
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