DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
L-BAND PA DRIVER AMPLIFIER
GaAs INTEGRATED CIRCUIT
PG2134TB
Document No. PG10194EJ01V0DS (1st edition)
Date Published October 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
DESCRIPTION
The
PG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-
band application.
This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
super minimold package. And this package is able to high-density surface mounting.
FEATURES
Operation frequency
: f
opt
= 1 429 to 1 453 MHz (1 441 MHz TYP.)
Supply voltage
: V
DD1
= 2.7 to 3.3 V (3.0 V TYP.)
: V
DD2
= 2.7 to 4.2 V (3.5 V TYP.)
Circuit current
: I
DD
= 28 mA TYP. @ V
DD1
= 3.0 V, V
DD2
= 3.5 V, V
AGC
= 2.5 V, P
in
=
-
15 dBm
Power gain
: G
P
= 28 dB TYP. @ V
DD1
= 3.0 V, V
DD2
= 3.5 V, V
AGC
= 2.5 V, P
in
=
-
15 dBm
Gain control range
: GCR = 42 dB TYP. @ V
DD1
= 3.0 V, V
DD2
= 3.5 V, V
AGC
= 0.5 to 2.5 V,
P
in
=
-
15 dBm
Low distortion
: P
adj1
=
-
60 dBc TYP. @ V
DD1
= 3.0 V, V
DD2
= 3.5 V, V
AGC
= 2.5 V, P
out
= +10 dBm,
f = 1 441 MHz,
f =
50 kHz, 21 kHz Bandwidth
High-density surface mounting : 6-pin super minimold package (2.0
1.25
0.9 mm)
APPLICATION
Digital Cellular: PDC 1.5 GHz etc.
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
PG2134TB-E3
6-pin super minimold
G3B
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
PG2134TB
Data Sheet PG10194EJ01V0DS
2
PG2134TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Pin Name
1
V
DD1
2
GND
3
OUTPUT/V
DD2
4
V
AGC
5
GND
1
2
3
6
5
4
(Top View)
G3B
1
2
3
6
5
4
(Top View)
6
5
4
1
2
3
(Bottom View)
6
INPUT
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage1, 2
V
DD1, 2
6.0
V
Gain Control Voltage
V
AGC
6.0
V
Input Power
P
in
-
8
dBm
Power Dissipation
P
D
140
Note
mW
Operating Ambient Temperature
T
A
-
30 to +90
C
Storage Temperature
T
stg
-
35 to +150
C
Note Mounted on double-sided copper-clad 50
50
1.6 mm epoxy glass PWB, T
A
= +85
C
RECOMMENDED OPERATING RENGE (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Operating Frequency
f
opt
1 429
1 441
1 453
MHz
Supply Voltage1
V
DD1
2.7
3.0
3.3
V
Supply Voltage2
V
DD2
2.7
3.5
4.2
V
Gain Control Voltage
V
AGC
0
-
2.5
V
Input Power
P
in
-
-
15
-
10
dBm
Data Sheet PG10194EJ01V0DS
3
PG2134TB
ELECTRICAL CHARACTERISTICS
(T
A
= +25
C, V
DD1
= 3.0 V, V
DD2
= 3.5 V,
/4DQPSK modulated signal input, with external input and
output matching, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Operating Frequency
f
opt
1 429
1 441
1 453
MHz
Circuit Current
I
DD
P
in
=
-
15 dBm, V
AGC
= 2.5 V
-
28
35
mA
Power Gain
G
P
P
in
=
-
15 dBm, V
AGC
= 2.5 V
26
28
-
dB
Adjacent Channel Power Leakage 1
P
adj1
P
out
= +10 dBm, V
AGC
= 2.5 V,
f =
50 kHz, 21 kHz Bandwidth
-
-
60
-
55
dBc
Adjacent Channel Power Leakage 2
P
adj2
P
out
= +10 dBm, V
AGC
= 2.5 V,
f =
100 kHz, 21 kHz Bandwidth
-
-
70
-
65
dBc
Gain Control Range
GCR
P
in
=
-
15 dBm, V
AGC
= 0.5 to 2.5 V
37
42
-
dB
Gain Control Current
I
AGC
V
AGC
= 0.5 to 2.5 V
-
1
20
A
Data Sheet PG10194EJ01V0DS
4
PG2134TB
EVALUATION CIRCUIT
f = 1 441 MHz, V
DD1
= 3.0 V, V
DD2
= 3.5 V
3
OUTPUT
3 pF
100 pF
V
DD1
V
DD2
INPUT
V
AGC
10 000 pF
1 000 pF
2 pF
1 000 pF
1 nH
1 k
2.2 nH
8.2 nH
6.8 nH
2
1
4
5
6
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10194EJ01V0DS
5
PG2134TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
AGC AMP
Vagc
Vdd1
Vdd2
IN
OUT
L3
L2
L4
C5
C2
C4
R1
C1
L1
C3
C6
USING THE NEC EVALUATION BOARD
Symbol
Values
Part Number
Maker
C1, C3
1 000 pF
GRM39CH102J25PB
muRata
C2
3 pF
GRM39CH030C50PB
muRata
C4
2 pF
GRM39CH020C50PB
muRata
C5
100 pF
GRM39CH101J50PB
muRata
C6
10 000 pF
GRM39CH103J25PB
muRata
L1
2.2 nH
TFL0816-2N7
Susumu
L2
1.0 nH
TFL0816-1N0
Susumu
L3
6.8 nH
TFL0816-6N8
Susumu
L4
8.2 nH
TFL0816-8N2
Susumu
R1
1 k
RR0816P-102-D
Susumu
Data Sheet PG10194EJ01V0DS
6
PG2134TB
TYPICAL CHARACTERISTICS (T
A
= +25
C, unless otherwise specified)
Input Power P
in
(dBm)
Output Power P
out
(dBm), Circuit Current I
DD
(mA)
OUTPUT POWER, CIRCUIT CURRENT,
ADJACENT CHANNEL POWER LEAKAGE
vs. INPUT POWER
OUTPUT POWER vs. GAIN CONTROL VOLTAGE
Gain Control Voltage V
AGC
(V)
Output Power P
out
(dBm)
25
30
20
15
10
5
0
5
+5
+15
+25
+40
+35
0
+10
+20
+30
70
50
30
10
+20
+10
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
+15
+10
+5
0
5
10
15
20
25
30
35
P
adj1
P
out
I
DD
f = 1 441 MHz,
V
DD1
= 3.0 V, V
DD2
= 3.5 V,
V
AGC
= 2.5 V
f = 1 441 MHz,
V
DD1
= 3.0 V, V
DD2
= 3.5 V,
P
in
= 15 dBm
Adjacent Channel Power Leakage 1
P
adj1
@ f = 50 kHz (dBc)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10194EJ01V0DS
7
PG2134TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.90.1
0.7
0 to 0.1
0.15
+0.1 0.05
0.2
+0.1 0.05
2.00.2
1.3
0.65
0.65
1.250.1
2.10.1
0.1 MIN.
Data Sheet PG10194EJ01V0DS
8
PG2134TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220
C or higher
: 60 seconds or less
Preheating time at 120 to 180
C
: 120
30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215
C or below
Time at temperature of 200
C or higher
: 25 to 40 seconds
Preheating time at 120 to 150
C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120
C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350
C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10194EJ01V0DS
9
PG2134TB
M8E 00. 4 - 0110
The information in this document is current as of October 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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