PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15014EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
GaAs INTEGRATED CIRCUIT
PG2121TB
L-BAND UP/DOWN CONVERTER
2000
DESCRIPTION
The
PG2121TB is L-band up-converter or down-converter IC (LO Buff. Amp. + Passive Mixer). The device can
convert the RF frequency to IF frequency and operate low current. It housed in an original 6-pin super minimold
package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
+2.8 V single voltage
Low distortion (IIP
3
= +23 dBm TYP.)
Low current operation (I
DD
= 3.5 mA TYP.)
LO buffer amplifier and passive mixer on a single chip
6-pin super minimold package (Size: 2.0
1.25
0.9 mm)
APPLICATION
L-band digital cellular etc.
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
PG2121TB-E3
6-pin super minimold
G2E
Embossed tape 8 mm wide.
Pin 1 face the tape perforation side.
Qty 3kpcs / reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
PG2121TB)
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAS HJ-FET.
Preliminary Data Sheet P15014EJ1V0DS00
2
PG2121TB
PIN CONNECTIONS
Pin No.
Connection
Pin No.
Connection
1
RF or IF
4
LO IN
2
GND
5
GND
3
V
DD
6
IF or RF
6
5
4
1
2
3
1
2
3
6
5
4
1
2
3
6
5
4
Top View
Bottom View
Top View
G2E
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C)
Parameter
Symbol
Ratings
Unit
Supply Voltage
V
DD
6.0
V
LO Input Power
P
LO
+10
dBm
RF Input Power
P
RF
+10
dBm
Total Power Dissipation
P
tot
140
Note
mW
Operating Ambient Temperature
T
A
-
30 to +90
C
Storage Temperature
T
stg
-
35 to +150
C
Note Mounted on a 50
50
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
C
Preliminary Data Sheet P15014EJ1V0DS00
3
PG2121TB
ELECTRICAL CHARACTERISTICS (T
A
= +25
C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
V
DD
+2.7
+2.8
+3.0
V
RF Frequency
f
RF
810
-
960
MHz
IF Frequency
f
IF
50
-
400
MHz
LO Input Power
P
LO
-
10
-
5
0
dBm
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
C, V
DD
= 2.8 V, f
RF1
= 850 MHz, f
RF2
= 850.1 MHz, P
RF1
= P
RF2
=
-
-
-
-
3 dBm,
f
LO
= 940 MHz, P
LO
=
-
-
-
-
5 dBm, f
IF
= 90 MHz, f
IM3
= 90.1 MHz)
Parameter
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
Total Current
I
DD
-
3.5
4.5
mA
Conversion Loss
L
C
-
-
6.0
-
7.5
dB
3rd Order Distortion Input Intercept
Point
Note
IIP
3
+18
+23
-
dBm
3rd Order Intermoduration Distortion
IM
3
-
-
52
-
42
dBc
Local Leackage
L
LO
-
-
13
-
11
dBm
Note IIP
3
is determined by comparing two method; theoretical calculation and cross point of IM
3
curve.
IM
3
: P
IM3
gradient
Calculated as
IM
3
= 3
IM
3
P
RF
+ CG
-
P
IM3
IM
3
-
1
IIP
3
=
[dBm]
Preliminary Data Sheet P15014EJ1V0DS00
4
PG2121TB
EVALUATION CIRCUIT
T
A
= +25
C, V
DD
= +2.8 V, f = 850 MHz
IF
RF
V
DD
L
1
L
2
L
3
L
4
C
4
C
1
1
2
3
6
5
4
C
2
C
3
LO
G2E
EVALUATION BOARD
USING THE NEC EVALUATION BOARD
C
1
C
2
C
3
C
4
L
4
L
3
L
2
V
DD
LO
IF
RF
L
1
Values
Part Number
Maker
C
1
5 pF
GRM39CH 050 C50
muRata
C
2
33 pF
GRM36CH 330 J50
muRata
C
3
1 000 pF
GRM39B 102 K50
muRata
C
4
5 pF
GRM39CH 050 C50
muRata
L
1
6.8 nH
TFL0510 6N8
susumu
L
2
15 nH
TFL0816 15N
susumu
L
3
27 nH
TFL0816 27N
susumu
L
4
6.8 nH
TFL0816 6N8
susumu
Preliminary Data Sheet P15014EJ1V0DS00
5
PG2121TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
C)
TOTAL CURRENT vs. RF INPUT POWER
IF OUTPUT POWER, IM
3
,
vs. LOCAL INPUT POWER
IIP
3
, NOISE FIGURE, IM
3
, LOCAL LEAKAGE
TOTAL CURRENT, CONVERSION LOSS,
vs. RF FREQUENCY
LOSS, IIP
3
, IM
3
, LOCAL LEAKAGE,
TOTAL CURRENT, CONVERSION
Intermoduration Distortion IM
3
(dBc)
Total Current I
DD
(mA)
IF Output Power P
IF
(dBm), 3rd Order
Local Leackage L
LO
(dBm)
3rd Order Intermoduration Distortion IM
3
(dBc),
3rd Order Distortion Input Intercept Point IIP
3
(dBm),
Total Current I
DD
(mA), Conversion Loss L
C
(dB),
3rd Order Distortio Input Intercept Point IIP
3
(dBm)
Total Current I
DD
(mA), Conversion Loss L
C
(dB),
Noise Figure NF (dB)
RF Input Power P
RF
(dBm)
Local Input Power P
LO
(dBm)
RF Frequency f
RF
(MHz)
20
25
90
80
70
60
50
40
30
20
10
0
10
0
0
5
10
15
20
25
30
0
810 820 830 840 850 860 870 880 890 900
800
5
10
15
20
25
30
120
100
80
60
40
20
0
Local Leackage L
LO
(dBm)
3rd Order Intermoduration Distortion IM
3
(dBc),
120
100
80
60
40
20
0
1
2
3
4
5
6
7
8
9
10
15
10
5
0
5
10
15
25
20
15
10
5
0
5
10
15
V
DD
= 2.8 V, f
RF
= 850 MHz,
f
LO
= 940 MHz, f
IF
= 90 MHz,
P
LO
= 5 dBm
P
IF
IM
3
IM
3
I
DD
I
DD
I
DD
L
C
IM
3
L
LO
IIP
3
NF
IIP
3
L
LO
V
DD
= 2.8 V, f
RF
= 850 MHz,
f
LO
= 940 MHz, f
IF
= 90 MHz,
P
RF
= 3 dBm
V
DD
= 2.8 V, f
LO
= 895 to 985 MHz,
f
RF1
= 850 MHz, f
RF2
= 850.1 MHz,
f
IF
= 90 MHz, P
RF
= 3 dBm,
P
LO
= 5 dBm
L
C
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet P15014EJ1V0DS00
6
PG2121TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.90.1
0.7
0 to 0.1
0.15
+0.1 0.05
2.00.2
1.3
0.65
0.65
0.2
+0.1 0.05
2.10.1
1.250.1
0.1 MIN.
Preliminary Data Sheet P15014EJ1V0DS00
7
PG2121TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 C or below
Time: 30 seconds or less (at 210 C)
Count: 3, Exposure limit: None
Note
IR35-00-3
VPS
Package peak temperature: 215 C or below
Time: 40 seconds or less (at 200 C)
Count: 3, Exposure limit: None
Note
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 C or below
Time: 10 seconds or less
Count: 1, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 300 C
Time: 3 seconds or less (per side of device)
Exposure limit: None
Note
Note After opening the dry pack, keep it in a place below 25 C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
PG2121TB
CAUTION
The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
M8E 00. 4
The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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