DATA SHEET
GaAs INTEGRATED CIRCUIT
P
P
P
P
PG100P,
P
P
P
P
PG101P
WIDE BAND AMPLIFIER CHIPS
1992
Document No. P12402EJ2V0DS00 (2nd edition)
(Previous No. IC-3144)
Date Published February 1997 N
Printed in Japan
DATA SHEET
DESCRIPTION
P
PG100P and
P
PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are
available in chip form.
P
PG100P is low noise amplifier from 50 MHz to 3 GHz and
P
PG101P is a medium power amplifier in the same
frequency band. These devices are most suitable for the IF stage of microwave communication system and the
measurement equipment.
FEATURES
Wide band : f = 50 MHz to 3 GHz
ORDERING INFORMATION
PART NUMBER
FORM
P
PG100P
chip
P
PG101P
chip
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
P
PG100P
P
PG101P
Drain Voltage
V
DD
+8
+10
V
Gate Voltage
V
GG
8
8
V
Input Voltage
V
in
3 to +0.6
5 to +0.6
V
Input Power
P
in
+15
+15
dBm
Total Power Dissipation
P
tot
*1
1.5
1.5
W
Operating Temperature
T
opr
*2
65 to +125
65 to +125
C
Storage Temperature
T
stg
65 to +175
65 to +175
C
*1
Mounted with AuSn hard solder
*2
The temperature of base material baside the chip
2
P
P
P
P
PG100P,
P
P
P
P
PG101P
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
*3
P
PG100P (V
DD
= +5 V, V
GG
=
5 V)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Current
I
DD
30
45
60
mA
RF OFF
Gate Current
I
GG
0.7
1.5
mA
Power Gain
Gp
14
16
dB
f = 0.05 to 3 GHz
Gain Flatness
'
Gp
r
1.5
dB
Noise Figure
NF
2.7
3.5
dB
Input Return Loss
RL
in
7
10
dB
Output Return Loss
RL
out
7
10
dB
Isolation
I
SOL
30
40
dB
Output Power at 1 dB Gain
Compression Point
P
O(1 dB)
+3
+6
dBm
P
PG101P (V
DD
= +8 V, V
GG
=
5 V)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Current
I
DD
70
100
140
mA
RF OFF
Gate Current
I
GG
1.0
3.0
mA
Power Gain
Gp
12
14
dB
f = 0.05 to 3 GHz
Gain Flatness
'
Gp
r
1.5
dB
Noise Figure
NF
5
7
dB
Input Return Loss
RL
in
6
8
dB
Output Return Loss
RL
out
6
8
dB
Isolation
I
SOL
30
40
dB
Output Power at 1 dB Gain
Compression Point
P
O(1 dB)
+16
+18
dBm
*3
These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1.
3
P
P
P
P
PG100P,
P
P
P
P
PG101P
Fig. 1 8 Pin Ceramic Package
3
4
2
7
6
1
5
1.27
0.1 1.27
0.1
40.6
3.8
0.2
40.4
8
10.6 MAX.
1.7 MAX.
0.2
+0.05
0.02
4
P
P
P
P
PG100P,
P
P
P
P
PG101P
TYPICAL CHARACTERISTICS
*4
P
PG100P (V
DD
= +5 V, V
GG
=
5 V)
20
10
0
10
20
50
100 200
500 1000 2000 5000
10
5
POWER GAIN AND NOISE FIGURE vs.
FREQUENCY
f - Frequency - MHz
G
p
- Power Gain - dB
NF Noise Figure dB
T
A
= 25
C
T
A
= +25
C
T
A
= +75
C
G
p
NF
0
40
10
20
50
100 200
500 1000 2000 5000
INPUT AND OUTPUT RETURN LOSS vs.
FREQUENCY
f - Frequency - MHz
RL - Return Loss - dB
10
20
30
10
50
10
20
50
100 200
500 1000
5000
2000
ISOLATION vs. FREQUENCY
f - Frequency - MHz
I
SOL
- Isolation - dB
20
30
40
10
20
OUTPUT POWER vs. INPUT POWER
P
i
- Input Power - dBm
P
O
- Output Power - dBm
10
0
+10
0
RL
out
RL
in
f = 1 GHz
f = 2 GHz
f = 3 GHz
5
P
P
P
P
PG100P,
P
P
P
P
PG101P
P
PG101P (V
DD
= +8 V, V
GG
=
5 V)
0
10
20
50
100 200
500 1000 2000 5000
10
POWER GAIN AND NOISE FIGURE vs.
FREQUENCY
f - Frequency - MHz
G
p
- Power Gain - dB
NF - Noise Figure - dB
NF
10
20
G
p
0
40
10
20
50
100 200
500 1000 2000 5000
INPUT AND OUTPUT RETURN LOSS vs.
FREQUENCY
f - Frequency - MHz
RL - Return Loss - dB
10
20
30
RL
out
RL
in
10
60
10
20
50
100 200
500 1000 2000 5000
ISOLATION vs. FREQUENCY
f - Frequency - MHz
I
SOL
- Isolation - dB
20
30
40
0
10
OUTPUT POWER vs. INPUT POWER
P
i
- Input Power - dBm
P
O
- Output Power - dBm
0
10
20
10
5
0
50
T
A
= 25
C
T
A
= +25
C
T
A
= +75
C
f = 1 GHz
f = 2 GHz
f = 3 GHz
*4
These characteristics are measured for device mounted in the standard package shown in Fig. 1.
6
P
P
P
P
PG100P,
P
P
P
P
PG101P
CHIP DIMENSIONS
(Unit : mm)
P
PG100P
8
9
10
1
2
3
4
1.3
1: IN
2: GND
3: GND
4: V
GG
5: GND
6: GND
7: OUT
8: GND
9: V
DD
10: GND
1.0
5
6
7
Bonding Pad Size: 100 m
100 m
P
PG101P
8
9
10
1
2
3
4
1.3
1: IN
2: GND
3: GND
4: V
GG
5: GND
6: GND
7: OUT
8: GND
9: V
DD
10: GND
1.0
5
6
7
Bonding Pad Size: 100 m
100 m
7
P
P
P
P
PG100P,
P
P
P
P
PG101P
RECOMMENDED CHIP ASSEMBLY CONDITIONS
Die Attachment
Atmosphere
: N
2
gas
Temperature
: 320
r
5 C
AuSn Preform
: 0.5
u
0.5
u
0.05
t
(mm), 2 pcs.
* The hard solder such as AuSi or AuGe which has higher melting point than
AuSn should not be used.
Base Material
: CuW, Cu, KV
* Other material should not be used.
Epoxy Die Attach is not recommended.
Bonding
Machine
: TCB
* USB is not recommended
Wire
: 30
P
m diameter Au wire
Temperature
: 260
r
5 C
Strength
: 31
r
3 g
Atmosphere
: N
2
gas
QUALITY ASSURANCE (Refer to GET-30116)
1. 100 % Tests
1-1 100 % DC and RF Probe
1-2 Visual Inspection
MIL-STD-883/Method 2010 Condition B
2. Tests on Sampling Basis
2-1 Bond Pull Tests (In case of recommended chip handling)
MIL-STD-883 Method 2011
5 samples/wafer and 20 points tested
Accept 0/Reject 1
2-2 Tests in Standard Package
Test the electrical characteristics of chips assembled into the standard package used for
P
PG100B and
P
PG101B.
5 samples/wafer tested
DC and RF measurement Accept 1/Reject 2
3. WARRANTEE
NEC has a responsibility of quality assurance for the products within 180 days after delivered to customers where
these are handled properly and stored in the desicater with the flow of dry N
2
gas.
4. CAUTION
4-1 Take great care to prevent static electricity.
4-2 Be sure that Die Attach is performed in N
2
atmosphere.
P
P
P
P
PG100P,
P
P
P
P
PG101P
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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