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Электронный компонент: UPD16803GS

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1997
DATA SHEET
MOS INTEGRATED CIRCUIT
PD16803
Document No. S11452EJ2V0DS00 (2nd edition)
Date Published July 1997 N
Printed in Japan
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
PD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage.
By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage
and power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in a power-saving mode.
The
PD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
Low ON resistance (sum of ON resistors of top and bottom transistors)
R
ON1
= 1.5
TYP. (V
M
= 5.0 V)
R
ON2
= 2.0
TYP. (V
M
= 12.0 V)
Low current consumption: I
DD
= 0.4 mA TYP.
Stop mode function that turns OFF all output transistors
Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
1
3
4
5
6
7
8
9
10
C1H
C2L
1A
2A
PGND
V
M1
V
DD
INC
IN
1
IN
2
C1L
C2H
1B
2B
PGND
V
G
V
M2
DGND
R
X
PS
2
20
18
17
16
15
14
13
12
11
19
PD16803
2
ORDERING INFORMATION
Part Number
Package
PD16803GS
20-pin plastic SOP (300 mil)
BLOCK DIAGRAM
OSC
CIRCUIT
BAND GAP
REFERENCE
CHARGE
PUMP
LEVEL CONTROL
CIRCUIT
SWITCH
CIRCUIT
CONTROL
CIRCUIT
LEVEL
SHIFT
"H"
BRIDGE 2
"H"
BRIDGE 1
0.01 F
0.01 F
0.01 F
V
DD
R
X
V
G
2
V
DD
+ V
M
V
M1
V
M
V
M2
1A
1B
2A
2B
PGND
PGND
C1L
C2L
C1H
C2H
Connected in diffusion layer
Note 3
Note 2
PS
IN
1
IN
2
INC
50 k
50 k
50 k
50 k
DGND
Note 1
Notes 1. 3
V
DD
where V
M
V
DD
2. The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump
circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.
In the power-saving mode, the motor cannot turn.
3. It is recommended to connect an external capacitor of 0.22
F or more between V
M
and GND to stabilize
the operation.
PD16803
3
FUNCTION TABLE
Excitation Direction
INC
IN
1
IN
2
H
1
H
2
<1>
H
H
H
F
F
<2>
H
L
H
R
F
<3>
H
L
L
R
R
<4>
H
H
L
F
R
L
Stop
F: Forward
R: Reverse
For the excitation waveform timing chart, refer to APPLICATION EXAMPLE.
H
2
R
H
1
R
H
2
F
H
1
F
<4>
<1>
<2>
<3>
FORWARD
OFF
V
M
ON
ON
OFF
A
B
REVERSE
OFF
V
M
ON
ON
OFF
A
B
STOP
OFF
V
M
OFF
OFF
OFF
A
B
PD16803
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Rating
Unit
Supply voltage (motor block)
V
M
0.5 to +15
V
Supply voltage (control block)
V
DD
0.5 to +7
V
Power consumption
P
d1
1.0
Note 1
W
P
d2
1.25
Note 2
Instantaneous H bridge driver current
I
D
(pulse)
1.0
Note 2, 3
A
Input voltage
V
IN
0.5 to V
DD
+ 0.5
V
Operating temperature range
T
A
0 to 60
C
Operation junction temperature
T
jMAX
.
150
C
Storage temperature range
T
stg
55 to +125
C
Notes 1. IC only
2. When mounted on a printed circuit board (100
100
1 mm, glass epoxy)
3. t
5 ms, Duty
40 %
1.4
1.0
1.2
0.8
0.6
0.4
0.2
0
20
40
60
80
100
P
d
T
A
Characteristics
Average power consumption P
d
(W)
When mounted
on printed circuid boad
IC only
Ambient temperature T
A
(C)
PD16803
5
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply voltage (motor block)
V
M
4.0
5.0
13.2
V
Supply voltage (control block)
V
DD
4.0
5.0
6.0
V
R
X
pin connection resistance
R
X
2
k
H bridge driver current
Note
I
DR
380
mA
Charge pump capacitance
C
1
to C
3
5
20
nF
Operating temperature
T
A
0
60
C
Note When mounted on a printed circuit board (100
100
1 mm, glass epoxy)
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
OFF V
M
pin current
I
M
INC pin low
Note 1
V
M
= 6.0 V
1.0
A
V
DD
= 6.0 V
V
M
= 13.2 V
1.0
mA
V
DD
= 6.0 V
V
DD
pin current
I
DD
Note 2
0.4
1.0
mA
IN
1
, IN
2
, INC pin high-level
I
IH1
T
A
= 25
C, V
IN
= V
DD
1.0
A
input current
0
T
A
60
C, V
IN
= V
DD
2.0
IN
1
, IN
2
, INC pin low-level input
I
IL1
T
A
= 25
C, V
IN
= 0 V
0.15
mA
current
0
T
A
60
C, V
IN
= 0 V
0.2
PS pin high-level input current
I
IH2
T
A
= 25
C, V
IN
= V
DD
0.15
mA
0
T
A
60
C, V
IN
= V
DD
0.2
PS pin low-level input current
I
IL2
T
A
= 25
C, V
IN
= 0 V
1.0
A
0
T
A
60
C, V
IN
= 0 V
2.0
IN
1
, IN
2
, INC pin input pull-up
R
INU
T
A
= 25
C
35
50
65
k
resistance
0
T
A
60
C
25
75
PS pin input pull-down resistance
R
IND
T
A
= 25
C
35
50
65
k
0
T
A
60
C
25
75
Control pin high-level input voltage
V
IH
3.0
V
DD
+ 0.3
V
Control pin low-level input voltage
V
IL
0.3
0.8
V
H bridge circuit ON
R
ON1
V
DD
= 5 V, V
M
= 5 V
1.5
3.0
resistance
Note 3
R
ON2
V
DD
= 5 V, V
M
= 12 V
2.0
4.0
R
ON
relative accuracy
R
ON
Excitation direction <2>, <4>
Note 4
5
%
Excitation direction <1>, <3>
10
V
X
voltage in power-saving mode
Note 5
V
X
V
DD
= V
M
= 5 V, R
X
= 50 k
2.5
V
V
X
relative accuracy in
V
X
Excitation direction <2>, <4>
Note 4
5
%
power-saving mode
Excitation direction <1>, <3>
5
Charge pump circuit (V
G
) turn ON time
T
ONG
V
DD
= 5 V, V
M
= 5 V
0.3
2
ms
H bridge circuit turn ON time
T
ONH
C
1
= C
2
= C
3
= 10 nF
5
s
H bridge circuit turn OFF time
T
OFFH
R
M
= 20
5
s
Notes 1. When V
DD
< V
M
, a current (I
M1
) always flow from the V
M1
pin to the charge pump circuit because a gate voltage
(2
V
DD
+ V
M
) is generated.
2. When IN
1
= IN
2
= INC = "H", PS = "L"
3. Sum of ON resistances of top and bottom transistors
4. For the excitation direction, refer to FUNCTION TABLE.
5. V
X
is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in Function Table.
PD16803
6
CHARACTERISTIC CURVES
R
ON
vs. V
DD
(= V
M
) Characteristics
R
ON
vs. V
M
Characteristics
R
M
= 20
3
2
1
0
0
10
11
12
13
14
1
2
3
4
5
6
7
8
4.0
5.0
6.0
H bridge ON resistance R
ON
(
)
H bridge ON resistance R
ON
(
)
V
X
voltage in power-saving mode V
X
(V)
V
X
voltage in power-saving mode V
X
(V)
H bridge ON resistance R
ON
(
)
Supply voltage V
DD
(= V
M
) (V)
Supply voltage V
DD
(= V
M
) (V)
Operation junction temperature T
j
(C)
R
X
pin connection resistance R
X
(k
)
R
M
= 60
V
DD
= 4.5 V
V
DD
= 5.0 V
V
DD
= 5.5 V
Motor voltage V
M
(V)
R
ON
vs. T
j
Characteristics
V
X
vs. V
DD
(= V
M
) Characteristics
V
X
vs. R
X
Characteristics
3
2
1
0
25
50
75
100
125
150
V
DD
= V
M
= 5.0 V
R
M
= 20
R
X
= 50 k
R
M
= 20
V
DD
= V
M
= 5 V
R
M
= 20
V
X
: Note 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
160
3.0
2.5
2.0
4.0
5.0
6.0
PD16803
7
APPLICATION CIRCUIT EXAMPLE
1. Connection with 1-chip FDD LSI
PC2100AGF
PC2100AGF
OSC
CIRCUIT
BAND GAP
REFERENCE
CHARGE
PUMP
LEVEL CONTROL
CIRCUIT
SWITCH
CIRCUIT
CONTROL
CIRCUIT
LEVEL
SHIFT
"H"
BRIDGE 2
"H"
BRIDGE 1
0.01 F
0.22 F
0.01 F
0.01 F
V
DD
R
X
V
G
2
V
DD
+
V
M
V
M1
V
M
V
M2
1A
1B
2A
2B
PGND
PGND
C1L
C2L
C1H
C2H
Connected in diffusion layer
PS
IN
1
IN
2
INC
50 k
50 k
50 k
50 k
DGND
SPF0
PH11
PH21
PH11
PH21
STB0
Step input
Direction
Internal circumference seek
External circumference seek
PC2100AGF Stepping Motor Excitation Timing Chart
PD16803
8
2. Connection with 1-chip FDD LSI
PC2100AGF
OSC
CIRCUIT
BAND GAP
REFERENCE
CHARGE
PUMP
LEVEL CONTROL
CIRCUIT
SWITCH
CIRCUIT
CONTROL
CIRCUIT
LEVEL
SHIFT
"H"
BRIDGE 2
"H"
BRIDGE 1
0.01 F
0.22 F
0.01 F
0.01 F
V
DD
R
X
V
G
2
V
DD
+
V
M
V
M1
V
M
V
M2
1A
1B
2A
2B
PGND
PGND
C1L
C2L
C1H
C2H
Connected in diffusion layer
PS
IN
1
IN
2
INC
50 k
50 k
50 k
50 k
DGND
SPF0
PH11
PH21
PC2100AGF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
PD16803
9
20 PIN PLASTIC SOP (300 mil)
ITEM MILLIMETERS
INCHES
A
B
C
E
F
G
H
I
J
13.00 MAX.
1.27 (T.P.)
1.8 MAX.
1.55
7.70.3
0.78 MAX.
0.12
1.1
5.6
M
0.10.1
N
0.512 MAX.
0.031 MAX.
0.0040.004
0.071 MAX.
0.061
0.3030.012
0.220
0.043
0.005
0.050 (T.P.)
P20GM-50-300B, C-4
P
3
3
+7
NOTE
Each lead centerline is located within 0.12 mm (0.005 inch) of
its true position (T.P.) at maximum material condition.
D
0.40
0.016
+0.10
0.05
K
0.20
0.008
+0.10
0.05
L
0.60.2
0.024
0.10
3
+7
3
0.004
+0.008
0.009
+0.004
0.002
+0.004
0.003
A
C
D
G
P
detail of lead end
F
E
B
H
I
L
K
M
J
N
M
1
10
11
20
PD16803
10
RECOMMENDED SOLDERING CONDITIONS
It is recommended to solder this product under the conditions described below.
For soldering methods and conditions other than those listed below, consult NEC.
Surface mount type
For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting
Technology Manual (C10535E).
Soldering Method
Soldering Conditions
Symbol of Recommended
Soldering
Infrared reflow
Peak package temperature: 230
C, Time: 30 seconds MAX. (210
C MIN.),
IR30-00
Number of times: 1, Number of days: None
Note
VPS
Peak package temperature: 215
C, Time: 40 seconds MAX. (200
C MIN.),
VP15-00
Number of times: 1, Number of days: None
Note
Wave soldering
Solder bath temperature: 260
C MAX., Time: 10 seconds MAX.,
WS60-00
Number of times: 1, Number of days: None
Note
Partial heating
Pin temperature: 300
C MAX., Time: 10 seconds MAX.,
Number of days: None
Note
Note The number of storage days at 25
C, 65 % RH after the dry pack has been opened
Caution Do not use two or more soldering methods in combination (except partial heating).
PD16803
11
[MEMO]
2
PD16803
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
[MEMO]