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NPN SILICON RF TWIN TRANSISTOR
PA826TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2
2SC5010)
FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
FEATURES
Low noise and high gain
Operable at low voltage
Small feedback capacitance: C
re
= 0.4 pF TYP.
Flat-lead 6-pin thin-type ultra super minimold package
Built-in 2 transistors (2
2SC5010)
ORDERING INFORMATION
Part Number
Package
Quantity
Supplying Form
PA826TC
Loose products
(50 pcs)
PA826TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Taping products
(3 kp/reel)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
PA826TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
Note
180 in 1 element
230 in 2 elements
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to 150
C
Note Mounted on 1.08 cm
2
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
Data Sheet P14553EJ1V0DS00
2
PA826TC
ELECTRICAL CHARACTERISTICS (T
A
= +25 C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
-
-
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
-
-
0.1
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
75
-
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
10.0
12.0
-
GHz
Feedback Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
-
0.4
0.7
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
7.0
8.5
-
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
-
1.5
2.5
dB
Notes 1.
Pulse Measurement: PW
350
s, Duty Cycle
2%
2.
Capacitance between collector and base measured with a capacitance meter (auto
-
balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
KB
Marking
83
h
FE
Value
75 to 150
Data Sheet P14553EJ1V0DS00
3
PA826TC
TYPICAL CHARACTERISTICS (T
A
= +25
C)
Collector Current I
C
(mA)
DC Base Voltage V
BE
(V)
Total Power Dissipation P
T
(mW)
Ambient Temperature T
A
(
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain
S
21e
2
(dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
0
10
20
30
40
50
0
0.5
1.0
10
100
1 000
0.1
1
10
100
2.00
4.00
6.00
8.00
10.00
12.00
1
10
100
0
100
180
230
0
50
100
150
0
4
8
12
16
20
0
1
2
3
4
5
6
8.00
10.00
12.00
14.00
16.00
18.00
1
10
100
V
CE
= 3 V
200
2 Elements in total
Free Air
Per
Element
I
B
= 160 A
I
B
= 140 A
I
B
= 120 A
I
B
= 100 A
I
B
= 80 A
I
B
= 60 A
I
B
= 40 A
I
B
= 20 A
V
CE
= 3 V
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
f = 2 GHz
Data Sheet P14553EJ1V0DS00
4
PA826TC
Feedback Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
Noise Figure NF (dB)
Collector Current I
C
(mA)
NOISE FIGURE vs. COLLECTOR CURRENT
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Insertion Power Gain
S
21e
2
(dB)
Frequency f (GHz)
INSERTION POWER GAIN vs. FREQUENCY
0.00
2.00
4.00
6.00
8.00
10.00
1
10
100
0.000
0.100
0.200
0.300
0.400
1
10
100
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0.1
1.0
10.0
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
I
C
= 10 mA
f = 1 MHz
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