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confirm that this is the latest version.
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2003
MOS FET WITH SCHOTTKY BARRIER DIODE
PA507TE
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DATA SHEET
Document No. G16626EJ1V1DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
DESCRIPTION
The
PA507TE is a switching device, which can be driven
directly by a 1.8 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics and
a low forward voltage Schottky barrier diode, and is suitable
for applications such as DC/DC converter of portable machine
and so on.
FEATURES
1.8 V drive available (MOS FET)
Low on-state resistance (MOS FET)
R
DS(on)1
= 68 m
TYP. (V
GS
=
-4.5 V, I
D
=
-1.0 A)
R
DS(on)2
= 84 m
TYP. (V
GS
=
-2.5 V, I
D
=
-1.0 A)
R
DS(on)3
= 109 m
TYP. (V
GS
=
-1.8 V, I
D
=
-1.0 A)
Low forward voltage (Schottky barrier diode)
V
F
= 0.35 V TYP. (I
F
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA507TE
SC-95_5p (Mini Mold Thin Type)
Marking: ZA
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
100 V TYP. (C = 200 pF, R = 0 , Single pulse)
PIN CONNECTION (Top View)
1
2
3
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
2.8 0.2
1.5
0.95
1
2
3
5
4
1.9
0.4
2.9 0.2
0.32
+0.1
0.05
0.95
0.65
+0.1 0.15
The mark
shows major revised points.
Data Sheet G16626EJ1V1DS
2
PA507TE
MOS FET ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-20 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m8 V
Drain Current (DC)
I
D(DC)
m2 A
Drain Current (pulse)
Note1
I
D(pulse)
m8 A
Total Power Dissipation
Note2
P
T
0.57
W
Channel Temperature
T
ch
150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, t
5 sec.
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Repetitive Peak Reverse Voltage
V
RRM
30 V
Average Forward Current
Note3
I
F(AV)
1 A
Surge Current
Note4
I
FSM
10 A
Junction Temperature
T
j
+125
C
Storage Temperature
T
stg
-55 to +125 C
Notes 3. Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, t
5 sec
4. 50 Hz sine wave, 1 cycle
Data Sheet G16626EJ1V1DS
3
PA507TE
MOS FET ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-20 V, V
GS
= 0 V
-1
A
Gate Leakage Current
I
GSS
V
GS
=
m
8 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
-10 V, I
D
=
-1.0 mA
-0.45
-0.75
-1.50 V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
-10 V, I
D
=
-1.0 A
2.0
4.3
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
-4.5 V, I
D
=
-1.0 A
68
85
m
R
DS(on)2
V
GS
=
-2.5 V, I
D
=
-1.0 A
84
120
m
R
DS(on)3
V
GS
=
-1.8 V, I
D
=
-1.0
A
109 180 m
Input Capacitance
C
iss
V
DS
=
-10 V
380
pF
Output Capacitance
C
oss
V
GS
= 0 V
85
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
45
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-10 V, I
D
=
-1.0 A
10 ns
Rise Time
t
r
V
GS
=
-4.0 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
47 ns
Fall Time
t
f
28 ns
Total Gate Charge
Q
G
V
DD
=
-16
V
4.7 nC
Gate to Source Charge
Q
GS
V
GS
=
-4.0
V
0.9 nC
Gate to Drain Charge
Q
GD
I
D
=
-2.0
A
1.5 nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0 V
0.84
V
Note Pulsed: PW
350
s, Duty Cycle
2%
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
= 1.0 A
0.35
0.38
V
Reverse Current
I
R
V
R
= 10 V
200
A
Terminal Capacitance
C
T
f = 1.0 MHz, V
R
= 10 V
36
pF
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G16626EJ1V1DS
4
PA507TE
MOS FET TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT
TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
P
T
- Total Power Dissipation - W
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(at V
GS
=
-4.5 V)
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
5 s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(c
h-A)
- Transient Thermal Resistance -
C/W
1
10
100
1000
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
P
D
(FET) : P (SBD) = 1: 0
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16626EJ1V1DS
5
PA507TE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current - A
0
- 2
- 4
- 6
- 8
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
Pulsed
-2.5 V
V
GS
=
-4.5 V
-1.8 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current - A
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
0
- 0.5
- 1
- 1.5
- 2
V
DS
=
-10 V
Pulsed
T
A
= 125C
75C
25C
-25C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
- Gate Cut-off Voltage - V
- 0.4
- 0.5
- 0.6
- 0.7
- 0.8
- 0.9
- 1
- 50
0
50
100
150
V
DS
=
-10 V
I
D
=
-1.0 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward Transfer Admittance - S
0.1
1
10
- 0.01
- 0.1
- 1
- 10
V
DS
=
-10 V
Pulsed
T
A
=
-25C
25C
75C
125C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
50
100
150
200
- 0.01
- 0.1
- 1
- 10
Pulsed
V
GS
=
-1.8 V
-2.5 V
-4.5 V
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
0
50
100
150
200
0
- 2
- 4
- 6
- 8
I
D
=
-1.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet G16626EJ1V1DS
6
PA507TE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
50
100
150
200
- 50
0
50
100
150
V
GS
=
-1.8 V
-2.5 V
-4.5 V
I
D
=
-1.0 A
Pulsed
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
- 0.1
- 1
- 10
V
DD
=
-10 V
V
GS
=
-4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
0
- 1
- 2
- 3
- 4
0
1
2
3
4
5
I
D
=
-1.0 A
V
DD
=
-4.0 V
-10 V
-16 V
Q
G
- Gate Change - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Diode Forward Current - A
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
Pulsed
V
GS
= 0 V
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G16626EJ1V1DS
7
PA507TE
SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T
A
= 25C)
FORWARD CURRENT vs. FORWARD VOLTAGE
REVERSE CURRENT vs. REVERSE VOLTAGE
I
F
- Forward Current - A
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
Pulsed
T
A
= 125C
75C
25C
-25C
V
F
- Forward Voltage - V
I
R
- Rev
e
rs
e Current - mA
0.0001
0.001
0.01
0.1
1
10
100
0
10
20
30
40
Pulsed
-25C
25C
75C
T
A
= 125C
V
R
- Reverse Voltage - V
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
C
T
- Terminal Capacitance - pF
10
100
1000
0.1
1
10
100
f = 1.0 MHz
V
R
- Reverse Voltage - V
PA507TE
The information in this document is current as of December, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
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