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2001
MOS FIELD EFFECT TRANSISTOR
PA1857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
G15060EJ2V0DS00 (2nd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
DESCRIPTION
The
PA1857 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Low on-state resistance
R
DS(on)1
= 67.0 m
MAX. (V
GS
= 10 V, I
D
= 2.0 A)
R
DS(on)2
= 86.0 m
MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
R
DS(on)3
= 95.0 m
MAX. (V
GS
= 4.0 V, I
D
= 2.0 A)
Low
C
iss
C
iss
= 580 pF TYP.
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1857GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
3.8
A
Drain Current (pulse)
Note1
I
D(pulse)
15.2
A
Total Power Dissipation
(1unit)
Note2
P
T1
1.0
W
Total Power Dissipation
(2unit)
Note2
P
T2
1.7
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note3
I
AS
3.8
A
Single Avalanche Energy
Note3
E
AS
33
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. T
A
= 25C Mounted on ceramic substrate of 50 cm
2
x 1.1
mm
3. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
,
V
GS
= 20
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145
0.055
0.1
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Data Sheet G15060EJ2V0DS
2
PA1857
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 2.0
A
2.5
5.4
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 2.0
A
53
67.0
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 2.0
A
64
86.0
m
R
DS(on)3
V
GS
= 4.0
V, I
D
= 2.0
A
71
95.0
m
Input Capacitance
C
iss
V
DS
= 10
V
580
pF
Output Capacitance
C
oss
V
GS
= 0
V
100
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30
V, I
D
= 2.0
A
10
ns
Rise Time
t
r
V
GS
= 10
V
9
ns
Turn-off Delay Time
t
d(off)
R
G
= 6
32
ns
Fall Time
t
f
4
ns
Total Gate Charge
Q
G
V
DD
= 48
V
12
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
2
nC
Gate to Drain Charge
Q
GD
I
D
= 3.8
A
3
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.8
A, V
GS
= 0
V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 3.8
A, V
GS
= 0
V
33
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
58
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS(on)
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G15060EJ2V0DS
3
PA1857
TYPICAL CHARACTERISTICS (T
A
= 25C)
5
25
50
75
100
125
150
20
40
60
80
100
120
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
25
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Single Pulse
Mounted on Ceramic
Board of 50 cm x1.1 mm
2unit:
P
D
(FET1) : P
D
(FET2) = 1 : 1
2
2unit
1unit
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.2
0
0.8
1.0
0.4
0.6
0
4
8
12
16
4.5 V
V
GS
= 10 V
4.0 V
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1
2
3
4
100
25C
75C
V
GS
- Gate to Source Voltage - V
-
25C
V
DS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
T
A
= 125C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
50
100
0
150
1
1.5
2
2.5
3
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
- Drain Current - A
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse Mounted on Ceramic
Board of 50 cm x1.1 mm
P
D
(FET1) : P
D
(FET2) = 1 : 1
2
10 m
s
100 ms
DC
(1unit)
DC
(2unit)
1 ms
R
DS(on)
Limited
(@V
GS
=
10 V)
I
D(pulse)
I
D(DC)
PW
= 100
s
Data Sheet G15060EJ2V0DS
4
PA1857
1
10
100
0.1
V
DS
= 10 V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.10
0.010
0.01
100
75C
125C
25C
T
A
=
-
25C
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
V
GS
= 4.0 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
V
GS
= 4.5 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
V
GS
= 10 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
I
D
= 2.0 A
-
50
0
50
100
150
10
30
50
70
90
110
130
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
= 4.0 V
4.5 V
10 V
0
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
= 2.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Data Sheet G15060EJ2V0DS
5
PA1857
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
f = 1 MHz
C
iss
C
rss
C
oss
0.1
1
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
100
1
SWITCHING CHARACTERISTICS
V
DD
= 30 V
V
GS(on)
= 10 V
R
G
= 6
t
d(off)
t
d(on)
t
f
t
r
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Body Diode Forward Voltage - V
V
GS
= 0 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0
10
100
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
2
4
6
8
10
12
2
4
6
8
10
12
V
DD
= 48 V
30 V
12 V
I
D
= 3.8 A
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