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2002
MOS FIELD EFFECT TRANSISTOR
PA1818
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
G16254EJ1V0DS00 (1st edition)
Date Published
September 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
PA1818 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 15.2 m
MAX. (V
GS
=
-
4.5 V, I
D
=
-
5.0 A)
R
DS(on)2
= 16 m
MAX. (V
GS
=
-
4.0 V, I
D
=
-
5.0 A)
R
DS(on)3
= 25 m
MAX. (V
GS
=
-
2.5 V, I
D
=
-
5.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1818GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
12
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
m
10
A
Drain Current (pulse)
Note1
I
D(pulse)
m
40
A
Total Power Dissipation
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145
0.055
0.1
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8: Drain
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G16254EJ1V0DS
2
PA1818
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-
20
V, V
GS
= 0
V
-
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
m
12
V, V
DS
= 0
V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
-
10
V, I
D
=
-
1.0 mA
-
0.5
-
1.1
-
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
-
10
V, I
D
=
-
5.0
A
12
24
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
-
4.5
V, I
D
=
-
5.0 A
12.1
15.2
m
R
DS(on)2
V
GS
=
-
4.0
V, I
D
=
-
5.0
A
12.7
16
m
R
DS(on)3
V
GS
=
-
2.5
V, I
D
=
-
5.0
A
18.8
25
m
Input Capacitance
C
iss
V
DS
=
-
10
V
2200
pF
Output Capacitance
C
oss
V
GS
= 0
V
510
pF
Reverse Transfer Capacitance
C
rss
f = 1.0
MHz
310
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-
10
V, I
D
=
-
5.0
A
23
ns
Rise Time
t
r
V
GS
=
-
4.0
V
207
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
139
ns
Fall Time
t
f
193
ns
Total Gate Charge
Q
G
V
DD
=
-
16
V
20
nC
Gate to Source Charge
Q
GS
V
GS
=
-
4.0 V
5.0
nC
Gate to Drain Charge
Q
GD
I
D
=
-
10
A
6.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10
A, V
GS
= 0
V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 10
A, V
GS
= 0
V
44
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
28
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS (
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10 %
0
0
90 %
90 %
90 %
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 % 10 %
Data Sheet G16254EJ1V0DS
3
PA1818
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
-
T
o
ta
l
Po
w
e
r
D
i
ssi
p
at
i
on - W
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
-
4.5 V)
DC
Single pulse
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
0.1
1
10
100
1000
Single pulse
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
125
C/W
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
62.5C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16254EJ1V0DS
4
PA1818
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
- 10
- 20
- 30
- 40
0
- 0.2
- 0.4
- 0.6
- 0.8
Pulsed
-
2.5 V
V
GS
=
-
4.5 V
-
4.0 V
I
D
- Drai
n Current
- A
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
- 100
- 0.5
- 1
- 1.5
- 2
- 2.5
V
DS
=
-
10 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
- 0.4
- 0.6
- 0.8
- 1
- 1.2
- 1.4
-50
0
50
100
150
V
DS
=
-
10 V
I
D
=
-
1.0 mA
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
- 100
V
DS
=
-
10 V
Pulsed
T
A
=
-
25
C
25
C
75
C
125
C
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
0
10
20
30
-50
0
50
100
150
I
D
=
-
5.0 A
Pulsed
-
4.0 V
-
4.5 V
V
GS
=
-
2.5 V
0
10
20
30
0
-2
-4
-6
-8
-10
-12
I
D
=
-
5.0 A
Pulsed
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
Channel Temperrature -
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet G16254EJ1V0DS
5
PA1818
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0
10
20
30
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
=
-
4.5 V
Pulsed
T
A
= 125
C
75C
25C
-25C
0
10
20
30
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
=
-
4.0 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
=
-
2.5 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
100
1000
10000
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
C
is
s
,
C
os
s
,
C
rs
s
- Ca
p
ac
i
t
anc
e -
p
F
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
100
1000
10000
- 0.01
- 0.1
- 1
- 10
V
DD
=
-
10 V
V
GS
=
-
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
V
GS
= 0 V
Pulsed
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
I
D
- Drain Current - A
I
F
- Di
ode Forw
ard Current
- A
V
F(S-D)
- Source to Drain Voltage - V
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