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MOS FIELD EFFECT TRANSISTOR
PA1806
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16248EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The
PA1806 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 8.5 m
MAX. (V
GS
= 10 V, I
D
= 6.0 A)
R
DS(on)2
= 11.5 m
MAX. (V
GS
= 4.5 V, I
D
= 6.0 A)
R
DS(on)3
= 13 m
MAX. (V
GS
= 4.0 V, I
D
= 6.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1806GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
13
A
Drain Current (pulse)
Note1
I
D(pulse)
52
A
Total Power Dissipation
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 5000 mm
2
x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145
0.055
0.1
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8: Drain
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.1 0.05
1.0 0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G16248EJ1V0DS
2
PA1806
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 6.0 A
9.0
18
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 6.0 A
6.9
8.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 6.0 A
8.6
11.5
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 6.0 A
9.6
13
m
Input Capacitance
C
iss
V
DS
= 10 V
1460
pF
Output Capacitance
C
oss
V
GS
= 0 V
570
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
200
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 6.0 A
18
ns
Rise Time
t
r
V
GS
= 10 V
14
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
58
ns
Fall Time
t
f
19
ns
Total Gate Charge
Q
G
V
DD
= 24 V
28
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
4.1
nC
Gate to Drain Charge
Q
GD
I
D
= 13 A
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 13 A, V
GS
= 0 V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 13 A, V
GS
= 0 V
38
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
33
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
Data Sheet G16248EJ1V0DS
3
PA1806
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on - W
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.01
0.1
1
10
100
0.1
1
10
100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
= 10 V)
DC
Single pulse
Mounted on ceramic
substrate of
5000 mm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
1
10
100
1000
Single pulse
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
125C/W
Mounted on ceramic substrate
of 5000 mm
2
x 1.1 mm
62.5C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16248EJ1V0DS
4
PA1806
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
Pulsed
4.0 V
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
0.0001
0.001
0.01
0.1
1
10
100
1
1.5
2
2.5
3
3.5
V
DS
= 10 V
Pulsed
T
A
= 125C
75C
25C
-
25C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
C
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
0.01
0.1
1
10
100
T
A
=
-
25C
25C
75C
125C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
4
8
12
16
20
-50
0
50
100
150
I
D
= 6.0 A
Pulsed
10 V
4.5 V
V
GS
= 4.0 V
T
ch
- Channel Temperature - C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
4
8
12
16
20
0
2
4
6
8
10
Pulsed
I
D
= 6.0 A
V
GS
- Gate to Source Voltage - V
Data Sheet G16248EJ1V0DS
5
PA1806
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
4
8
12
16
20
0.01
0.1
1
10
100
Pulsed
4.5 V
10 V
V
GS
= 4.0 V
I
D
- Drain Current - A
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
10000
0.01
0.1
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
I
F
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0.5
0.6
0.7
0.8
0.9
1
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
0
2
4
6
8
10
0
5
10
15
20
25
30
I
D
= 13 A
V
DD
= 24 V
15 V
6.0 V
Q
G
- Gate Charge - nC
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