ChipFind - документация

Электронный компонент: UPA1793

Скачать:  PDF   ZIP

Document Outline

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR






PA1793
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
PA1793 is N- and P-Channel MOS Field Effect Transistors
designed for Motor Drive application.
FEATURES
Low on-state resistance
N-Channel R
DS(on)1
= 69 m
MAX. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)2
= 72 m
MAX. (V
GS
= 4.0 V, I
D
= 1.5 A)
R
DS(on)3
= 107 m
MAX. (V
GS
= 2.5 V, I
D
= 1.0 A)
P-Channel R
DS(on)1
= 115 m
MAX. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)2
= 120 m
MAX. (V
GS
= 4.0 V, I
D
= 1.5 A)
R
DS(on)3
= 190 m
MAX. (V
GS
= 2.5 V, I
D
= 1.0 A)
Low input capacitance
N-Channel C
iss
= 160 pF TYP.
P-Channel C
iss
= 370 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1793G
Power SOP8
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 Max.
0.05 Min.
1.8 Max.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 Max.
0.10
1
4
8
5
1
2
7, 8
3
4
5, 6
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
N-Channel
P-Channel
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
P-Channel
N-Channel
DataSheet G16059EJ1V0DS
2



PA1793
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, All terminals are connected.)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
12
m
12
V
Drain Current (DC)
I
D(DC)
3
m
3
A
Drain Current (pulse)
Note1
I
D(pulse)
12
m
12
A
Total Power Dissipation (1 unit)
Note2
P
T
1.7
W
Total Power Dissipation (2 units)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 5500 mm
2
2.2 mm, T
A
= 25C
DataSheet G16059EJ1V0DS
3



PA1793
ELECTRICAL CHARACTERISTICS (T
A
= 25C, All terminals are connected.)
A) N-Channel
Characteristice
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
12 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
=1.5 A
1.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 1.5 A
55
69
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 1.5 A
57
72
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 1.0 A
78
107
m
Input Capacitance
C
iss
V
DS
= 10 V
160
pF
Output Capacitance
C
oss
V
GS
= 0 V
60
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
40
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 1.5 A
17
ns
Rise Time
t
r
V
GS
= 4.0 V
50
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
86
ns
Fall Time
t
f
80
ns
Total Gate Charge
Q
G
V
DD
= 16 V
3.1
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
0.7
nC
Gate to Drain Charge
Q
GD
I
D
= 3.0 A
1.4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.0 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
I
F
= 3 A, V
GS
= 0 V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
12
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
DataSheet G16059EJ1V0DS
4



PA1793
B) P-Channel
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
m
12 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.5 A
1.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 1.5 A
75
115
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 1.5 A
80
120
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 1.0 A
116
190
m
Input Capacitance
C
iss
V
DS
= 10 V
370
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
40
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 1.5 A
120
ns
Rise Time
t
r
V
GS
= 4.0 V
260
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
410
ns
Fall Time
t
f
360
ns
Total Gate Charge
Q
G
V
DD
= 10 V
3.4
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
1.3
nC
Gate to Drain Charge
Q
GD
I
D
= 3.0 A
1.6
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.0 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
I
F
= 3 A, V
GS
= 0 V
24
ns
Reverse Recovery Charge
Q
rr
di/dt = 10 A/
s
1.5
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS (
-
)
V
DS (
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
V
GS
Wave Form
V
DS
Wave Form
V
GS (
-
)
V
DS (
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
DataSheet G16059EJ1V0DS
5



PA1793
TYPICAL CHARACTERISTICS (T
A
= 25C)
A) N-Channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
0
25
50
75
100
125
150
175
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
25
50
75
100
125
150
175
Mounted on ceramic substrate of
5500 mm
2
x 2.2 mm
2 units
1 unit
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.01
0.1
1
10
100
0.1
1
10
100
I
D(pulse)
T
A
= 25
C
Single pulse
10 m s
Power dissipation
limited
I
D(DC)
PW = 100
s
1 m s
DC
R
DS(on)
limited
(at V
GS
= 4.5 V)
Mounted on ceramic substrate
of 5500 mm
2
x 2.2 mm , 1 unit
100 m s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
0.01
0.1
1
10
100
1000
Mounted on ceramic substrate of
5500 mm
2
x 2.2 mm
Single pulse, 1 unit, T
A
= 25
C
R
th(ch-A)
= 73.5
C/W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
DataSheet G16059EJ1V0DS
6



PA1793
A) N-Channel
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drai
n Current
- A
0.01
0.1
1
10
0
1
2
3
V
DS
= 10 V
Pulsed
T
ch
= 125
C
75
C
25
C
-
25
C
V
GS
- Gate to Source Voltage - V
I
D
- Drai
n Current
- A
0
2
4
6
8
10
12
14
0
0.5
1
1.5
2
2.5
3
V
GS
= 4.5 V
Pulsed
4.0 V
2.5 V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
ch
= 125
C
75
C
25
C
-
25
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
50
100
150
200
0
2
4
6
8
10
12
Pulsed
I
D
= 3 A
1.5 A
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
50
100
150
0.1
1
10
100
4.0 V
Pulsed
4.5 V
V
GS
= 2.5 V
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
T
ch
- Channel Temperature -
C
DataSheet G16059EJ1V0DS
7



PA1793
A) N-Channel
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
50
100
150
-50
0
50
100
150
V
GS
= 2.5 V
4.5 V
4.0 V
Pulsed
0.01
0.1
1
10
100
0
0.5
1
Pulsed
V
GS
= 4.5 V
0 V
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
I
F
- Di
ode Forw
ard Current
- A
V
F(S-D)
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
0.1
1
10
100
V
DD
= 10 V
V
GS
= 4 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERITICS
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
1
10
100
1000
0.1
1
10
100
di/dt = 50 A/
s
V
GS
= 0 V
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
4
8
12
16
20
0
1
2
3
4
0
1
2
3
4
5
I
D
= 3 A
V
DS
V
GS
V
DD
= 16 V
10 V
4 V
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
I
F
- Diode Forward Current - A
Q
G
- Gate Charge - nC
DataSheet G16059EJ1V0DS
8



PA1793
B) P-Channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
0
25
50
75
100
125
150
175
P
T
-
To
ta
l Po
w
e
r
D
i
ssi
p
at
i
on - W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
25
50
75
100
125
150
175
Mounted on ceramic substrate of
5500 mm
2
x 2.2 mm
1 unit
2 units
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
I
D(pulse)
T
A
= 25
C
Single pulse
10 ms
Power dissipation
limited
I
D(DC)
PW = 100
s
1 ms
DC
R
DS(on)
limited
(at V
GS
=
-
4.5 V)
Mounted on ceram ic substrate
of 5500 m m
2
x 2.2 mm , 1 unit
100 ms
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
0.01
0.1
1
10
100
1000
M ounted on ceram ic substrate of
5500 m m
2
x 2.2 m m
Single pulse, 1 unit, T
A
= 25
C
R
th(ch-A )
= 73.5
C /W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
DataSheet G16059EJ1V0DS
9



PA1793
B) P-Channel
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drai
n Current
- A
- 0.01
- 0.1
- 1
- 10
0
- 1
- 2
- 3
V
DS
=
-
10 V
Pulsed
T
ch
= 125
C
75
C
25
C
-
25
C
V
GS
- Gate to Source Voltage - V
I
D
- Drai
n Current
- A
0
- 2
- 4
- 6
- 8
- 10
- 12
- 14
0
- 0.5
- 1
- 1.5
- 2
- 2.5
- 3
V
GS
=
-
4.5 V
Pulsed
-
4.0 V
-
2.5 V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
V
DS
=
-
10 V
Pulsed
T
ch
= 125
C
75
C
25
C
-
25
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
0
- 2
- 4
- 6
- 8
- 1 0
- 1 2
P u ls e d
I
D
=
-
3 A
-
1 .5 A
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
- 0 .1
- 1
- 1 0
- 1 0 0
-
4 .0 V
P u ls e d
-
4 .5 V
V
G S
=
-
2 .5 V
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
- 1.2
- 1.4
-50
0
50
100
150
V
D S
=
-
10 V
I
D
=
-
1 m A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
T
ch
- Channel Temperature -
C
DataSheet G16059EJ1V0DS
10



PA1793
) P-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
5 0
1 0 0
1 5 0
2 0 0
-5 0
0
5 0
1 0 0
1 5 0
V
G S
=
-
2 .5 V
-
4 .5 V
-
4 .0 V
P u ls e d
- 0.01
- 0.1
- 1
- 10
- 100
0
0.5
1
Pulsed
V
GS
=
-
4.5 V
0 V
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
I
F
- Di
ode Forw
ard Current
- A
V
F(S-D)
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
10
100
1000
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1 M Hz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
10
100
1000
10000
- 0.1
- 1
- 10
- 100
V
D D
= -10 V
V
G S
=
-
4 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERITICS
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
1
10
100
- 0.1
- 1
- 10
- 100
di/dt = 10 A/
s
V
GS
= 0 V
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
- 4
- 8
- 12
- 16
- 20
0
1
2
3
4
0
- 1
- 2
- 3
- 4
- 5
I
D
= 3 A
V
D S
V
GS
V
D D
= 16 V
10 V
4 V
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
I
F
- Diode Forward Current - A
Q
G
- Gate Charge - nC
DataSheet G16059EJ1V0DS
11



PA1793
[MEMO]



PA1793
M8E 00. 4
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special":
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).