NE856M03
NPN SILICON TRANSISTOR
NEW M03 PACKAGE:
Smallest transistor outline package available
Low profile/0.59 mm package height
Flat lead style for better RF performance
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
HIGH COLLECTOR CURRENT:
I
CMAX
= 100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PRELIMINARY DATA SHEET
PART NUMBER
NE856M03
EIAJ
1
REGISTERED NUMBER
2SC5432
PACKAGE OUTLINE
M03
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
3.0
4.5
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.4
2.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
7.0
10.0
h
FE2
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
80
145
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
1.0
C
RE3
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.7
1.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
1
3
2
1.20.05
0.80.1
+0.1
-0.05
0.15
1.4 0.1
(0.9)
0.590.05
0.20.1
0.45
0.45
0.30.1
TC
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE856M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
12
V
EBO
Emitter to Base Voltage
V
3
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
mW
125
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
NE856M03
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
IM
2
, IM
3
(dB)
NE856M03 INTERMODULATION
DISTORTION vs. COLLECTOR CURRENT
V
CE
= 10 V
1 2 3 5 7 10 20 30 50
500
300
200
100
70
50
30
20
10
IM
3
IM
2
V
CE
= 10 V
V
O
= 100 dB
V/50
R
G
= R
L
= 50
IM
2
f = 90 + 100 MHz
IM
3
f = 2
X
200-190 MHz
20 30 40 50 60 70
-80
-70
-60
-50
-40
-30
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
20
40
60
80
0
2
4
8
10
12
6
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
06/10/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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