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confirm that this is the latest version.
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THYRISTORS
8P2SMA,8P4SMA
8 A MOLD ISOLATED SCR
DATA SHEET
Document No. D17164EJ3V0DS00 (3rd edition)
(Previous No. SC-2102)
Date Published June 2004 NS CP(K)
Printed in Japan
1988
The mark shows major revised points.
DESCRIPTION
The 8P2SMA and 8P4SMA are P gate all diffused mold type
thyristor granted 8 A on-state average current (T
C
= 88C), with
rated voltages up to 400 V.
FEATURES
Mold isolated plastic package
100 A surge current
High voltage: V
DRM
, V
RRM
= 200 V (8P2SMA)
V
DRM
, V
RRM
= 400 V (8P4SMA)
APPLICATIONS
Motor speed control for household appliance
Temperature control for heater and constant temperature box
Constant voltage power source and battery charger
Automotive application such as regulator
Various solid state relay, etc.
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 0.2
3.2 0.2
3.0 MAX.
1.3 0.2
0.8 0.1
2.54 TYP.
2.54 TYP.
1.5 0.2
5 0.2
13.5 MIN.
12 0.2
5
0.1
17 0.2
2.8 0.2
4.7 MAX.
2.5 0.1
0.5 0.1
1
2 3
SCR
1: Cathode
2: Anode
3: Gate
Standard weight: 2 g
*
*
: T
C
test bench-mark
Data Sheet D17164EJ3V0DS
2
8P2SMA,8P4SMA
MAXIMUM RATINGS
Parameter Symbol
8P2SMA 8P4SMA
Unit
Remarks
Non-repetitive Peak Reverse Voltage
V
RSM
300
500 V
-
Non-repetitive Peak Off-state Voltage
V
DSM
300
500 V
-
Repetitive Peak Reverse Voltage
V
RRM
200
400 V
-
Repetitive Peak Off-state Voltage
V
DRM
200
400 V
-
Average On-state Current
I
T(AV)
8
(T
C
= 88C, single phase half wave,
= 180)
A
Refer to Figure 11
Effective On-state Current
I
T(RMS)
12.6 A
and
12.
Surge On-state Current
I
TSM
100 (f = 50 Hz, sine half wave, 1 cycle)
A
Refer to Figure 2.
110 (f = 60 Hz, sine half wave, 1 cycle)
Fusing Current
i
T
2
dt
45 (1 ms
t 10 ms)
A
2
s
-
Critical Rate Rise of On-state Current
dI
T
/dt 50 A/
s
-
Peak Gate Power Dissipation
P
GM
5
(f
50 Hz, Duty 10%) W
Refer
to
Figure 3.
Average Gate Power Dissipation
P
G(AV)
0.5 W
Peak Gate Forward Current
I
FGM
2
(f
50 Hz, Duty 10%) A
-
Peak Gate Reverse Voltage
V
RGM
10 V
-
Junction Temperature
T
j
-40+125
C
-
Storage Temperature
T
stg
-55+150
C
-
ELECTRICAL CHARACTERISTICS (T
j
= 25
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Remarks
Repetitive Peak Reverse Current
I
RRM
V
RM
= V
RRM
T
j
= 25C
-
-
100
A
-
T
j
= 125C
-
-
2 mA
-
Repetitive Peak Off-state Current
I
DRM
V
DM
= V
DRM
T
j
= 25C
-
-
100
A
-
T
j
= 125C
-
-
2 mA
-
On-state Voltage
V
TM
I
TM
= 25 A
-
-
1.4 V
Refer
to
Figure 1.
Gate Trigger Current
I
GT
V
DM
= 6 V, R
L
= 100
-
-
10 mA
Refer
to
Figure 4.
Gate Trigger Voltage
V
GT
V
DM
= 6 V, R
L
= 100
-
-
1.5 V
Gate Non-trigger Voltage
V
GD
T
j
= 125C, V
DM
=
2
1
V
DRM
0.2
-
-
V
-
Holding Current
I
H
V
DM
= 24 V, I
TM
= 25 A
-
6
-
mA
-
Critical Rate Rise of Off-state Voltage
dv/dt
T
j
= 125C, V
DM
=
3
2
V
DRM
-
40
-
V
/
s
-
Circuit Commuted Turn-off Time
t
q
T
j
= 125C, I
TM
= 8 A
di
R
/dt = 15 A/
s, V
R
25
V,
V
DM
=
3
2
V
DRM
,
dV
D
/dt = 10 V/
s
-
100
-
s
-
Thermal Resistance
Note
R
th(j-c)
Junction to case DC
-
-
3.7 C/W
Refer
to
Figure 13.
R
th(j-a)
Junction to ambient DC
-
-
60 C/W
Data Sheet D17164EJ3V0DS
3
8P2SMA,8P4SMA
TYPICAL CHARACTERISTICS
Figure 1. i
T
vs.
T
CHARACTERISTIC
Figure 2. I
TSM
RATING
i
T
- On-state
Current - A
100
10
1
0
2
1
3
MAX.
25C
T
j
= 125C
I
TS
M
- S
u
rge
On
-state Current - A
140
120
100
80
60
40
20
0
1
10
5
50
100
I
TSM
20 ms
10 ms
60 Hz
50 Hz
Initial T
j
= 125C
T
- On-state Voltage - V
N - Cycles
Figure 3. GATE RATING
Figure 4. GATE CHARACTERISTIC
V
FG
- Gate
For
w
a
r
d Voltage - V
10
8
6
4
2
0
0
2.0
1.0
P
G(AV)
= 0.5 W
T
j
=
-40 to
+125C
P
GM
= 5 W
f
50 Hz
Duty
10%
V
GT
- Gate
Trigg
e
r Voltage - V
5
4
3
2
1
0
0
30
20
10
5
25
15
V
DM
= 6 V
R
L
= 100
T
j
=
-40C
0C
25C
I
FG
- Gate Forward Current - A
I
GT
- Gate Trigger Current - mA
Figure 5. I
GT
vs. T
A
CHARACTERISTIC
Figure 6. V
GT
vs. T
A
CHARACTERISTIC
I
GT
- Gate
Tri
gge
r
Curre
nt - mA
100
10
1
0.1
-40
-20
100
80
60
40
20
0
V
GT
- Gate
Trigg
e
r Voltage - V
2.0
1.0
0
-40
-20
100
80
60
40
20
0
T
A
- Ambient Temperature - C
T
A
- Ambient Temperature - C
Data Sheet D17164EJ3V0DS
4
8P2SMA,8P4SMA
Figure 7. i
GT
vs.
CHARACTERISTIC
Figure 8.
GT
vs.
CHARACTERISTIC
i
GT
- Gate T
r
igger
Curre
nt - mA
1000
100
10
1
0.1
1
1000
100
10
T
A
= 25C
GT
- Gate T
r
igge
r Voltage - V
1.0
0.8
0.6
0.4
0.2
0
1
1000
100
10
T
A
= 25C
- Pulse Width -
s
- Pulse Width -
s
Figure 9. I
H
vs. T
A
CHARACTERISTIC
Figure 10. P
T(AV)
vs. I
T(AV)
CHARACTERISTIC
I
H
- Holding Cu
rr
ent - mA
20
10
0
-40
-20
100
80
60
40
20
0
14
12
10
8
6
4
2
0
0
14
12
10
8
6
4
2
0
60
30
120
90
DC
= 180
Conduction angle
T
A
- Ambient Temperature - C
P
T
(
AV)
-
On-state
Average Power
Dissipation - W
I
T(AV)
- Average On-state Current - A
Figure 11. T
C
vs. I
T(AV)
RATING
Figure 12. T
A
vs. I
T(AV)
RATING
T
C
- C
a
se Tempe
r
ature
- C
140
120
100
80
60
40
20
0
0
14
12
10
8
6
4
2
0
30
60
90
120
DC
= 180
Conduction angle
T
A
- Ambient Te
mperatur
e -
C
140
120
100
80
60
40
20
0
0
2.0
1.0
30
DC
= 60
90
120
180
I
T(AV)
- Average On-state Current - A
I
T(AV)
- Average On-state Current - A
Data Sheet D17164EJ3V0DS
5
8P2SMA,8P4SMA
Figure 13. Z
th
CHARACTERISTIC
Z
th
-
Tra
n
sient Th
ermal Impedanc
e -
C/W
100
10
1
0.1
0.01
10000
1000
100
10
1
0.1
Junction to ambient
Junction to case
t - Time - s
8P2SMA,8P4SMA
The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
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