1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
3SK135A
FEATURES
Suitable for use as RF amplifier in UHF TV tuner.
Low C
rss
: 0.02 pF TYP.
High G
ps
: 18 dB TYP.
Low NF
: 2.7 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSX
20
V
Gate1 to Source Voltage
V
G1S
*
10
V
Gate2 to Source Voltage
V
G2S
*
10
V
Drain Current
I
D
25
mA
Total Power Dissipation
P
T
200
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
65 to +150
C
*R
L
10 k
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
20
V
V
G1S
= V
G2S
= 2 V, I
D
= 10
A
Drain Current
I
DSS
0.01
6
mA
V
DS
= 5 V, V
G2S
= 4 V, V
G1S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(off)
2.0
V
V
DS
= 10 V, V
G2S
= 4 V, I
D
= 10
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
0.7
V
V
DS
= 10 V, V
G1S
= 4 V, I
D
= 10
A
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= 0, V
G1S
=
8 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= 0, V
G2S
=
8 V, V
G1S
= 0
Forward Transter Admittance
| y
fs
|
14
18
ms
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA,
f = 1 kHz
Input Capacitance
C
iss
1.5
2.5
pF
V
DS
= 10 V, V
G2S
= 4 V,
Output capacitance
C
oss
0.5
1.0
1.5
pF
I
D
= 10 mA, f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.02
0.03
pF
Power Gain
G
ps
*
16
18
dB
V
DS
= 10 V, V
G2S
= 4 V, I
D
= 10 mA,
Noise Figure
NF*
2.7
4.5
dB
f = 900 MHz
I
DSS
Classification
Class
L/LS*
K/KS*
Marking
U65
U66
I
DSS
0.01 to 2
1 to 6
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
PACKAGE DIMENSIONS
in millimeters
* Old specification/New specification
2.8
0.3
+0.2
1.5
0.1
+0.2
0.4
0.05
+0.1
2.90.2
(1.9)
0.95
0.95
2
1
3
4
0.4
0.05
+0.1
(1.9)
0.16
0.06
+0.1
0.4
0.05
+0.1
1.1
0.1
+0.2
0.6
0.05
+0.1
0.8
0 to 0.1
5
5
5
5
1. Source
2. Drain
3. Gate 2
4. Gate 1
3SK135A
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
25
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
6 V
V
DS
Drain to Source Voltage V
| y
fs
| Forward Transter Admittance mS
V
G2S
= 4 V
0
+1.0
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
V
DS
= 10 V
f = 1 MHz
V
G1S
Gate1 to Source Voltage V
1.0
10
20
5
4
3
2
1
I
D
Drain Current mA
V
G1S
= 0
0.1 V
0.2 V
0.3 V
0.4 V
15
5
4 V
2 V
1 V
V
G2S
= 0
2
1
0
C
oss
Output Capacitance pF
1.0
4.0
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
V
DS
= 10 V
f = 1 MHz
V
G2S
Gate2 to Source Voltage V
1.0
0
2.0
3.0
I
D
= 5 mA at V
G2S
= 4 V
25
20
10
0
6 V
|
D
Drain Current mA
0
+1.0
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
V
DS
= 10 V
V
G1S
Gate1 to Source Voltage V
1.0
15
5
4 V
2 V
1 V
V
G2S
= 0
4
2
0
C
iss
Input Capacitance pF
1.0
4.0
INPUT CAPACITANCE vs.
DRAIN CURRENT
V
DS
= 10 V
f = 1 MHz
I
D
Drain Current mA
1.0
0
2.0
3.0
I
D
= 5 mA at V
G2S
= 4 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
Ambient Temperature C
50
125
400
200
0
P
T
Total Power Dissipation mW
300
100
100
75
25
I
D
= 10 mA at V
G2S
= 4 V
I
D
= 10 mA at V
G2S
= 4 V
3
1
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