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Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
c
2002
The mark shows major revised points.
The 2SD2165 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
1,300 TYP. (V
CE
= 5.0 V, I
C
= 1.0 A)
V
CE(SAT)
0.3 V TYP. (I
C
= 3.0 A, I
B
= 30 mA)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100 V
Collector to emitter voltage
V
CEO
100 V
Emitter to base voltage
V
EBO
7.0 V
Collector current (DC)
I
C(DC)
6.0 A
Collector current (pulse)
I
C(pulse)
10
Note
A
Base current (DC)
I
B(DC)
1.0 A
Total power dissipation (T
C
= 25
C) P
T
30
W
Total power dissipation (T
A
= 25
C) P
T
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note PW
300
s, duty cycle
10%
PACKAGE DRAWING (UNIT: mm)
10.0 0.3
3.2 0.2
2.7 0.2
1.3 0.2
0.7 0.1
2.54 TYP.
2.54 TYP.
1.5 0.2
1 2 3
4 0.2
13.5 MIN.
12.0 0.2
15.0 0.3
3 0.1
4.5 0.2
2.5 0.1
0.65 0.1
Electrode Connection
1. Base
2. Collector
3. Emitter
2SD2165
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
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M8E 02. 11-1
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