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Электронный компонент: 2SB1628

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1998
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-20
V
Collector to emitter voltage
V
CEO
-16
V
Emitter to base voltage
V
EBO
-6.0
V
Collector current (DC)
I
C(DC)
-3.0
A
Collector current (pulse)
I
C(pulse)
PW
10 ms
Duty cycle
50 %
-5.0
A
Base current (DC)
I
B(DC)
-0.2
A
Base current (pulse)
I
B(pulse)
PW
10 ms
Duty cycle
50 %
-0.4
A
Total power dissipation
P
T
16 cm
2
0.7 mm ceramic board used
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrode connection
1: Emitter
2: Collector (fin)
3: Base
Data Sheet D16148EJ1V0DS
2
2SB1628
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CBO
=
-20 V, I
E
= 0
-100
nA
Emitter cutoff current
I
EBO
V
EBO
=
-6.0 V, I
C
= 0
-100
nA
DC current gain
h
FE1
V
CE
=
-2.0 V, I
C
=
-0.5 A
140
280
560
-
DC current gain
h
FE2
V
CE
=
-2.0 V, I
C
=
-3.0 A
70
-
DC base voltage
V
BE
V
CE
=
-2.0 V, I
C
=
-0.05 A
-600
-660
-700
mV
Collector saturation voltage
V
CE(sat)1
I
C
=
-2.0 A, I
B
=
-0.1 A
-240
-350
mV
Collector saturation voltage
V
CE(sat)2
I
C
=
-3.0 A, I
B
=
-0.15 A
-350
-550
mV
Base saturation voltage
V
BE(sat)
I
C
=
-2.0 A, I
B
=
-0.1 A
-0.95
-1.2
V
Gain bandwidth product
f
T
V
CE
= 3.0 V, I
E
= 0.5 A
320
MHz
Output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
45
pF
Turn-on time
t
on
70
ns
Storage time
t
stg
110
ns
Fall time
t
f
I
C
=
-1.0 A, V
CC
=
-10 V
I
B1
=
-I
B2
=
-0.1 A
R
L
= 10
40
ns
h
FE
CLASSIFICATION
Marking
ZX
ZY
ZZ
h
FE1
140 to 280
200 to 400
280 to 560
Data Sheet D16148EJ1V0DS
3
2SB1628
TYPICAL CHARACTERISTICS (Ta = 25



C)
Data Sheet D16148EJ1V0DS
4
2SB1628
Data Sheet D16148EJ1V0DS
5
2SB1628
[MEMO]
2SB1628
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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