Document No. D16122EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1650 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
V
CE(sat)
-0.3 V (MAX.) @I
C
=
-3 A
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor Devices"
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
<1> Base
<2> Collector
<3> Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-150
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current
I
D(DC)
-5.0
A
Collector current
I
C(pulse)
PW
300
s, duty cycle 10%
-10
A
Base current
I
B(DC)
-2.5
A
Total power dissipation
P
T
Tc = 25
C
25
W
Total power dissipation
P
T
Ta = 25
C
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Data Sheet D16122EJ1V0DS
2
2SA1650
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-10
A
Emitter cutoff current
I
EBO
V
EB
=
-5 V, I
C
= 0
-10
A
DC current gain
h
FE1
*
V
CE
=
-2 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE2
*
V
CE
=
-2 V, I
C
=
-1 A
100
400
-
DC current gain
h
FE3
*
V
CE
=
-2 V, I
C
=
-3 A
60
-
Collector saturation voltage
V
CE(sat)1
*
I
C
=
-3 A, I
B
=
-0.15 A
-0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
-4 A, I
B
=
-0.2 A
-0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
-3 A, I
B
=
-0.15 A
-1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
-4 A, I
B
=
-0.2 A
-1.5
V
Gain bandwidth product
f
T
V
CE
=
-10 V, I
C
=
-0.5 A
150
MHz
Collector capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1 MHz
130
pF
Turn-on time
t
on
0.3
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-3 A, I
B1
=
-I
B2
=
-0.15 A,
R
L
= 10
, V
CC
=
-50 V
Refer to the test circuit.
0.4
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D16122EJ1V0DS
3
2SA1650
TYPICAL CHARACTERISTICS (Ta = 25
C)
T
o
t
a
l
P
o
w
e
r Di
ss
i
pat
i
o
n
P
T
(
W
)
Case Temperature T
C
(
C)
I
C
Derat
i
ng
dT
(%
)
Case Temperature T
C
(
C)
Trans
i
ent
Ther
m
a
l
Res
i
s
t
an
c
e
r
th
(
j
-
c)
(t
)
(
C/W
)
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(A
)
Col
l
e
c
t
or Current
I
C
(A
)
Single pulse
Single pulse
Collector Current I
C
(A)
DC Current
Gai
n
h
FE
Pulse test
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