NT512D64S8HB0G NT512D64S8HB0GY
512MB : 64M x 64
PC2100 Unbuffered DDR DIMM

184-pin Unbuffered DDR DIMM

Based on DDR266 32Mx8 SDRAM

Features

· 64Mx64 Unbuffered DDR DIMM based on 32Mx8 DDR SDRAM
·

JEDEC Standard 184-pin Dual In-Line Memory Module

· Performance:

PC2100

Speed Sort

-75B

DIMM

CAS

Latency

2.5

Unit

Clock Frequency

133 MHz

Clock Cycle

7.5

DQ Burst Frequency

266

MHz

· Intended for 133 MHz applications

· Inputs and outputs are SSTL-2 compatible
· V

= 2.5Volt ±

0.2, V

DDQ

= 2.5Volt ± 0.2

· SDRAMs have 4 internal banks for concurrent operation
· Differential clock inputs
· Data is read or written on both clock edges
· DRAM DLL aligns DQ and DQS transitions with clock transitions

· Address and control signals are fully synchronous to positive

clock edge

· Programmable Operation:

- DIMM

CAS

Latency: 2, 2.5

- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write

· Auto Refresh (CBR) and Self Refresh Modes
· Automatic and controlled precharge commands
· 13/10/2 Addressing (row/column/bank)
· 7.8

s Max. Average Periodic Refresh Interval

· Serial Presence Detect
· Gold contacts
· SDRAMs in 66-pin TSOP Type II Package
· Lead-free and Halogen-free product available

escription

NT512D64S8HB0G and NT512D64S8HB0GY are unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line

Memory Modules (DIMM), organized as a two-bank 64Mx64 high-speed memory array. The module uses sixteen 32Mx8 DDR SDRAMs

in 400 mil TSOP II packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs.

The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR SDRAM DIMMs provide a

high-performance, flexible 8-byte interface in a 5.25" long space-saving footprint.

The DIMM is intended for use in applications operating up to 133 MHz clock speeds and achieves high-speed data transfer rates of up to

266 MHz. Prior to any access operation, the device

CAS

latency and burst type/ length/operation type must be programmed into the

DIMM by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of

serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

rdering Information

Part Number

Speed Organization

Leads

Power

133MHz (7.5ns @ CL = 2.5)

NT512D64S8HB0G-75B

100MHz (10ns @ CL = 2)

DDR266B

PC2100 64Mx64 Gold 2.5V

133MHz (7.5ns @ CL = 2.5)

NT512D64S8HB0GY-75B*

100MHz (10ns @ CL = 2)

DDR266B

PC2100 64Mx64 Gold 2.5V

* Lead-free and Halogen-free product

REV 1.1

06/2003

© NANYA TECHNOLOGY CORP.

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT512D64S8HB0G NT512D64S8HB0GY
512MB : 64M x 64
PC2100 Unbuffered DDR DIMM

Pin Description

CK0, CK1, CK2,

CK0

CK1

CK2

Differential Clock Inputs

DQ0-DQ63

Data input/output

CKE0, CKE1 Clock Enable

DQS0-DQS7

Bi-directional data strobes

RAS

Row Address Strobe

DM0-DM7

Input Data Mask

CAS

Column Address Strobe

VDD

Power (2.5V)

Write Enable

DDQ

Supply voltage for DQs (2.5V)

Chip

Selects

Ground

A0-A9, A11, A12 Address Inputs

No Connect

A10/AP Address

Input/Autoprecharge

SCL

Serial Presence Detect Clock Input

BA0, BA1

SDRAM Bank Address Inputs

SDA

Serial Presence Detect Data input/output

REF

Ref. Voltage for SSTL_2 inputs

SA0-2

Serial Presence Detect Address Inputs

DDID

Identification flag

(Not used when V

DDQ)

DDSPD

Serial EEPROM positive power supply (2.5V)

inout

Pin Front Pin Back Pin Front Pin

Back Pin

Front Pin Back

1 V

REF

93 V

32 A5 124

62 V

DDQ

154

RAS

2 DQ0 94 DQ4 33 DQ24

125

A6 63

155 DQ45

3 V

95 DQ5 34 V

126

DQ28 64 DQ41 156 V

DDQ

4 DQ1 96 V

DDQ

35 DQ25 127

DQ29 65

CAS

157

5 DQS0 97 DM0 36 DQS3

128

DDQ

66 V

158

6 DQ2 98 DQ6 37 A4 129

DM3 67

DQS5

159

DM5

7 V

99 DQ7 38 V

130

A3 68 DQ42 160 V

8 DQ3

100 V

39 DQ26 131

DQ30 69 DQ43 161 DQ46

9 NC

101 NC 40

DQ27

132

70 V

162 DQ47

10 NC 102 NC 41 A2 133

DQ31

71 NC 163 NC

11 V

103 NC 42 V

134

NC 72 DQ48 164 V

DDQ

12 DQ8 104 V

DDQ

43 A1 135

NC 73 DQ49 165 DQ52

13 DQ9 105 DQ12 44 NC 136

DDQ

74 V

166 DQ53

14 DQS1 106 DQ13 45 NC 137

CK0 75

CK2

167 NC

15 V

DDQ

107 DM1 46 V

138

CK0

76 CK2 168 V

16 CK1 108 V

47 NC 139

77 V

DDQ

169 DM6

CK1

109 DQ14 48 A0 140

NC 78 DQS6 170 DQ54

18 V

110 DQ15 49 NC 141

A10 79 DQ50 171 DQ55

19 DQ10 111 CKE1 50 V

142

NC 80 DQ51 172 V

DDQ

20 DQ11 112 V

DDQ

51 NC 143

DDQ

81 V

173 NC

21 CKE0 113 NC 52 BA1 144

NC 82 V

DDID

174 DQ60

22 V

DDQ

114 DQ20

KEY

83 DQ56 175 DQ61

23 DQ16 115 A12 53 DQ32 145

84 DQ57

176 V

24 DQ17 116 V

54 V

DDQ

146

DQ36 85 V

177 DM7

25 DQS2 117 DQ21 55 DQ33 147

DQ37 86 DQS7 178 DQ62

26 V

118 A11 56 DQS4 148

87 DQ58

179

DQ63

27 A9 119 DM2 57 DQ34 149

DM4 88 DQ59 180 V

DDQ

28 DQ18 120 V

58 V

150

DQ38 89 V

181 SA0

29 A7 121 DQ22 59 BA0 151

DQ39 90 WP 182 SA1

30 V

DDQ

122 A8 60 DQ35 152

91 SDA 183 SA2

31 DQ19 123 DQ23 61 DQ40 153

DQ44 92 SCL 184

DDSPD

Note: All pin assignments are consistent for all 8-byte unbuffered versions.

REV 1.1

06/2003

© NANYA TECHNOLOGY CORP.

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT512D64S8HB0G NT512D64S8HB0GY
512MB : 64M x 64
PC2100 Unbuffered DDR DIMM

nput/Output Functional Description

Symbol

Type

Polarity

Function

CK0, CK1, CK2

(SSTL)

Positive

Edge

The positive line of the differential pair of system clock inputs. All the DDR SDRAM
address and control inputs are sampled on the rising edge of their associated clocks.

CK0

CK1

CK2

(SSTL)

Negative

Edge

The negative line of the differential pair of system clock inputs.

CKE0, CKE1

(SSTL)

Active

High

Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self-Refresh
mode.

(SSTL)

Active

Low

Enables the associated SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored
but previous operations continue.

RAS

CAS

(SSTL)

Active

Low

When sampled at the positive rising edge of the clock,

RAS

CAS

define the operation

to be executed by the SDRAM.

REF

Supply

Reference voltage for SSTL-2 inputs

DDQ

Supply

Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity

BA0, BA1

(SSTL) - Selects which SDRAM bank is to be active.

A0 - A9
A10/AP

A11, A12

(SSTL) -

During a Bank Activate command cycle, A0-A12 defines the row address (RA0-RA12)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A8 defines the column address (CA0-CA8)
when sampled at the rising clock edge. In addition to the column address, AP is used to
invoke Auto-precharge operation at the end of the Burst Read or Write cycle. If AP is high,
auto-precharge is selected and BA0/BA1 define the bank to be precharged. If AP is low,
auto-precharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to
pre-charge.

DQ0 - DQ63

(SSTL) -

Data and Check Bit input/output pins operate in the same manner as on conventional
DRAMs.

DQS0 - DQS7

(SSTL)

Active

High

Data strobes: Output with read data, input with write data. Edge aligned with read data,
centered on write data. Used to capture write data.

DM0 - DM7

Input

Active

High

The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation if it
is high. In Read mode, DM lines have no effect. DM8 is associated with check bits
CB0-CB7, and is not used on x64 modules.

DD,

Supply

Power and ground for the DDR SDRAM input buffers and core logic

SA0 - SA2

Address inputs. Connected to either V

or V

on the system board to configure the

Serial Presence Detect EEPROM address.

SDA

This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V

to act as a pullup.

SCL

This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V

to act as a pullup.

DDSPD

Supply

Serial EEPROM positive power supply.

REV 1.1

06/2003

© NANYA TECHNOLOGY CORP.

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT512D64S8HB0G NT512D64S8HB0GY
512MB : 64M x 64
PC2100 Unbuffered DDR DIMM

Functional Block Diagram

(2 Bank, 32Mx8 DDR SDRAMs)

Serial PD

SCL

SDA

SA0

SA2

SA1

A0-A13

RAS

BA0-BA1

BA0-BA1 : SDRAMs D0-D15

A0-A13 : SDRAMs D0-D15

RAS

: SDRAMs D0-D15

CKE0

CAS

: SDRAMs D0-D15

CKE : SDRAMs D0-D7

CKE : SDRAMs D8-D15

: SDRAMs D0-D15

CKE1

DDSPD

REF

DDID

DDQ

Strap: see Note 4

SPD
D0-D15
D0-D15
D0-D15

* Wire per Clock Loading Table/

Wiring Diagrams

* Clock Wiring

Clock Input

SDRAMs

*CK0/

CK0

*CK1/

CK1

*CK2/

CK2

4 SDRAMs
6 SDRAMs
6 SDRAMs

Notes :

1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DM/CKE/S relationships must be maintained as shown.
3. DQ, DQS, DM/DQS resistors: 22 Ohms.
4. V

DDID

strap connections (for memory device V

, V

DDQ

STRAP OUT (OPEN): V

= V

DDQ

STRAP IN (V

): V

is not equal to V

DDQ

DM0/DQS9

DQ0
DQ1
DQ2

DQ7

DQ4

DQ6

DQ5

DQ3

DQ8
DQ9

DQ10

DQ15

DQ12

DQ14

DQ13

DQ11

DQ16
DQ17
DQ18

DQ23

DQ20

DQ22

DQ21

DQ19

DQ24
DQ25
DQ26

DQ31

DQ28

DQ30

DQ29

DQ27

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

DQS0

DM4/DQS13

DQS4

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

DM1/DQS10

DQS1

DQS

DM2/DQS11

DQS2

DM3/DQS12

DQS3

DQS

DQ32
DQ33
DQ34

DQ39

DQ36

DQ38

DQ37

DQ35

DQ40
DQ41
DQ42

DQ47

DQ44

DQ46

DQ45

DQ43

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

DQS

DQS5

DM5/DQS14

DQ48
DQ49
DQ50

DQ55

DQ52

DQ54

DQ53

DQ51

DQ56
DQ57
DQ58

DQ63

DQ60

DQ62

DQ61

DQ59

DQS6

DM6/DQS15

DQS7

DM7/DQS16

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D10

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D11

DQS

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

DQS

I/O 7
I/O 6

I/O 3

I/O 4

I/O 5

I/O 0

I/O 1

I/O 2

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D12

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D13

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D14

DQS

I/O 0
I/O 1

I/O 4

I/O 3

I/O 2

I/O 7

I/O 6

I/O 5

D15

DQS

REV 1.1

06/2003

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

NT512D64S8HB0G NT512D64S8HB0GY
512MB : 64M x 64
PC2100 Unbuffered DDR DIMM

Serial Presence Detect --

Part 1 of 2

64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 2.5V DDR SDRAMs with SPD

SPD Entry Value

Serial PD Data Entry

(Hexadecimal)

Note

Byte

Description

DDR266B

-75B

DDR266B

-75B

Number of Serial PD Bytes Written during Production

128

Total Number of Bytes in Serial PD device

256

Fundamental Memory Type

SDRAM DDR

Number of Row Addresses on Assembly

Number of Column Addresses on Assembly

Number of DIMM Bank

Data Width of Assembly

X64

Data Width of Assembly (cont')

X64

Voltage Interface Level of this Assembly

SSTL 2.5V

DDR SDRAM Device Cycle Time at CL=2.5

7.5ns

DDR SDRAM Device Access Time from Clock at CL=2.5

0.75ns

11 DIMM

Configuration

Type

Non-Parity

12 Refresh

Rate/Type

SR/1x(7.8us)

Primary DDR SDRAM Width

Error Checking DDR SDRAM Device Width

N/A

DDR SDRAM Device Attr: Min CLK Delay, Random Col
Access

1 Clock

DDR SDRAM Device Attributes: Burst Length Supported

2,4,8

DDR SDRAM Device Attributes: Number of Device Banks

DDR SDRAM Device Attributes: CAS Latencies Supported

2/2.5

DDR SDRAM Device Attributes: CS Latency

DDR SDRAM Device Attributes: WE Latency

21 DDR

SDRAM

Device

Attributes: Differential

Clock

DDR SDRAM Device Attributes: General

+/-0.2V Voltage Tolerance

Minimum Clock Cycle at CL=2

10ns

Maximum Data Access Time from Clock at CL=2

0.75ns

Minimum Clock Cycle Time at CL=1

N/A

Maximum Data Access Time from Clock at CL=1

N/A

Minimum Row Precharge Time (t

) 20ns

Minimum Row Active to Row Active delay (t

RRD

) 15ns

Minimum RAS to CAS delay (t

RCD

) 20ns

Minimum RAS Pulse Width (t

RAS

) 45ns

Module Bank Density

256MB

Address and Command Setup Time Before Clock

0.9ns

Address and Command Hold Time After Clock

0.9ns

Data Input Setup Time Before Clock

0.5ns

Data Input Hold Time After Clock

0.5ns

36-61 Reserved

Undefined

62 SPD

Revision

Initial

63 Checksum

Data

REV 1.1

06/2003

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NT512D64S8HB0G-75B

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NT512D64S8HB0G-75B