1
Pin Compatible with MPM3002 and MPM3010
P and N Channel MOSFETs for Ease of Drive
N Channel Current Sensing MOSFET for Low Loss Sensing
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
55 Volt, 10 Amp Full H-Bridge
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
3002
H-BRIDGE
MOSFET POWER MODULE
EQUIVALENT SCHEMATIC
DESCRIPTION:
The MSK 3002 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3002 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The N Channel MOSFETS are current sensing to allow for low loss current sensing for current controlled
applications. The MSK 3002 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3002 is pin
compatible with the MPM3002 and MPM3010 with some differences in specifications.
FEATURES:
Rev. C 7/00
TYPICAL APPLICATIONS
Stepper Motor Servo Control
Disk Drive Head Control
ISO 9001 CERTIFIED BY DSCC
M.S. KENNEDY CORP.
X-Y Table Control
Az-El Antenna Control
N-CHANNEL (Q2, Q3)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
I
D
= 17A
V
DS
= 48V
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but
are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 T
A
= 25C unless otherwise specified.
NOTES:
V
DSS
Drain to Source Voltage 55V MAX
V
DGDR
Drain to Gate Voltage
(RGS = 1 M
) 55V MAX
V
GS
Gate to Source Voltage
(Continuous) 20V MAX
I
D
Continuous Current 10A MAX
I
DM
Pulsed Current 25A MAX
R
TH-JC
Thermal Resistance
(Junction to Case) 7.9C/W
I
M
Sense Current - Continuou 13 mA MAX
I
MM
Sense Current Peak 33 mA MAX
2
Rev. C 7/00
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Single Pulse Avalanche Energy
(Q1,Q4) 6.0J
(Q2,Q3) 71 mJ
T
J
JunctionTemperature +175CMAX
T
ST
Storage Temperature -55C to +150C
T
C
Case Operating Temperature Range -55C to +125C
T
LD
Lead Temperature Range
(10Seconds) 300C MAX
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
2
Drain-Source on Resistance
3
Forward Transconductance
1
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
I
S
= 17A V
GS
= 0V (Q2, Q3)
I
S
= -7.2A V
GS
= 0V (Q1, Q4)
I
S
= 17A di/dt = 100A/S (Q2, Q3)
I
S
= -7.2A di/dt = 100A/S (Q1, Q4)
I
S
= 17A di/dt = 100A/S (Q2, Q3)
I
S
= -7.2A di/dt = 100A/S (Q1, Q4)
V
GS
= 0V
V
DS
= -25V
f = 1 MHz
V
DD
= -28V
I
D
= -7.2A
R
G
= 24
R
D
= 3.7
I
D
= -7.2A
V
DS
= -44V
V
GS
= -10V
I
D
= 17A
V
GS
= 0 I
D
= 0.25 mA (All Transistors)
V
GS
= 0 V
DS
= 55V, (Q2, Q3)
V
DS
= 55V V
GS
= 0V, (Q2, Q3)
V
DS
= -55V V
GS
= 0V, (Q1, Q4)
V
GS
= 20V V
DS
= 0V (All Transistors)
V
DS
= V
GS
I
D
= 250 A (Q2, Q3)
V
DS
= V
GS
I
D
= 250 A (Q1, Q4)
V
GS
= 10V I
D
= 10A (Q2, Q3)
V
GS
= -10V I
D
= -7.2A (Q1, Q4)
V
GS
= 10V I
D
= 10A (Q2, Q3)
V
GS
= -10V I
D
= -7.2A (Q1, Q4)
V
DS
= 25V I
D
= 10A (Q2, Q3)
V
DS
= -25V I
D
= -7.2A (Q1, Q4)
55
55
-
-
-
2.0
-2.0
-
-
-
-
5.8
2.5
-
-
-
-
-
-
-
-
-
-
-
740
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
59
25
38
720
360
75
14
-
-
-
25
-25
100
4.5
-4.5
0.20
0.28
0.10
0.175
-
-
24
6.3
9
-
-
-
-
-
-
-
-
820
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-1.6
87
47
0.29
0.084
-
-
180
71
0.60
0.13
V
V
nS
nS
C
C
-
-
-
13
55
23
37
350
170
92
19
5.1
10
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
A
A
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
Units
Typ.
Max.
Min.
MSK 3002
V
DD
= 30V
I
D
= 17A
R
G
= 18
R
D
= 1.7
Drain-Source Leakage Current
N-CHANNEL GATES (Q2, Q3):
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors
are on. This will keep the dissipation down to a minimum level. How quickly the gate gets turned ON and OFF will
determine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and
OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in
the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive
IC's have sufficient gate drive capability for the MSK 3002. If not, paralleled CMOS standard gates will usually be
sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray iductances
in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See
Figure 1 for circuit details.
P-CHANNEL GATES (Q1, Q4):
Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel
gate to source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for
directly interfacing with the P-Channel gates. If not, an external common emitter switching transistor configuration (see
Figure 2) will turn the P-Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply
voltages, additional circuitry must be used to protect the P-Channel gate from excessive voltages.
BRIDGE DRIVE CONSIDERATIONS:
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high
side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called
"shoot-through" and it places a momentary short across the power supply. This overly stresses the transistors and causes
excessive noise as well. See Figure 3.
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with
gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are
used for servo systems such as locked antiphase PWM'ing for high bandwidth operation.
FIGURE 2
APPLICATION NOTES
3
Rev. C 7/00
FIGURE 1
FIGURE 3
USING CURRENT SENSING MOSFETS:
A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total
very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total
current. This current can be used as a low power sense of the whole current without passing that whole current through a
sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current.
There are several methods of working with the sense function to obtain the actual current.
1. Virtual Earth Sensing
The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to
slew 50V/Sec. This is beyond the capabilities of a lot of op amps.
2. Resistor Sensing
The disadvantage is R
T
voltage must be above the offset voltage of the op amp and R
T
must be much less than R
DS(ON)
of
the sensing cell or temperature shifts will affect accuracy.
4
Rev. C 7/00
APPLICATION NOTES, CONT.
5
Rev. C 7/00
TYPICAL PERFORMANCE CURVES
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