Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1100
Features
High Dynamic Range Cascadable
50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.5 dBm Typical P
1dB
@ 0.7 Ghz
11 dB Typical Gain @ 0.5 GHz
3.5 dB Typical Noise Figure @ 1.0 GHz
Description
M-Pulse's MP4TD1100 is a high performance silicon
bipolar MMIC chip. The MP4TD1100 is designed for
use in 50
or 75
systems where a high dynamic range
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1100 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
10
12
14
0.1
1
10
FREQUENCY (GHz)
GA
I
N
(
d
B
)
Id=60mA
Chip Outline Drawing1,2,3,4
RF Input
Feedback Capacitor
Ground
Optional RF Output & +5.5 Volts
375
(14.8 mil)
375
(14.8 mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120
m; 4.8 mils
2. Bond Pads are 40
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5
Ordering Information
Model No.
Type of Carrier
MP4TD1100G GEL
PACK
MP4TD1100W Waffle
Pack
Electrical Specifications @ T
A
= +25
C, Id = 60 mA, Z0 = 50
Symbol
Parameters
Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (
S21
2)
f = 0.1 GHz
dB
-
12.5
-
Gp
Gain Flatness
f = 0.1 to 0.7 GHz
dB
-
+ 1.2
-
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
GHz
-
1.0
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
1.9
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.9
-
P
1dB
Output Power @ 1dB Gain Compression
f = 0.7 GHz
dBm
-
17.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
4.5
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
30.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
160
-
V
d
Device
Voltage
-
V 4.5 5.5 6.5
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1100
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
Power Dissipation
2,3
650
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jms
= 60
C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
C.
3. Derate at 16.7 mW/
C for TMS > 161
C
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7.5 V
Vd = 5.5 V
Id =
Vcc - Vd
Rbias
MP4TD1100
Typical Performance Curves @ Id = 60 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
2 0
4 0
6 0
8 0
10 0
12 0
0
2
4
6
8
V d, D EVIC E V O L TAG E (V)
I
d
,
DE
VI
CE
CURRE
NT
(
m
A
)
POWER GAIN vs CURRENT
0
2
4
6
8
1 0
1 2
1 4
2 0
4 0
60
80
10 0
Id, D EV IC E C U R R EN T (m A)
GA
I
N
(
d
B
)
0 .1 G H z
0.5 G H z
1 .0 G H z
2 .0 G H z
RETURN LOSS vs FREQUENCY
-20
-18
-16
-14
-12
-10
-8
-6
0.1
1
1 0
F R E QU E N C Y (G H z)
RE
T
URN L
O
S
S
(
d
B
)
IN P U T
O U T P U T
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
11
13
15
17
19
21
23
0. 1
1
10
F R EQ U EN C Y (G H z)
P
OU
T
- 1
d
B
(dB
m
)
I d= 40 m A
Id= 6 0m A
I d= 7 5m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1100
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3 .5
4
4 .5
5
5 .5
6
0.1
1
1 0
F R EQ U EN C Y (G H z)
NO
I
S
E
F
I
G
URE
(
d
B
)
I d= 40 m A
Id= 6 0m A
I d= 7 5m A
REVERSE ISOLATION vs FREQUENCY
-19
-17
-15
-13
-11
-9
-7
-5
-3
0.1
1
1 0
F R E QU E N C Y (G H z)
RE
VE
RS
E
I
S
O
L
AT
I
O
N (
d
B
)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 60 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.05 0.133
-104.9 4.23 157.5 0.152 14.4 0.120
-98.7
0.1
0.134
-106.7 4.19 156.2 0.154 14.8 0.124
-100.6
0.2
0.140
-112.4 4.05 151.7 0.158 16.2 0.137
-106.6
0.3
0.148
-118.6 3.90 146.8 0.164 17.7 0.153
-113.1
0.4
0.153
-123.0 3.79 143.2 0.168 18.8 0.165
-120.2
0.5
0.162
-129.9 3.62 137.8 0.174 20.5 0.185
-125.1
0.6
0.172
-137.3 3.44 131.2 0.182 22.4 0.208
-132.8
0.7
0.185
-144.4 3.25 124.7 0.190 24.6 0.233
-140.8
0.8
0.198
-148.7 3.12 120.4 0.196 26.3 0.249
-145.3
0.9
0.216
-154.6 2.95 114.4 0.205 28.4 0.271
-151.4
1.0
0.232
-159.8 2.79 108.8 0.214 30.3 0.287
-156.8
1.5
0.279
-179.0 2.23 89.4 0.254 35.8 0.323
-175.4
2.0
0.314
164.8 1.88 74.3 0.294 38.7 0.331
169.7
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