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Электронный компонент: MP4TD0400

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0400

Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 3.2 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0400 is a high performance silicon
bipolar MMIC chip. The MP4TD0400 is designed for
use where a general purpose 50
gain block is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.

The MP4TD0400 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.

TYPICAL POWER GAIN vs FREQUENCY
Fre que nc y (GH z)
G
a
in
(
d
B
)
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
Ga in Fla t t o DC
Id = 5 0 mA
Chip Outline Drawing
1,2,3,4
RF Input
Ground
Optional RF Output & +5.25 Volts
375
(14.8 mil)
375 (14.8
mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120
m; 4.8 mils
2. Bond Pads are 40
m; 1.6 mils typical in diameter
3. RF Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5




Ordering Information
Model No.
Type of Carrier
MP4TD0400 GEL
GEL PACK
MP4TD0400 WAF
Waffle Pack
MP4TD0400 TF
Tape Frame


Electrical Specifications @ T
A
= +25
C, Id = 50 mA; Zo = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
-
9.0
-
Gp
Gain Flatness
f = 0.1 to 2.0 GHz
dB
-
0.6
-
f
3 dB
3 dB Bandwidth
-
GHz
-
3.2
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
1.4
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
1.7
-
P
1 dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
12.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.2
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
25.5
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V
4.75
5.25 5.75
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0400
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
Power Dissipation
2,3
650
mW
RF Input Power
+13 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jms
= 35
C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
C.
3. Derate at 28.6 mW/
C for TMS > 177
C
Typical Bias Configuration
IN
OUT
1
2
MP4TD0400
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7 V
Vd = 5.25 V
Id =
Vcc - Vd
Rbias

Typical Performance Curves @ Id = 50 mA, TA = +25
C (unless otherwise noted)


DEVICE CURRENT vs DEVICE VOLTAGE
Vd, De vice Volta ge (V)
Id
, D
evice C
u
r
r
e
n
t
(
m
A
)
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6


POWER GAIN vs CURRENT
Id, De vice Current (mA)
G
a
in
(
d
B
)
2
3
4
5
6
7
8
9
10
2 0
3 0
4 0
5 0
60
70
8 0
f=.1 GH z
f=1 .0 GH z
f= 2.0 GHz


RETURN LOSS vs FREQUENCY
Freque ncy (GH z)
Re
t
u
r
n
L
o
s
s
(
d
B)
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
10
I nput
Out put

P
OUT
@ -1DB GAIN COMPRESSION vs
FREQUENCY
Freque ncy, GH z
P
out -1
dB
(dB
m
)
0
2
4
6
8
10
12
14
16
18
0.1
1
10
I d= 7 0mA
Id= 50 mA
I d=3 0mA
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0400
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
Freque ncy (GH z)
N
o
i
s
e
Fi
gur
e
(dB
)
5.5
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
7.5
0 .1
1
10
Id=3 0mA
Id=5 0 mA
I d= 7 0mA
REVERSE ISOLATION vs FREQUENCY
Freque ncy (GH z)
R
ever
se Iso
l
at
io
n
(
d
B
)
-2 0
-1 9
-1 8
-1 7
-1 6
-1 5
-1 4
-1 3
-1 2
-1 1
-1 0
0 .1
1
10





Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 50 mA
Frequency S11
S22
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1
0.192 169.4 2.86 174.6 0.148 4.9 0.070 3.8
0.2
0.191 170.2 2.86 171.9 0.147 5.4 0.079 -12.4
0.4
0.188 171.7 2.86 164.9 0.147 7.3 0.102 -47.9
0.6
0.180 170.6 2.85 157.3 0.150 10.4 0.128 -73.9
0.8
0.171 169.6 2.83 149.8 01.54 13.8 0.153 -90.2
1.0
0.165 170.1 2.80 142.4 0.158 17.0 0.177
-102.2
1.5
0.163 176.1 2.71 124.2 0.172 24.0 0.228
-126.3
2.0
0.199
-178.6 2.57 106.6 0.188 28.6 0.258
-146.0
2.5
0.245
179.8 2.37 88.7 0.204 31.4 0.266
-161.5
3.0
0.300
173.3 2.14 75.6 0.216 33.8 0.258
-171.2
3.5
0.355
163.9 1.91 64.4 0.228 35.5 0.253
-177.6
4.0
0.407
153.3 1.73 55.0 0.234 37.2 0.251
178.5
4.5
0.456
142.3 1.58 46.2 0.241 40.3 0.262
176.4
5.0
0.508
131.2 1.44 39.1 0.252 42.8 0.279
173.8