1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The BUT33 Darlington transistor is designed for highvoltage, highspeed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line operated SWITCHMODE applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn Off Times
800 ns Inductive Fall Time at 25
_
C (Typ)
2.0
s Inductive Storage Time at 25
_
C (Typ)
Operating Temperature Range 65 to 200
_
C
MAXIMUM RATINGS
Rating
Symbol
BUT33
Unit
CollectorEmitter Voltage
VCEO(sus)
400
Vdc
CollectorEmitter Voltage
VCEV
600
Vdc
Emitter Base Voltage
VEB
10
Vdc
Collector Current -- Continuous
Collector Current
-- Peak (1)
IC
ICM
56
75
Adc
Base Current -- Continuous
Base Current
-- Peak (1)
IB
IBM
12
15
Adc
Free Wheel Diode Forward Current -- Continuous
Free Wheel Diode Forward Current
-- Peak
IF
IFM
56
75
Adc
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above 25
_
C
PD
250
140
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
_
C/W
Maximum Lead Temperature for Soldering Purpose
1/8
from Case for 5 Seconds
TL
275
_
C
(1) Pulse Test: Pulse Width
=
5 ms, Duty Cycle
x
10%.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT33/D
Motorola, Inc. 1995
BUT33
56 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
600 VOLTS
250 WATTS
CASE 197A05
TO204AE
(TO3)
100
16
REV 7
BUT33
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
VCEO(sus)
400
--
--
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ICEV
--
--
--
--
0.2
4.0
mAdc
Emitter Cutoff Current
(VEB = 20 V, IC = 0)
IEBO
--
--
350
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 16
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 17
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 A, VCE = 5 V)
(IC = 36 A, VCE = 5 V)
hFE
30
20
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 20 A, IB = 1 A)
(IC = 36 A, IB = 3.6 A)
(IC = 44 A, IB = 4.4 A)
(IC = 56 A, IB = 11.2 A)
VCE(sat)
--
--
--
--
--
--
--
--
2.0
2.5
3.0
5.0
Vdc
BaseEmitter Saturation Voltage
(IC = 20 A, IB = 1 A)
(IC = 36 A, IB = 3.6 A)
(IC = 44 A, IB = 4.4 A)
VBE(sat)
--
--
--
--
--
--
2.5
2.9
3.3
Vdc
Diode Forward Voltage
(IF = 44 A)
Vf
--
--
4.0
Vdc
SWITCHING CHARACTERISTICS
Inductive Load Clamped (Table 1)
Storage Time
TC = 25
_
C
IC = 36 A
ts
--
2.0
3.3
s
Fall Time
IB = 3.6 A
tf
--
0.8
1.6
s
Storage Time
See Table 1
TC = 100
_
C
VBE(off) = 5 V
ts
--
2.2
--
s
Fall Time
See Table 1
TC = 100
_
C
VBE(off) = 5 V
tf
--
0.8
--
s
(1) Pulse Test: PW = 300
s, Duty Cycle
x
2%.
BUT33
3
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
3.2
1
IC, COLLECTOR CURRENT (AMPS)
2
3
7
10
50
2.8
2.5
2.2
1.9
2.5
IC, COLLECTOR CURRENT (AMPS)
2.2
1.9
1.6
1.3
1.0
0.7
0.4
TC = 25
C
IC/IB = 10
1.6
1.3
20
IC = 40 A
400
1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
2
3
4
6
10
20
30 40
60
100
30
20
10
Figure 2. Collector Saturation Region
0.1
IB, BASE CURRENT (AMPS)
0
0.2 0.3
0.5
1
4
3
2
1
200
50
h
FE
, DC CURRENT
GAIN
5
3
2
TC = 25
C
VCE = 5.0 V
IC = 20 A
TC = 25
C
2
3
5
7
10
Figure 3. CollectorEmitter Saturation Voltage
30
5
1
2
3
7
10
50
20
30
5
TC = 25
C
IC/IB = 10
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
1.0
Figure 4. BaseEmitter Voltage
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
0.05
1
2
5
10
20
50
100
200
500
R
JC(t) = r(t) R
JC
R
JC(t) = 1.17
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
RESIST
ANCE (NORMALIZED)
1000
Figure 5. Thermal Response
0.03
0.3
3
30
300
BUT33
4
Motorola Bipolar Power Transistor Device Data
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
TEST CIRCUIT
for
FREEWHEEL
DIODE
INPUT
CONDITIONS
CIRCUIT
V
ALUES
TEST CIRCUITS
PW Varied to Attain
IC = 100 mA
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180
H
Rcoil = 0.05
VCC = 10 V
INDUCTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
t1
[
Lcoil (ICM)
VCC
t2
[
Lcoil (ICM)
Vclamp
Test Equipment
Scope -- Tektronix
475 or Equivalent
OUTPUT WAVEFORMS
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
20
1
5 V
0
2
220
100
680 pF
100
PULSES
= 3%
33
2 W
33
2 W
160
D1
22
F
D3
22
680 pF
MM3735
1N4934
D1 D2 D3 D4
2N3763
160
680 pF
22
D4
22
F
D3
2N6438
+10 V
MR854
1
F
2N6339
MR854
Ib1 ADJUST
dTb ADJUST
DRIVER
+
VD
ID
VD
ID
510
AV
up to
50 V
CRONETICS
PG130
up to
50 V
5
s
dT
Ib2 ADJUST
VCC
ICM
VCEM
IC
VCE
t1
tf
t
tf Clamped
t2
TIME
Vclamp
t
1%
Ib2/Ib1
10
f, FORCED GAIN
8
6
5
4
3
2
1
15
1
Figure 6. Fall Time versus IB2/IB1
Ib2/Ib1
0.1
2
3
4
5
6
7
8
9
10
5
2
1
Figure 7. TurnOff Time versus IC
5
1
IC, COLLECTOR CURRENT (AMPS)
0.1
2
3
5
7
10
4
3
2
1
10
3
IC = 50 A
0.5
0.3
0.2
TC = 25
C
IC/IB = 5
20
30
50
Figure 8. Storage Time versus Forced Gain
Figure 9. Storage Time versus Ib2/Ib1
40
C
IC = 25 A
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
IC = 25 A
IC = 50 A
TC = 25
C
VBE(off) = 5 V
t,
TIME (
s)
t,
TIME (
s)
t,
TIME (
s)
t,
TIME (
s)
0.5
0.3
0.2
IC/IB = 10
10 V
TC = 25
C
IC/IB = 20
tF
IC = 20 A
VBE(off) = 5 V
tF = 200 ns
tS = 400 ns
tS
10 V
IC = 25 A
IC = 50 A
10
8
6
5
4
3
2
1
TC = 25
C
IC/IB = 5
VBE(off) = 5 V
IC = 10 A
BUT33
5
Motorola Bipolar Power Transistor Device Data
FREEWHEEL DIODE CHARACTERISTICS
T
FR
, FOR
W
ARD RECOVER
Y
TIME (
s)
T
RR
, REVERSE RECOVER
Y
TIME (
s)
I E
, EMITTER CURRENT
(AMPS)
Figure 10. Free Wheel Diode Measurements
Figure 11. Forward Voltage
0
VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)
0
1
2
3
4
5
10
0
Figure 12. Forward Modulation Voltage
IE, EMITTER CURRENT (AMPS)
10
30
0
Figure 13. Peak Reverse Recovery Current
30
25
15
10
20
5
50
IE, EMITTER CURREMT (AMPS)
20
40
0
30
50
40
10
20
20
50
40
30
0
Figure 14. Forward Recovery Time
IE, EMITTER CURRENT (AMPS)
0.8
10
20
40
50
2.0
1.6
1.4
1.2
Figure 15. Reverse Recovery Time
0
IE, EMITTER CURRENT (AMPS)
0.3
10
20
30
40
50
3
2
2.2
1.8
1.0
30
15
10
7
I RM
, PEAK REVERSE RECOVER
Y
CURRENT
(AMPS)
V
dyn
, FOR
W
ARD MODULA
TION VOL
T
AGE (VOL
TS)
+
0
50
40
20
30
10
5
1
0.7
0.5
40
C
Id
1
0
VD
DYN
10 (VDYN VFM)
VFM
TFR
I
IFM
IRM
trr
t
25 IRM
di/dt = 25 A/
s
TC = 25
C
TC = 25
C
TC = 25
C
TC = 25
C
TC = 25
C
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