MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
LOT No.
0.4+/-0.07
1
2
3
0.4+/-0.07
0.8 MIN
0.5+/-0.07
1.5+/-0.1
0.1 MAX
1.5+/-0.1
2.5+/-0.1
TYPE NAME
1.6+/-0.1
0.1
4.4+/-0.1
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4
1.5+/-0.1
3.9+/-0.3
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
C
UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
RATINGS UNIT
V
DSS
Drain to source voltage
Vgs=0V
30
V
V
GSS
Gate to source voltage
Vds=0V
10
V
Pch Channel
dissipation Tc=25
C
3.1
W
Pin Input
power
Zg=Zl=50
10
mW
ID Drain
current
-
200
mA
Tch Channel
Temperature
-
150
C
Tstg
Storage temperature
-
-40 to +125
C
Rth j-c
Thermal resistance
Junction to case
40
C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
C
, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX.
I
DSS
Zero gate voltage drain current V
DS
=17V, V
GS
=0V -
-
25
uA
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V -
-
1
uA
Vth
Gate threshold Voltage
V
DS
=12V, I
DS
=1mA 1
2
3
V
Pout Output
power
V
DD
=12.5V, Pin=4mW,
0.3
0.7
-
W
D
Drain efficiency
f=30MHz,Idq=50mA
55
65
-
%
Note : Above parameters , ratings , limits and conditions are subject to change.
1/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
1
2
3
4
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(C)
CHANNEL DI
SSI
PATI
O
N
Pch(W)
On PCB(*1)
On PCB(*1) with Heat-sink
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vgs-Ids CHARACTERISTICS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
Vgs(V)
Ids(A
)
Ta=+25C
Vds=10V
Vds-Ids CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
Vds(V)
Ids(A
)
Ta=+25C
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs=10V
Vds VS. Ciss CHARACTERISTICS
0
5
10
15
20
0
5
10
15
20
Vds(V)
Ciss(pF)
Ta=+25C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
5
10
15
20
0
5
10
15
20
Vds(V)
Coss(pF)
Ta=+25C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
1
2
3
4
0
5
10
15
20
Vds(V)
Crss(pF)
Ta=+25C
f=1MHz
2/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
10
15
20
25
30
35
-20 -15 -10
-5
0
5
10
Pin(dBm)
P
o
(d
B
m
) , G
p
(d
B
)
,
I
dd(
A)
0
20
40
60
80
100
d(
%)
Ta=+25C
f=30MHz
Vdd=12.5V
Idq=50mA
Po
Gp
Pin-Po CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
Pin(mW)
Pout(
W
)
,
Idd(
A)
40
50
60
70
80
90
100
d(
%)
Po
d
Idd
Ta=25C
f=30MHz
Vdd=12.5V
Idq=50mA
Vdd-Po CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
12
14
Vdd(V)
Po(
W
)
0
40
80
120
I
dd(
mA)
Po
Idd
Ta=25C
f=30MHz
Pin=4mW
Icq=50mA
Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
Vgs(V)
Id
s(A
)
Vds=10V
Tc=-25~+75C
-25C
+75C
+25C
Vgs-gm CHARACTORISTICS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
Vgs(V)
gm
(S)
Vds=10V
Tc=-25~+75C
-25C
+75C
+25C
3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=30MHz)
82pF
L4:LAL04NA1R0(1uH)
L3:LAL04NAR39(0.39uH)
L2:LAL04NAR39(0.39uH)
L3
22m m
330uF,50V
C2
40pF
8mm
4m m
7.5m m
15OHM
2.5m m
7m m
10uF,50V
10pF
40pF
9m m
L2
13mm
9mm
180pF
L1
M icro strip line width=1.0m m/50OHM,er:4.8,t=0.6m m
Note:Board m aterial-glass epoxi substrate
C1,C2:100pF,0.022uF,0.1uF in parallel
RF-OUT
1kOHM
C1
7mm
14mm
L1:LAL04NAR27(0.27m H)
Vgg
Vdd
470pF
RF-IN
470pF
3mm
15pF
220pF
L4
6m m
RD00HHS1
4/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
10
1.002
-3.6
12.533
178.3
0.003
90.3
0.920
-2.7
30
1.003
-9.9
12.631
174.6
0.008
82.8
0.919
-6.9
50
1.005
-16.8
12.784
170.6
0.013
79.5
0.918
-11.2
100
1.007
-33.5
12.820
159.1
0.025
67.4
0.898
-22.4
150
0.989
-49.8
12.355
147.5
0.035
56.5
0.866
-32.8
200
0.963
-64.0
11.571
136.8
0.042
47.5
0.824
-42.2
250
0.936
-76.9
10.697
127.3
0.048
38.2
0.781
-50.4
300
0.911
-87.9
9.791
119.1
0.053
30.6
0.745
-57.9
350
0.892
-97.7
8.972
111.4
0.055
24.6
0.711
-64.6
400
0.872
-106.2
8.202
104.9
0.057
18.5
0.685
-70.2
450
0.857
-113.7
7.533
98.9
0.058
13.1
0.665
-75.5
500
0.846
-120.1
6.921
93.4
0.058
8.7
0.649
-80.5
550
0.834
-126.0
6.386
88.4
0.059
4.7
0.640
-85.2
600
0.830
-131.0
5.894
83.7
0.058
0.2
0.630
-89.2
650
0.826
-135.9
5.484
79.3
0.057
-2.8
0.625
-93.3
700
0.821
-140.2
5.097
75.1
0.056
-6.9
0.623
-97.1
750
0.815
-144.0
4.749
71.0
0.055
-9.8
0.623
-100.7
800
0.812
-147.5
4.443
67.3
0.053
-13.0
0.623
-104.3
850
0.814
-151.0
4.167
63.8
0.051
-15.0
0.627
-107.7
900
0.816
-153.9
3.904
60.1
0.049
-17.6
0.630
-110.9
950
0.811
-156.8
3.670
56.8
0.048
-20.8
0.634
-113.9
1000
0.814
-159.5
3.471
53.7
0.046
-22.2
0.640
-117.1
S22
S12
S21
S11
5/6
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