Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Robotics, Forklifts, Welders
QM600HD-M
I
C
Collector current ........................ 600A
V
CEX
Collector-emitter voltage ........... 350V
h
FE
DC current gain............................. 500
Non-Insulated Type
94
80
5.5
62
48
17
8
25
22
12
14
20
22
E
B
E
BX
64
M4
M6
27
25
21
5.5
8
B
BX
E
E
C
LABEL
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M5
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
350
350
400
10
600
--
2080
15
--
40~+150
40~+125
--
1.96~2.94
20~30
1.47~1.96
15~20
0.98~1.47
10~15
0.98~1.47
10~15
420
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
500
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=350V, V
EB
=2V
V
CB
=400V, Emitter open
V
EB
=10V
I
C
=600A, I
B
=1.2A
I
C
=600A (diode forward voltage)
I
C
=600A, V
CE
=2V
V
CC
=200V, I
C
=600A, I
B1
=2A, I
B2
=4A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
2.0
2.0
800
2.0
2.5
--
--
3.0
15
3.0
0.06
--
0.05
Feb.1999
4
10
3
10
2
10
1
10
2
10
1
10
0
10
1
10
0
10
1
10
0
0
1
2
3
4
5
1.0A
0.4A
0.2A
0.08A
200
400
600
800
1000
T
j
=25C
I
B
=2.0A
7
5
4
3
2
7
5
4
3
2
1.2
1.4
1.6
1.8
2.0
2.2
V
CE
=2.0V
T
j
=25C
0
10
1
10
2
10
7
5
4
3
2
7
5
4
3
2
2 3 4 5
7
2 3 4 5 7
4
10
3
10
2
10
1
10
2
10
3
10
V
CE
=2.0V
T
j
=25C
T
j
=125C
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7
2 3 4 5 7
1
10
0
10
1
10
2
10
3
10
1
10
T
j
=25C
T
j
=125C
I
B
=1.2A
V
CE(sat)
V
BE(sat)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25C
T
j
=125C
t
f
t
s
t
on
I
B1
=2.0A
V
CC
=200V
I
B2
=4.0A
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
2
10
1
10
4
4
4
T
j
=25C
T
j
=125C
I
C
=600A
I
C
=400A
I
C
=200A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Feb.1999
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25C
2
10
3
10
1
10
0
10
4
10
3
10
2
10
1
10
4
4
4
1ms
10ms
DC
t
w
=100
s
0
10
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5 7
2 3 4 5 7
1
10
2
2 3
t
f
3
V
CC
=200V
T
j
=25C
T
j
=125C
I
B1
=2A
I
C
=600A
t
s
2000
1600
1200
0
0
100
200
300
400
500
T
j
=125C
I
B2
=4A
6A
1800
1400
1000
800
600
200
400
7
5
3
2
7
5
3
2
7
5
3
2
0.08
0
7
5
3
2
1
10
0
10
0
10
3
10
2
10
1
10
4
4
4
0.07
0.06
0.05
0.04
0.03
0.02
0.01
3
2
4
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Z
th (jc)
(
C/ W)
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