PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
q
10V DRIVE
q
V
DSS ................................................................................
250V
q
r
DS (ON) (MAX) ..............................................................
0.19
q
I
D .........................................................................................
20A
q
V
iso ................................................................................
2000V
250
30
20
60
20
35
55 ~ +150
55 ~ +150
2000
2.0
V
V
A
A
A
W
C
C
V
g
FL20KM-5A
15
0.3
14
0.5
10
0.3
2.8
0.2
3.2
0.2
1.1
0.2
1.1
0.2
0.75
0.15
2.54
0.25
2.54
0.25
2.6
0.2
4.5
0.2
0.75
0.15
3
0.3
3.6
0.3
6.5
0.3
GATE
DRAIN
SOURCE
V
GS
= 0V
V
DS
= 0V
L = 200
H
AC for 1minute, Terminal to case
Typical value
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
APPLICATION
Inverter type fluorescent light sets, SMPS
Parameter
Conditions
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
V
iso
--
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
T O - 2 2 0 F N
OUTLINE DRAWING
Dimensions in mm
MAXIMUM RATINGS
(Tc = 25C)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
I
D
= 1mA, V
GS
= 0V
I
GS
=
100
A, V
DS
= 0V
V
GS
=
30V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 10A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 10A, V
GS
= 0V
Channel to case
I
S
= 20A, V
GS
= 0V, dis/dt = 100A/
s
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
250
30
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.0
0.15
1.50
12
1300
250
40
25
50
200
80
1.5
--
300
--
--
10
1.0
4.0
0.19
1.90
--
--
--
--
--
--
--
--
2.0
3.57
--
0
10
20
30
40
50
0
200
50
100
150
0
10
20
30
40
50
0
4
8
12
16
20
P
D
= 35W
V
GS
= 20V
Tc = 25
C
Pulse Test
10V
6V
7V
5V
10
1
2
3
5
7
2
10
1
3
5 7
5
7
2
10
2
3
5 7
2
10
3
3
5 7
2
10
0
2
3
5
7
10
-1
2
3
2
3
5
7
tw = 10
s
Tc = 25
C
Single Pulse
100
s
10ms
100ms
1ms
DC
0
4
8
12
16
20
0
2
4
6
8
10
Tc = 25
C
Pulse Test
4V
5V
P
D
= 35W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
GS
= 20V
10V
6V
Symbol
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Unit
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
T
rr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
PERFORMANCE CURVES
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
0
4
8
12
16
20
0
4
8
12
16
20
I
D
= 40A
Tc = 25
C
Pulse Test
10A
20A
0
0.08
0.16
0.24
0.32
0.40
10
-1
2
10
0
3
5 7
2
10
1
3
5 7
2 3
10
2
5 7
V
GS
= 10V
Tc = 25
C
Pulse Test
20V
0
10
20
30
40
50
0
4
8
12
16
20
Tc = 25
C
V
DS
= 10V
Pulse Test
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
Tc =
25
C 75
C 125
C
V
DS
= 10V
Pulse Test
10
3
2
3
10
2
2
3
5
7
10
1
2
3
5
7
3
5
7
2
10
2
3
5 7
2
10
1
2 3
5 7
10
0
2 3
5 7
Ciss
Coss
Crss
Tch = 25
C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
2
3
5
7
7
2
3
5
5
10
2
2
3
4
5
10
1
2
3
4
5
7
5
7
t
d(off)
t
d(on)
t
r
Tch = 25
C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FL20KM-5A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
0
10
20
30
40
50
0
0.8
1.6
2.4
3.2
4.0
125
C
75
C
25
C
V
GS
= 0V
Pulse Test
0
4
8
12
16
20
0
20
40
60
80
100
V
DS
=
T
C
=
200V
100V
50V
Tch = 25
C
I
D
= 20A
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 10A
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
Single Pulse
P
DM
tw
D
=
T
tw
T
0.5
0.01
0.2
Duty = 1.0
0.1
0.05
0.02
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25
C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (
C)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
CHANNEL TEMPERATURE Tch (
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH tw (s)
TRANSIENT THERMAL IMPEDANCE Z
th (ch-c)
(
C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(
BR) DSS
(t
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25
C)
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