Mar.2002
CM75E3U-24F
APPLICATION
Brake
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
I
C .....................................................................
75A
V
CES .........................................................
1200V
Insulated Type
1-element in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
RTC
CIRCUIT DIAGRAM
C2E1
E2
C1
G2
E2
CM
G1
E1
E2
G2
C2 E1
C 1
E 2
27
24
24
94
16
16
2.5
21.2
7
.5
2.5
25
7
17
23
24
11
4
13
48
23
4
12
13.5
1MAX
80
0.25
2
6.5 MOUNTING HOLES
3M5 NUTS
12mm deep
TAB #110. t=0.5
30
+1
0.5
LABEL
Tc measured point
Mar.2002
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
1200
20
75
150
75
150
450
1200
75
150
40 ~ +150
40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
V
V
A
A
A
A
W
V
A
A
C
C
V
N m
N m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Clamp diode part
T
C
= 25
C
Clamp diode part
Pulse
Clamp diode part
(Note 2)
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
V
RRM
I
F
I
FM
T
j
T
stg
V
iso
--
--
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
V
CC
= 600V, I
C
= 75A
V
GE1
= V
GE2
= 15V
R
G
= 4.2
, Inductive load switching operation
I
E
= 75A
I
E
= 75A, V
GE
= 0V
IGBT part
FWDi part
Tc measured point is just under the chips
I
F
= 75A, Clamp diode part
I
F
= 75A
V
CC
= 600V, V
GE1
= V
GE2
= 15V
R
G
= 4.2
, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied
*2
(1/2 module)
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1
20
2.4
--
29
1.3
0.75
--
100
50
400
300
150
--
3.2
42
0.28
0.47
0.22
*3
3.2
150
--
0.47
--
mA
A
nF
nF
nF
nC
ns
ns
ns
ns
C
V
C/W
C/W
C/W
V
ns
C
C/W
C/W
--
--
1.8
1.9
--
--
--
825
--
--
--
--
--
3.1
--
--
--
--
--
--
--
3.1
--
0.07
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
4.2
--
--
--
--
--
--
--
--
6
V
V
5
7
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
*1
Contact thermal resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
G
R
th(j-c)
Q
R
th(j-c)
R
R
th(j-c')
Q
V
FM
t
rr
Q
rr
R
th(j-c)
R
R
th(c-f)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Unit
Typ.
Limits
Min.
Max.
Mar.2002
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
25
50
75
100
125
150
0
0
0.5
1
1.5
2
2.5
3
3.5
4
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0.5
1
1.5
3
3.5
2
2.5
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
0.5
1
1.5
2
2.5
3
0
150
0
50
100
5
4
3
2
1
0
6
8
10
12
14
16
18
20
10
0
10
1
2
3
5 7
10
2
2
3
5 7
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
9
8.5
8
11
15
10
9.5
V
GE
=20V
T
j
=25
C
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
T
j
= 25
C
V
GE
= 0V
C
ies
C
oes
C
res
t
d(off)
t
d(on)
t
f
t
r
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 4.2
T
j
= 125
C
Inductive load
I
C
= 150A
I
C
= 75A
I
C
= 30A
T
j
= 25
C
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE AND CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Mar.2002
MITSUBISHI IGBT MODULES
CM75E3U-24F
HIGH POWER SWITCHING USE
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
3
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
0
2
4
6
8
10
12
14
16
18
20
0
200
400
600
800
1000 1200
10
5
10
4
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
3
2
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
I
rr
t
rr
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 4.2
T
j
= 25
C
Inductive load
V
CC
= 400V
V
CC
= 600V
I
C
= 75A
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part & CLAMP DIODE part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
c)
(
C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
IGBT part: Per unit base = R
th(jc)
= 0.28
C/W
FWDi part: Per unit base = R
th(jc)
= 0.47
C/W
CLAMP Di part: Per unit base = R
th(jc)
= 0.47
C/W
PDF 
ZIP