2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 7
Features
Self Bias Architecture
16.0 dB Small Signal Gain
2.5 dB Noise Figure
+13.0 dBm P1dB Compression Point
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
9.0
10.0
16.0
+/-1.0
30.0
2.5
+13.0
+31.0
+22.0
+8.0
70
Max.
18.0
-
-
-
-
-
-
-
-
-
+8.5
90
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
110 mA
+20 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband's two stage 2.0-18.0 GHz GaAs MMIC
low noise amplifier has a small signal gain of 16.0 dB
with a noise figure of 2.5 dB across the band. This MMIC
uses Mimix Broadband's 0.3 m GaAs PHEMT device
model technology, and is based upon optical beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for fiber optic, microwave radio, military, space,
telecom infrastructure, test instrumentation and VSAT
applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Second Order Intercept Point (OIP2)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Supply Current (Id) (Vd1,2=8.0V)
CMM1110
May 2006 - Rev 01-May-06
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Page 2 of 7
Low Noise Amplifier Measurements
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM1110
May 2006 - Rev 01-May-06
CMM1110 Vd=8.0 V Id=70 mA
8
9
10
11
12
13
14
15
16
17
18
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Frequency (GHz)
Ga
i
n
(
d
B
)
-25
-20
-15
-10
-5
0
5
10
15
20
25
I
n
p
u
t/
O
u
tp
u
t
Re
tu
r
n
L
o
s
s
(d
B)
S21
S11
S22
CMM1110 Vd=8.0 V Id=70 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
Frequency (GHz)
N
o
i
s
e
Fi
gur
e
(
d
B
)
CMM1110 Vd=8.0 V Id=70 mA
8
9
10
11
12
13
14
15
16
17
18
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Frequency (GHz)
Ou
t
p
u
t
P
o
w
e
r P
1
d
B
(
d
B
m
)
CMM1110 Vd=8.0V Id=70 mA
10
11
12
13
14
15
16
17
18
19
20
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Frequency (GHz)
Ou
t
p
u
t
P
o
we
r P
s
a
t
(
d
B
m
)
Page 3 of 7
Low Noise Amplifier Measurements (cont.)
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM1110
May 2006 - Rev 01-May-06
CMM1110 Vd=8.0 V Id=70 mA
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Frequency (GHz)
I
nput
R
e
t
u
r
n
Los
s
(
d
B
)
88degC
-45degC
25degC
CMM1110 Vd=8.0 V Id=70 mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Frequency (GHz)
O
u
tp
u
t
Re
tu
r
n
L
o
s
s
(d
B)
88degC
-45degC
25degC
CMM1110 Vd=8.0 V Id=70 mA
10
11
12
13
14
15
16
17
18
19
20
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Frequency (GHz)
Ga
i
n
(
d
B
)
88degC
-45degC
25degC
CMM1110 Vd=8.0 V Id=70 mA
9
10
11
12
13
14
15
16
17
18
19
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0
Frequency (GHz)
Out
p
u
t
P
o
w
e
r P
1
d
B
(
d
B
m
)
+85C
-40C
+25C
Page 4 of 7
S-Parameters
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM1110
May 2006 - Rev 01-May-06
Typcial S-Parameter Data for CMM1110
V
d=8.0 V Id=70 m
A
Frequency
S11
S11
S21
S21
S12
S12
S22
S22
(GHz)
(Mag)
(Ang)
(Mag)
(Ang)
(Mag)
(Ang)
(Mag)
(Ang)
0.1
0.997
-17.15
0.001
-114.78
0.000
-2.60
0.901
-25.83
0.5
0.906
-90.42
0.103
36.33
0.003
-145.29
0.569
-66.48
1.0
0.492
102.37
6.952
-179.41
0.005
113.10
0.325
-145.18
2.0
0.145
-47.14
6.861
28.61
0.016
49.95
0.260
-167.45
3.0
0.199
-63.22
6.453
-32.19
0.018
17.23
0.268
168.55
4.0
0.270
-85.42
6.167
-76.77
0.018
-3.67
0.298
147.47
5.0
0.317
-105.34
5.928
-114.26
0.019
-19.66
0.331
127.77
6.0
0.342
-122.00
5.771
-147.92
0.019
-33.14
0.364
109.00
7.0
0.349
-135.78
5.690
-179.65
0.020
-45.25
0.391
90.67
8.0
0.345
-147.36
5.703
149.56
0.020
-56.83
0.405
73.00
9.0
0.332
-156.91
5.739
118.77
0.021
-67.52
0.404
55.71
10.0
0.319
-164.69
5.788
87.98
0.023
-80.40
0.381
39.29
11.0
0.304
-172.07
5.798
56.72
0.024
-92.40
0.338
25.05
12.0
0.289
-179.76
5.777
25.61
0.025
-105.35
0.282
14.08
13.0
0.273
170.53
5.757
-4.90
0.027
-118.26
0.223
8.05
14.0
0.258
157.12
5.820
-36.22
0.027
-131.84
0.170
14.22
15.0
0.225
134.24
5.923
-68.90
0.030
-144.59
0.170
28.25
16.0
0.181
94.45
6.006
-103.58
0.033
-158.59
0.213
33.40
17.0
0.162
40.64
6.097
-141.30
0.038
-176.87
0.246
29.74
18.0
0.217
-2.51
5.883
176.61
0.041
160.70
0.275
25.57
19.0
0.321
-25.79
5.293
132.20
0.043
136.30
0.313
23.02
20.0
0.510
-41.55
4.307
83.26
0.043
106.92
0.405
14.73
21.0
0.746
-66.30
2.832
33.61
0.034
72.39
0.478
-6.57
22.0
0.873
-90.28
1.562
-6.84
0.022
47.32
0.461
-29.63
23.0
0.905
-108.19
0.827
-37.04
0.014
27.92
0.405
-46.68
24.0
0.911
-121.78
0.450
-60.61
0.008
24.21
0.332
-62.86
25.0
0.898
-132.62
0.250
-78.36
0.004
39.39
0.277
-77.72
26.0
0.860
-138.73
0.149
-90.32
0.006
81.72
0.215
-91.15
27.0
0.896
-144.55
0.097
-103.13
0.007
51.61
0.174
-108.96
28.0
0.910
-151.12
0.066
-123.11
0.005
69.19
0.130
-139.57
29.0
0.912
-156.95
0.040
-138.03
0.004
59.81
0.102
171.38
30.0
0.921
-162.26
0.022
-155.11
0.005
72.46
0.098
104.62
Page 5 of 7
Mechanical Drawing
Bias Arrangement
Bypass Capacitors
- See App Note [2]
(Note: Engineering designator is M420)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.080 x 0.080 (0.003 x 0.003). All RF Bond Pads are 0.180 x 0.080 (0.007 x 0.003).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.364 mg
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd1)
Bond Pad #4 (Vd2)
Bond Pad #5 (RF Out)
Bond Pad #6 (Rs2-32 )
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM1110
May 2006 - Rev 01-May-06
Bond Pad #7 (Rs2-20.0 )
Bond Pad #8 (Rs2-15 )
Bond Pad #9 (Vg2)
Bond Pad #10 (Rs1-32 )
Bond Pad #11 (Rs1-20 )
Bond Pad #12 (Rs1-15 )
5
1
6
1.100
(0.043)
0.520
(0.021)
2
1.009
(0.040)
0.0
0.0
2.000
(0.079)
1.908
(0.075)
7
1.798
(0.071)
9
1.383
(0.054)
8
1.688
(0.067)
10
0.979
(0.039)
11
0.869
(0.034)
12
0.759
(0.030)
3
0.949
(0.037)
0.091
(0.036)
4
1.908
(0.075)
0.520
(0.021)
5
1
6
2
7
9
8
10
11
12
3
4
Vd1,2
RF In
RF Out
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