MSC1343.PDF 010-29-99
2N7372 - PNP
2N7373 - NPN
ABSOLUTE MAXIMUM RATINGS:
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
2N7372
2N7373
UNITS
V
CBO
Collector-Base Voltage
- 100
100
V
V
CEO
Collector-Emitter Voltage
- 80
80
V
V
EBO
Emitter-Base Voltage
- 5.5
5.5
V
I
C
Continuous Collector Current
5
5
A
I
C
Peak Collector Current
10
10
A
I
B
Continuous Base Current
2
2
A
T
STG
Storage Temperature
-65 to 200
C
T
J
Operating Junction Temperature
-65 to 200
C
Lead Temperature 1/16" from cast for 10 sec.
300
C
Unclamped Inductive Load Energy
15
mj
P
T
Continuous Device
Dissipation T
C
= 25
C
58
58
W
T
C
= 100
C
33
33
W
JC
Thermal Resistance Junction to Case
3
3
C/W
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
FEATURES:
FEATURES:
Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with I
C
= 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
TO-254AA
APPLICATIONS:
APPLICATIONS:
Power Supply
Inverters and Converters
General Purpose Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200
C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.
MSC1343.PDF 010-29-99
2N7372 - PNP
2N7373 - NPN
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(25
Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
V
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100 mA, I
B
= 0
80
----
V
I
CEO
Collector Cutoff Current,
Base Open
I
B
= 0,
V
CE
= 40 V
----
50
A
I
CES
Collector Cutoff
Current, Emitter-Base Short
V
CE
=
100 V
V
CE
=
60 V
----
----
1
1
mA
A
I
CEX
Collector Cutoff Current
V
BE
=
60 V, VBE = 2 V, T
C
= 150
C
----
500
A
I
EBO
Emitter Cutoff
Current
V
EB
= 5.5 V,
I
C
=0
V
EB
= 4.0 V,
I
C
=0
----
----
1
1
mA
A
H
FE
Static Forward Current
Transfer Ratio
I
C
= 5.0 A, V
CE
=
5.0 V
I
C
= 2.5 A, V
CE
=
5.0 V
I
C
= 2.5 A, V
CE
=
5.0 V, T
C
= -55
C
I
C
= 50 mA, V
CE
=
5.0 V
40
70
25
50
----
200
----
----
----
----
----
----
V
BE
Base-Emitter Volatage
I
C
= 2.5 A, V
CE
=
5.0 V
----
1.45
V
V
BE(sat)
Base-Emitter Saturation
Voltage
I
C
= 2.5 A, I
B
= 0.25 A
I
C
= 5.0 A, I
B
= 0.5 A
----
----
1.45
2.2
V
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
I
C
= 5.0 A, I
B
= 0.5 A
I
C
= 2.5 A, I
B
= 0.25 A
----
----
1.5
0.75
V
----
H
FE
Small Signal Common-
Emitter Forward Current
Transfer Ratio
V
CE
=
5.0 V, I
C
= 100 mA, F = 1.0 KHz
50
----
----
Ihfel
Small Signal Common
Emitter Forward Current
Transfer Ratio
V
CE
= 5.0 V, I
C
= 0.5A, F = 10 MHz
7.0
----
----
C
OBO
Open-Circuit Output
Capacitance
V
CB
= 10 V, I
E
= 0A, F = 0.1 MHz
----
250
pF
t
on
Turn-on Time
----
0.5
s
t
off
Turn-off Time
I
C
= 5.0 A, I
B
1
=
I
B
2
= 0.5 A
V
BE
(OFF)
= 3.7V
----
1.5
s
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