A Microsemi Company
580 Pleasant St.
Phone: 617-924-9280
Watertown, MA 02472
Fax: 617-924-1235
DIE SPECIFICATION
60V 300mA
MONOLITHIC DIODE ARRAY
FEATURES:
16 DIODE CORE DRIVER
trr < 20 ns
RUGGED AIR-ISOLATED CONSTRUCTION
LOW REVERSE LEAKAGE CURRENT
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
60
Vdc
IO *1
Continuous Forward Current
300
mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s)
500
mAdc
Top
Operating Junction Temperature Range
-65 to +150 C
Tstg
Storage Temperature Range
-65 to +200 C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
Symbol Parameter
Conditions
Min
Max
Unit
BV1
Breakdown Voltage
IR = 10uAdc
60
Vf1
Forward Voltage
IF = 100mAdc *1
1
Vdc
Vf2
Forward Voltage
IF = 500mAdc *1
1.5
Vdc
IR1
Reverse Current
VR = 40 Vdc
0.1
uAdc
Ct
Capacitance (pin to pin)
VR = 0 Vdc; f = 1 MHz
8.0
pF
tfr
Forward Recovery Time
IF = 500mAdc
40
ns
trr
Reverse Recovery Time
IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms
20
ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.
MSC1024.PDF Rev - 12/3/98
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Metallization Options:
Standard: Al Top / Au Backside (No Dash #)
Processing Options:
Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
ORDERING INFORMATION
PART #: 16M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Electrical Characteristics (Per Diode) @ 25C unless otherwise specified
16M0
J
A
C
A
J
J
J
J
J
J
J
.054"
.060"
Absolute Maximum Ratings:
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