FEATURES
Switchable organization
- 512K x 8 (byte mode)
- 256K x 16 (word mode)
Single +5V power supply
Fast access time:100/120/150ns
Totally static operation
PIN DESCRIPTION
Symbol
Pin Function
A0~A17
Address Input
Q0~Q14
Data Output
CE
Chip Enable Input
OE
Output Enable Input
BYTE
Word/Byte Selection
Q15/A-1
Q15(Word mode)/LSB address(Byte
mode)
VCC
Power Supply Pin (+5V)
VSS
Ground Pin
GENERAL DESCRIPTION
The MX23C4100 is a 5V only, 4M-bit, Read Only
Memory. It is organized as 512Kx8 bits (byte mode) or
as 256Kx16 bit (word mode) depending on BYTE (pin
31) voltage level. MX23C4100 has a static standby
mode, and has an access time of 100/120/150/200ns.
It is designed to be compatible with all microprocessors
and similar applications in which high performance, large
bit storage and simple interfacing are important design
considerations.
Completely TTL compatible
Operating current: 60mA
Standby current: 100uA
Package
- 40 pin DIP (600 mil)
- 40 pin SOP
PIN CONFIGURATION
40 PDIP/SOP
MX23C4100 offers automatic power-down, with power-
down controlled by the chip enable (CE) input. When
CE is not selected, the device automatically powers
down and remains in a low-power standby mode as long
as CE stays in the unselected mode.
The OE input as well as OE input may be programmed
active Low.
BLOCK DIAGRAM
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REV. 3.8, JUN. 19, 2003
MX23C4100
4M-BIT [512K x 8/256K x 16] MASK ROM
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q14
CE
OE
BYTE
Q15/A-1
A0~A17
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-DECODER
4M BIT
ROM ARRAY
VCC
VSS
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
MX23C4100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
2
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REV. 3.8, JUN. 19, 2003
MX23C4100
TRUTH TABLE OF BYTE FUNCTION
BYTE MODE (BYTE=VSS)
CE
OE
D15/A-1
MODE
D0-D7
SUPPLY CURRENT
NOTE
H
X
X
Non selected
High Z
Standby (ICC2)
1
L
H
X
Non selected
High Z
Operating (ICC1)
1
L
L
A-1 input
Selected
DOUT
Operating (ICC1)
1
WORD MODE (BYTE=VCC)
CE
OE
D15/A-1
MODE
D0-D7
SUPPLY CURRENT
NOTE
H
X
High Z
Non selected
High Z
Standby (ICC2)
1
L
H
High Z
Non selected
High Z
Operating (ICC1)
1
L
L
DOUT
Selected
DOUT
Operating (ICC1)
1
ABSOLUTE MAXIMUM RATINGS*
RATING
VALUE
Ambient Operating Temperature
0
C to 70
C
Storage Temperature
-65
C to 125
C
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to 7.0V
VCC to Ground Potential
-0.5V to 7.0V
Power Dissipation
1.0W
*Note:
Stress greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended
period may affect reliability.
NOTE1:X=H or L
DC CHARACTERISTICS (Ta = 0
C ~ 70
C, VCC = 5V
10%)
Item
Symbol
MIN.
MAX.
Conditions
Output High Voltage
VOH
2.4V
-
IOH = -1.0mA
Output Low Voltage
VOL
-
0.4V
IOL = 2.1mA
Input High Voltage
VIH
2.2V
VCC+0.3V
Input Low Voltage
VIL
-0.3V
0.8V
Input Leakage Current
ILI
-
10uA
VIN=0 to 5.5V
Output Leakage Current
ILO
-
10uA
VOUT=0 to 5.5V
Power-Down Supply Current
ICC3
-
100uA
CE>VCC-0.2V
Standby Supply Current
ICC2
-
1.0mA
CE = VIH
Operating Supply Current
ICC1
-
60mA
Note 1
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REV. 3.8, JUN. 19, 2003
MX23C4100
CAPACITANCE (Ta = 25
C, f=1.0MHz (Note 2))
Item
Symbol
MIN.
MAX.
UNIT
Conditions
Input Capacitance
CIN
-
10
pF
VIN=0V
Output Capacitance
COUT
-
10
pF
VOUT=0V
AC Test Conditions
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
10ns
Input Timing Level
1.5V
Output Timing Level
0.8V and 2.0V
Output Load
1TLL+100pF
AC CHARACTERISTICS (Ta = 0
C ~ 70
C, VCC = 5V
10%)
Item
Symbol
23C4100-10
23C4100-12
23C4100-15
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Cycle Time
tCYC
100ns
-
120ns
-
150ns
-
Address Access Time
tAA
-
100ns
-
120ns
-
150ns
Output Hold Time After
tOH
0ns
-
0ns
-
0ns
-
Address Change
Chip Enable Access Time
tACE
-
100ns
-
120ns
-
150ns
Output Enable Select
tAOE
-
50ns
-
70ns
-
80ns
Access Time
Output High Z Delay
tHZ
-
20ns
-
20ns
-
20ns
Note:
1. Measured with device selected at f=5 MHz and output unloaded.
2. This parameter is periodically sampled and is not 100% teseted.
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REV. 3.8, JUN. 19, 2003
MX23C4100
TIMING DIAGRAM
RANDOM READ
tACE
tAA
tOH
tHZ
ADD
ADD
ADD
ADD
CE
OE
DATA
Note:CE, OE are enable
VALID
VALID
VALID
tRC
tOE
5
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REV. 3.8, JUN. 19, 2003
MX23C4100
PACKAGE INFORMATION
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MX23C4100
7
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MX23C4100
REVISION HISTORY
REVISION
DESCRIPTION
PAGE
DATE
3.3
AC CHARACTERISTICS tOH 10ns-->0ns
P3
JAN/29/1999
3.4
Modify MX23C4100-10 AC Characteristics:tAOE:60ns-->50ns(max.) P3
OCT/17/2000
tHZ:70ns-->20ns(max.)
P3
3.5
Delete Fast time:200ns
P1,3
JAN/19/2001
Modify CE/CE-->CE ; OE/OE-->OE
P1,2
Modify AC Characteristics
P3
Modify Timing Diagram
P4
Delete Order Information
P5
3.6
Modify Package Information
P5,6
JUL/16/2001
3.7
Modify Package Information
P5,6
NOV/21/2002
3.8
Modify 40-PDIP Package Information
P5
JUN/19/2003
MX23C4100
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