GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated
s
North America: Tel. (800) 366-2266, Fax (800) 618-8883
s
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Ordering Information
Part Number
Package
AM42-0040
Ceramic Bolt Down Package
Electrical Specifications:
T
A
= +25C, V
DD
= +9V, V
GG
adjusted for I
DD
= 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter
Abbv.
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
G
L
P
IN
-10 dBm
dB
27
30
--
Input VSWR
VSWR
IN
P
IN
-10 dBm
--
--
2.3:1
2.7:1
Output VSWR
VSWR
OUT
P
IN
-10 dBm
--
--
3.0:1
--
Output Power
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
dBm
31.7
33.0
34.3
Output Power vs. Frequency
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
dB
--
1.0
1.5
Output Power vs. Temperature
(with respect to T
A
=+25C)
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
T
A
= -40C to +70C
dB
--
0.4
--
Drain Bias Current
I
DD
P
IN
=
+10 dBm
mA
900
1050
1100
Gate Bias Voltage
V
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
V
-2.4
-1.2
-0.4
Gate Bias Current
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
mA
--
5
20
Thermal Resistance
JC
25C Heat Sink
C/W
--
5.6
--
Second Harmonic
f
2
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
dBc
--
-35
--
Third Harmonic
f
3
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
dBc
--
-45
--
CR-15
Features
High Linear Gain: 30 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 26% Typ.
50
Input/Output Broadband Matched
High Performance Ceramic Bolt Down Package
Description
M/A-COM's AM42-0040 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0040 employs an internally matched monolithic chip
with internally decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0040 is designed for use as an output stage or
driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a
minimum of external components.
M/A-COM's AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These
amplifiers are 100% RF tested to ensure compliance to
performance specifications.
GaAs MMIC VSAT Power Amplifier, 2W
5.9 - 6.4 GHz
AM42-0040
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = 0.005
.XX = 0.010
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated
s
North America: Tel. (800) 366-2266, Fax (800) 618-8883
s
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Typical Bias Configuration
4,5,6,7
Absolute Maximum Ratings
1,2,3,4
Parameter
Absolute Maximum
Input Power
+23 dBm
V
DD
+12 Volts
V
GG
-3 Volts
V
DD
- V
GG
12 Volts
I
DD
1700 mA
Channel Temperature
-40C to +85C
Storage Temperature
-65C to +150C
1. Exceeding any one or a combination of these limits may cause
permanent damage.
2. Case Temperature (T
C
) = +25C.
3. Nominal bias is obtained by first connecting -2.4 volts to pin 5
(V
GG
), followed by connecting +9 volts to pin 10 (V
DD
). Note se-
quence. Adjust V
GG
for a drain current of 1050 mA typical.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc supply voltage will appear at the RF ports.
6. The dc resistance at the input and output ports is a short circuit.
No voltage is allowed on these ports.
7. For optimum IP
3
performance, the V
DD
bypass capacitors should
be placed within 0.5 inches of the V
DD
leads.
Pin No.
Pin Name
Description
1
N/C
No Connection
2
GND
DC and RF Ground
3
RF In
RF Input
4
GND
DC and RF Ground
5
V
GG
Gate Supply
6
N/C
No Connection
7
GND
DC and RF Ground
8
RF Out
RF Output
9
GND
DC and RF Ground
10
V
DD
Drain Supply
Pin Configuration
AM42-0040
F
3.3
F
0.01
F
1.0
3
RF IN
RF OUT
8
10
V
DD
V
GG
GND
2,4,7,9
5
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated
s
North America: Tel. (800) 366-2266, Fax (800) 618-8883
s
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Typical Performance @ +25C
-40
-30
-20
-10
0
10
20
30
40
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Magnitude (dB)
S11
S22
0
5
10
15
20
25
30
35
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
8.0
Frequency (GHz)
P
OUT
(dBm)
Output Power vs Frequency
@ P
IN
= +10 dBm
0
5
10
15
20
25
30
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
8.0
Frequency (GHz)
PAE (%)
Power Added Efficiency (PAE) vs. Frequency
@ P
IN
= +10 dBm
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
P
IN
(dBm)
P
OUT
(dBm)
Output Power vs. Input Power
@ 6.15 GHz
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
P
IN
(dBm)
PAE (%)
Power Added Efficiency vs. Input Power
@ 6.15 GHz
Linear Gain vs. Frequency
Input and Output Return Loss vs. Frequency
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
M/A-COM Division of AMP Incorporated
s
North America: Tel. (800) 366-2266, Fax (800) 618-8883
s
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
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