10-12
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
GaAlAs T-1
3
/
4
Modified 5
Infrared Emitting Diode
LTE-2871/LTE-2871C
Features
Selected to specific on-line intensity and radiant inten-
sity ranges.
Low cost plastic end looking package.
T-1
3
/
4
modified package.
The LTE-2871 series are made with Gallium Aluminum
Arsenide window layer on Gallium Arsenide infrared
emitting diodes.
Description
The LTE-2871 series are high intensity Gallium Aluminum
Arsenide infrared emitting diodes mounted in clear plas-
tic end looking packages. The LTE-2871 series provides
a broad range of intensity selection. Suffix C-smoke
color lens.
Parameter
Power Dissipation
Peak Forward Current(300pps, 10
s pulse)
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
260
for 5 Seconds
Parameter
T e s t
Condition
*Aperture Radiant Incidence
Radiant Intensity
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
Reverse Current
View Angle (See Fig. 6)
Ee
Ie
Peak
V
F
I
R
2
1
/
2
0.7
5.25
1.6
12
940
50
1.2
16
1.6
100
mW/cm
2
mW/sr
nm
nm
V
A
deg
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
V
R
=5V
90
1
60
5
mW
A
mA
V
-40
to +85
-55
to +100
Absolute Maximum Ratings at Ta=25
Maximum Rating
Unit
Symbol
Min.
Typ.
Max.
Unit
Electrical Optical Characteristics at Ta=25
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm
2
in perpendicular to and
centered on the mechanical axis of the lens and 26.8mm from lens.
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