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Электронный компонент: GP250MLS06S

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GP250MLS06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
KEY PARAMETERS
V
CES
600V
V
CE(sat)
*
(typ)
2.2V
I
C25
(max) 350A
I
C75
(max) 250A
I
C(PK)
(max) 700A
*(measured at the power busbars and not the auxiliary terminals)
FEATURES
s
Low Side Chopper Switch
s
n - Channel IGBT
s
Isolated Base
APPLICATIONS
s
Choppers
s
Motor Control
s
Power Supplies
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MLS06S is a 600V n channel enhancement mode
insulated gate bipolar transistor (IGBT) chopper module
configured with the lower arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order as:
GP250MLS06S
Note: When ordering, use complete part number.
GP250MLS06S
IGBT Chopper Module
Preliminary Information
DS5570-1.1 November 2002
1
2
3
11
10
8
9
5
4
6
7
3(K)
1(A,C2)
2(E2)
11(C
2
)
6(G
2
)
7(E
2
)
Fig. 1 Chopper circuit diagram - lower arm controlled
Fig. 2 Electrical connections - (not to scale)
Outline type code: M
(See package details for further information)
GP250MLS06S
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
V
CES
Collector-emitter voltage
-
DC, T
case
= 25C
1ms, T
case
= 25C
350
A
Test Conditions
Symbol
I
C
Gate-emitter voltage
V
GE
= 0V
600
Units
V
20
700
Max.
Parameter
Collector current
1250
Maximum power dissipation
P
max
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltage
V
isol
V
2500
V
V
GES
A
I
C(PK)
W
(Transistor)
DC, T
case
= 75C
250
A
1ms, T
case
= 75C
A
500
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
GP250MLS06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Al
2
O
3
Baseplate material:
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
87
194
15
150
125
125
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
GP250MLS06S
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
C
ies
Input capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
27000
-
pF
I
F
Diode forward current
I
FM
Diode maximum forward current
DC
t
p
= 1ms
A
250
500
-
-
-
-
V
F
Diode forward voltage
(IGBT and diode arms
I
F
= 250A,
1.9
1.1
-
A
V
I
F
= 250A, T
j
= 125C
1.8
1.05
-
V
ELECTRICAL CHARACTERISTICS
Symbol
Collector cut-off current
(IGBT and diode arms)
I
GES
Gate leakage current
Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
=
20V, V
CE
= 0V
mA
15
1
Max.
-
Typ.
-
-
Min.
-
Parameter
T
j
= 25C unless stated otherwise.
V
7.5
2.7
2.2
-
Gate threshold voltage
V
GE
= 15V, I
C
= 250A
-
4
I
C
= 10mA, V
GE
= V
CE
Units
I
CES
A
V
GE(TH)
V
2.8
2.3
-
V
GE
= 15V, I
C
= 250A, T
j
= 125C
V
V
CE(SAT)
Collector-emitter saturation voltage
V
GE
= 0V, V
CE
= V
CES
, T
j
= 125C
mA
50
-
-
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + L
M
GP250MLS06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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INDUCTIVE SWITCHING CHARACTERISTICS
T
j
= 25C unless stated otherwise
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
ns
ns
mJ
-
-
-
20
310
-
-
-
Parameter
Min.
Typ.
Max.
Units
810
t
f
t
d(on)
Turn-on delay time
ns
-
-
330
Rise time
E
ON
Turn-on energy loss
ns
mJ
-
-
12
130
-
-
t
r
I
C
= 250A
V
GE
=
15V
V
CE
= 50% V
CES
R
G(ON)
= R
G(OFF)
= 5
L ~ 100nH
T
j
= 125C unless stated otherwise.
t
rr
Diode reverse recovery time
ns
-
165
-
Q
rr
Diode reverse recovery charge
C
-
15
-
I
F
= 250A
V
R
= 50%V
CES
, dI
F
/dt = 1500A/
s
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
ns
ns
mJ
-
-
-
30
450
-
-
-
1050
t
f
t
d(on)
Turn-on delay time
ns
-
-
380
Rise time
E
ON
Turn-on energy loss
ns
mJ
-
-
18
160
-
-
t
r
I
C
= 250A
V
GE
=
15V
V
CE
= 50% V
CES
R
G(ON)
= R
G(OFF)
= 5
L ~ 200nH
t
rr
Diode reverse recovery time
ns
-
230
-
Q
rr
Diode reverse recovery charge
C
-
23
-
I
F
= 250A
V
R
= 50%V
CES
, dI
F
/dt = 1500A/
s