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Электронный компонент: DS2907SZ52

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DS2907SZ
DS5737-1.0 February 2004
FEATURES
I
Double Side Cooling
I
High Surge Capability
APPLICATIONS
I
Rectification
I
Freewheel Diode
I
DC Motor Control
I
Power Supplies
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2907SZ48
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
5200V
I
F(AV)
4914A
I
FSM
70000A
DS2907SZ
Rectifier Diode
5200
5000
4800
4600
4400
DS2907SZ52
DS2907SZ50
DS2907SZ48
DS2907SZ46
DS2907SZ44
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: Z
See Package Details for further information.
Fig. 1 Package outline
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DS2907SZ
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
3768
A
-
5916
A
-
5414
A
Half wave resistive load
2433
A
-
3820
A
-
3256
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
4914
A
-
7715
A
-
7150
A
Half wave resistive load
3213
A
-
5044
A
-
4407
A
T
case
= 100
o
C unless otherwise stated
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DS2907SZ
SURGE RATINGS
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
24.5 x 10
6
A
2
s
70
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.013
Anode dc
Clamping force 83.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.001
Double side
-
150
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
75.0
91.0
kN
55
150
o
C
Forward (conducting)
160
o
C
-
0.002
o
C/W
o
C/W
Cathode dc
-
0.013
o
C/W
Double side cooled
-
0.0065
o
C/W
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
Symbol
V
FM
I
RM
At V
RRM
, T
case
= 150
o
C
-
200
mA
-
1.17
V
At 3000A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
-
-
At T
vj
= 150C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.111
m
At T
vj
= 150C
-
0.82
V
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DS2907SZ
CURVES
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
Instantaneous forward current, I
F
- (A)
T
j
= 150C
Fig. 2 Maximum (limit) forward characteristics
Fig. 3 Power loss curves - sine wave
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0
1000
2000
3000
4000
5000
Mean forward current, I
F
- (A)
Mean power dissipation - (W)
180
120
90
60
30
15
Conduction angle
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0
1000
2000
3000
4000
5000
6000
Mean forward current, I
F(AV)
- (A)
Mean power dissipation - (W)
360
180
120
90
60
30
Conduction angle
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.0436
B = 0.10422
C = 7.6 x 10
5
D = 0.00243
these values are valid for T
j
= 125C for I
F
= 400A to 9000A
Fig. 4 Power loss curves - square wave
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DS2907SZ
0
50
100
150
200
250
300
350
400
450
0
2
4
6
8
10
12
Rate of decay of forward current, dI
F
/dt - (A/us)
Reverse receovery current I
RR
- (A)
Fig. 7 Maximum (limit) transient thermal impedance -
junction to case - (C/W)
Fig. 5 Stored charge
Fig. 6 Reverse recovery current
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
0
1
2
3
4
5
6
7
8
9
10
Rate of decay of forward current, dI
F
/dt - (A/s)
Stored charge, Q
S
- (
C)
I
RR
I
F
dI
F
/dt
Q
S
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (

C/W)
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.0065
0.0072
0.0073
0.0076
Single side
0.013
0.0137
0.0138
0.0141