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DIM600NSM45-F000
Single Switch IGBT Module
DS5873-1.1 February 2006 (LN24464)
FEATURES
10s Short Circuit Withstand
Soft Punch Through Silicon
Lead Free construction
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM600NSM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety
.
ORDERING INFORMATION
Order As:
DIM600NSM45-F000
Note: When ordering, please use the complete part number
KEY PARAMETERS
V
CES
4500V
V
CE(sat)
*
(typ)
2.9 V
I
C
(max) 600A
I
C(PK)
(max) 1200A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
DIM600NSM45-F000
2/8
:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate
safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
=0V
4500
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
=100 C
600
A
I
C(PK)
Peak collector current
1ms, T
case
=115 C
1200
A
P
max
Max.transistor power
dissipation
T
case
=25 C, T
j
=150 C
10.4
kW
V
isol
Isolation voltage-per module
Commoned terminals to base plate. AC RMS,1
min,50Hz
6000
kV
Q
PD
Partial discharge-per module
IEC1287.V
1
=3750V, V
2
=2750V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
29mm
Clearance:
20mm
CTI (Critical Tracking Index)
175
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
R
th(j-c)
Thermal resistance -transistor (per switch)
Continuous dissipation -
junction to case
-
12
C/kW
R
th(j-c)
Thermal resistance -diode (per switch)
Continuous dissipation -
junction to case
-
24
C/kW
R
th(c-h)
Thermal resistance -case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
8
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections -M4
-
-
2
Nm
Electrical connections -M8
-
-
10
Nm
DIM600NSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
CES
Collector cut-off current
V
GE
=0V,V
CE
=V
CES
1
mA
V
GE
=0V,V
CE
=V
CES
,T
case
=125 C
60
mA
I
GES
Gate leakage current
V
GE
=
20V,V
CE
=0V
8
uA
V
GE(TH)
Gate threshold voltage
I
C
=80mA,V
GE
=V
CE
5.5
6.5
7.0
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
=15V,I
C
=600A
2.9
V
V
GE
=15V,I
C
=600A,T
VJ
=125 C
3.5
V
I
F
Diode forward current
DC
600
A
I
FM
Diode maximum forward current
t
p
=1ms
1200
A
V
F
Diode forward voltage
I
F
=600A
3.0
V
I
F
=600A,T
VJ
=125 C
3.1
V
C
ies
Input capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
132
nF
C
res
Reverse transfer capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
1.8
nF
L
M
Module inductance
--
15
nH
R
INT
Internal transistor resistance
135
SC
Data
Short circuit.I SC
T
j
125 C,V
CC
3000V,
I
1
2800
A
t
p
=
10 us,
I
2
V
CE(max)
=V
CES
L*.di/dt
IEC 60747-9
2500
A
Note:
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L
M
DIM600NSM45-F000
4/8
:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=600A
5.0
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=2250V
1500
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=4.7
R
G(OFF)
=11
850
ns
t
r
Rise time
C
ge
=110nF
220
ns
E
ON
Turn-on energy loss
L ~200nH
1800
mJ
Q
g
Gate charge
20
uC
Q
rr
Diode reverse recovery charge
I
F
=600A,V
CE
=2250V,
475
uC
I
rr
Diode reverse recovery current
dI
F
/dt =3000A/us
700
A
E
rec
Diode reverse recovery energy
600
mJ
T
case
= 125C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=600A
5.2
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=2250V
1700
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=4.7
R
G(OFF)
=11
800
ns
t
r
Rise time
C
ge
=110nF
220
ns
E
ON
Turn-on energy loss
L ~200nH
2700
mJ
Q
rr
Diode reverse recovery charge
I
F
=600A,V
CE
=2250V,
850
uC
I
rr
Diode reverse recovery current
dI
F
/dt =3000A/us
820
A
E
rec
Diode reverse recovery energy
1050
mJ
DIM600NSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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www.dynexsemi.com
0
200
400
600
800
1000
1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Collector-emitter voltage, Vce - (V)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
T
case
= 25 C
V
CE
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
0.0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 125 C
V
CE
is measured at power busbars
and not the auxiliary terminals
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
0
1000
2000
3000
0
200
400
600
Collector Current - Ic (A)
S
w
i
t
c
h
i
n
g
E
n
e
r
g
y
-
E
s
w
(
m
J
)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
V
CC
= 2250V
T
case
= 125 C
R
g
= 4.7Ohms
C
ge
=110nH
Vge =+/- 15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0
5
10
15
20
25
30
Gate Resistance - Rg (Ohms)
S
w
i
t
c
h
i
n
g
E
n
e
r
g
y
-
E
s
w
(
m
J
)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
VCC = 2250V
Ic = 600A
Tcase = 125 C
Cge =110nH
Vge = +/- 15V
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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