DIM250WKS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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KEY PARAMETERS
V
CES
600V
V
CE(sat)
*
(typ)
2.1V
I
C
(max) 250A
I
C(PK)
(max) 500A
*(measured at the power busbars and not the auxiliary terminals)
FEATURES
I
n - Channel
I
High Switching Speed
I
Low Forward Voltage Drop
I
Isolated Base
APPLICATIONS
I
Choppers
I
PWM Motor Contro
l
I
UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WKS06-S000 is a 600V n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
DIM250WKS06-S000
Note: When ordering, use complete part number.
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: W
(See package details for further information)
PDS5730-1.0 February 2004
DIM250WKS06-S000
IGBT Chopper Module (Upper Arm Control)
3(C1)
1(K,E)
2(A)
5(E
1
)
4(G
1
)
DIM250WKS06-S000
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 65C
1ms, T
case
= 95C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
kV
Max.
600
20
250
500
1157
TBD
2.5
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor arm
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
108
203
15
150
125
125
5
5
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
3
2.5
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Clearance: 13mm
Baseplate material: Cu
CTI (Critical Tracking Index): 175
Creepage distance: 24mm
DIM250WKS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
Note:
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 250A
V
GE
= 15V, I
C
= 250A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 250A
I
F
= 250A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Parameter
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance
Internal transistor resistance - per arm
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
Max.
1
10
1
7.5
2.6
2.8
250
500
1.8
1.8
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
27
20
0.23
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
DIM250WKS06-S000
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
20
330
130
12
2
15
185
4
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 250A
V
GE
=
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
650
500
30
400
160
18
23
200
5
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 250A
V
GE
=
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
DIM250WKS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
100
50
200
300
400
150
250
350
450
500
0
1.0
2.0
3.0
4.0
5.0
6.0
Common emitter
T
case
= 125C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
50
100
150
200
500
0
1
2.0
3
4
5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
450
250
300
350
400
Common emitter
T
case
= 25C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Fig.4 Typical switching energy vs collector current
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
250
300
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
Conditions:
T
case
= 125C
V
cc
= 300V
R
g
= 4.7 ohms
E
on
E
off
E
rec
Fig.5 Typical switching energy vs gate resistance
0
5
10
15
20
25
30
35
40
2
10
12
14
16
Gate Resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
4
6
8
E
off
E
on
E
rec
Conditions:
T
case
= 125C
V
cc
= 300V
I
C
= 250A
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