Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
10
s Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
Lead Free construction
APPLICATIONS
Matrix Converters
Brushless Motor Controllers
Frequency Converters
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM200WBS12-A000 is a bi-directional 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10
s short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WBS12-A000
Note: When ordering, please use the whole part number.
.
KEY PARAMETERS
V
CES
1200V
V
T
(typ)
4.3 V
I
C
(max)
200A
I
C(PK)
(max)
400A
Fig. 1 Half bridge circuit diagram
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
DIM200WBS12-A000
Single Switch IGBT
Module
DS5862-1.2 March 2006 (LN24533)
SEMICONDUCTOR
DIM200WBS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
= 0V
1200
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
= 80C
200
A
I
C(PK)
Peak collector current
1ms, T
case
=115C
400
A
P
max
Max. transistor power dissipation
T
case
= 25C, T
j
= 150C
1.435
kW
I
2
t
Diode I
2
t value (IGBT arm)
V
R
= 0, t
P
= 10ms, T
vj
= 125C
6.25
kA
2
S
V
isol
Isolation voltage per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
SEMICONDUCTOR
DIM200WBS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Al
2
O
3
Baseplate material:
Copper
Creepage distance:
24mm
Clearance:
13mm
CTI (Critical Tracking Index):
175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance - transistor
Continuous dissipation
junction to case
-
-
87
C/kW
R
th(j-c)
Thermal resistance - diode
Continuous dissipation
junction to case
-
-
194
C/kW
R
th(c-h)
Thermal resistance case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
15
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
-
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections M6
-
-
5
Nm
SEMICONDUCTOR
DIM200WBS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
GE
= 0V, V
CE
= V
CES
-
-
0.25
mA
I
ces
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
-
-
6
mA
I
ces
Gate leakage current
V
GE
= 20V, V
CE
= 0V
-
-
1
A
V
GE(TH)
Gate threshold voltage
I
C
= 10mA, V
GE
= V
CE
4.5
5.5
6.5
V
V
GE
= 15V, I
C
= 200A
-
2.2
2.6
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 200A, T
case
= 125C
-
2.6
3.0
V
V
GE
= 15V, I
C
= 200A
-
4.3
5.0
V
V
T
On-state voltage
(measured across terminals 1 &3)
V
GE
= 15V, I
C
= 200A, T
case
= 125C
-
4.7
5.4
V
I
F
Diode forward current
DC
-
-
200
A
I
FM
Diode maximum forward current
t
p
= 1ms
-
-
400
A
I
F
= 200A
-
2.1
2.4
V
V
F
Diode forward voltage
I
F
= 200A, T
case
= 125C
-
2.1
2.4
V
C
ies
Input capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
23
-
nF
L
M
Module inductance per arm
-
-
30
-
nH
R
INT
Internal resistance per arm
-
-
0.27
-
m
T
j
= 125C, V
cc
= 900V,
I
1
-
1375
-
A
t
p
10s,
V
CE(max)
= V
CES
- L*.di/dt
I
2
-
1125
-
A
SC
Data
Short circuit. I
sc
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + L
M
SEMICONDUCTOR
DIM200WBS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 200A
-
600
-
ns
t
f
Fall time
V
GE
= 15V
-
50
-
ns
E
OFF
Turn-off energy loss
V
CE
= 600V
-
20
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 4.7
-
240
-
ns
t
r
Rise time
L
100nH
-
95
-
ns
E
O
Turn-on energy loss
-
25
-
mJ
Q
g
Gate charge
-
2
-
C
Q
rr
Diode reverse recovery charge
I
F
= 200A, V
R
= 600V,
-
30
-
C
I
rr
Diode reverse current
dl
F
/dt = 2100A/s
-
125
-
A
E
REC
Diode reverse recovery energy
-
13
-
mJ
T
case
= 125C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 200A
-
800
-
ns
t
f
Fall time
V
GE
= 15V
-
70
-
ns
E
OFF
Turn-off energy loss
V
CE
= 600V
-
27
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 4.7
-
385
-
ns
t
r
Rise time
L
100nH
-
110
-
ns
E
ON
Turn-on energy loss
-
40
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 200A, V
R
= 600V,
-
50
-
C
I
rr
Diode reverse current
dl
F
/dt = 1900A/s
-
140
-
A
E
REC
Diode reverse recovery energy
-
20
-
mJ
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