ChipFind - документация

Электронный компонент: DFM1200NXM33

Скачать:  PDF   ZIP
1/7
www.dynexsemi.com
DFM1200NXM33-A000
FEATURES
s
Low Reverse Recovery Charge
s
High Switching Speed
s
Low Forward Voltage Drop
s
Isolated Base
s
Dual Diodes Can Be Paralleled for 2400A Rating
s
MMC Baseplate With AlN Substrates
APPLICATIONS
s
Brake Chopper Diode
s
Boost and Buck Converters
s
Free-wheel Circuits
s
Motor Drives
s
Resonant Converters
s
Induction Heating
s
Multi-level Switch Inverters
The DFM1200NXM33-A000 is a dual 3300 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM1200NXM33-A000
Note: When ordering, please use the complete part number.
DFM1200NXM33-A000
Fast Recovery Diode Module
Preliminary Information
DS5472-1.3 October 2001
KEY PARAMETERS
V
RRM
3300V
V
F
(typ)
2.5V
I
F
(max)
1200A
I
FM
(max)
2400A
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: N
(See package details for further information)
External connection for single 2400A diode application
C2(K2)
C1(K1)
E1(A1)
E2(A2)
External connection
External connection
C1
E1
C2
E2
DFM1200NXM33-A000
2/7
www.dynexsemi.com
Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 70C
T
case
= 115C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 2450V, V
2
= 1800V, 50Hz RMS
Max.
3300
1200
2400
720
5880
6
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
17
6
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
-
40
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
3/7
www.dynexsemi.com
DFM1200NXM33-A000
Test Conditions
V
R
= 3300V, T
vj
= 125C
I
F
= 1200A
I
F
= 1200A, T
vj
= 125C
-
Parameter
Peak reverse current
Forward voltage
Inductance
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
Symbol
I
RM
V
F
L
Units
mA
V
V
nH
Max.
90
-
-
-
Typ.
-
2.5
2.5
25
Min.
-
-
-
-
Test Conditions
I
F
= 1200A,
dI
F
/dt = 5600A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
1000
650
750
Min.
-
-
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
T
vj
= 125C unless stated otherwise.
Test Conditions
I
F
= 1200A,
dI
F
/dt = 4500A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
1050
1000
1250
Min.
-
-
-
DFM1200NXM33-A000
4/7
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 Power dissipation
Fig. 6 DC current rating vs case temperature
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25C
T
j
= 125C
0.1
1
10
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (

C/kW )
Diode R
i
(C/KW)
i
(ms)
1
0.4646
0.0843
2
2.46
3.7205
3
3.4987
33.2138
4
10.5854
236.5275
Diode
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
Power Dissipation - P
tot
(W)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
DC forward current - I
F
- (A)
5/7
www.dynexsemi.com
DFM1200NXM33-A000
Fig. 7 RBSOA
0
600
300
1200
1800
900
1500
2100
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C
DFM1200NXM33-A000
6/7
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
140
31.5
4x M8
5
38
20
43.5
18
57
57
65
65
6x 7
62
20
62
20
C1
E1
C2
E2
Nominal weight: 1000g
Module outline type code: N
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.