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Электронный компонент: DFM1200EXM12

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DFM1200EXM12-A000
FEATURES
s
Low Reverse Recovery Charge
s
High Switching Speed
s
Low Forward Voltage Drop
s
Isolated Base
s
Dual Diodes Can Be Paralleled for 3600A Rating
s
MMC Baseplate With AlN Substrates
APPLICATIONS
s
Chopper Diodes
s
Boost and Buck Converters
s
Free-wheel Circuits
s
Snubber Circuits
s
Resonant Converters
s
Induction Heating
s
Multi-level Switch Inverters
The DFM1200EXM12-A000 is a triple 1200 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM1200FXM12-A000
Note: When ordering, please use the complete part number.
DFM1200EXM12-A000
Fast Recovery Diode Module
Preliminary Information
DS5481-1.2 July 2001
KEY PARAMETERS
V
RRM
1200V
V
F
(typ)
1.9V
I
F
(max)
1200A
I
FM
(max)
2400A
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: E
(See package details for further information)
External connection for single 3600A diode application
3(C3)
1(C1)
4(A1)
6(A3)
External connection
External connection
2(C2)
5(A2)
1
2
3
4
5
6
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Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 75C
T
case
= 110C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1200V, V
2
= 900V, 50Hz RMS
Max.
1200
1200
2400
200
7520
4
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
13.3
6
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
-
40
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
32mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
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DFM1200EXM12-A000
Test Conditions
V
R
= 1200V, T
vj
= 125C
I
F
= 1200A
I
F
= 1200A, T
vj
= 125C
-
Parameter
Peak reverse current
Forward voltage
Inductance
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
Symbol
I
RM
V
F
L
Units
mA
V
V
nH
Max.
20
2.2
2.4
-
Typ.
-
1.9
2.1
TBD
Min.
-
-
-
-
STATIC ELECTRICAL CHARACTERISTICS
T
vj
= 25C unless stated otherwise.
Test Conditions
-
Parameter
Module inductance
(externally connected in parallel)
Symbol
L
M
Units
nH
Max.
-
Typ.
15
Min.
-
Test Conditions
I
F
= 1200A,
dI
F
/dt = 9000A/
s,
V
R
= 600V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
800
200
80
Min.
-
-
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
T
vj
= 125C unless stated otherwise.
Test Conditions
I
F
= 1200A,
dI
F
/dt = 8400A/
s,
V
R
= 600V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
920
300
140
Min.
-
-
-
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TYPICAL CHARACTERISTICS
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 125C
T
j
= 25C
0.1
10
1
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (

C/kW )
Diode
Diode R
i
(C/KW)
i
(ms)
1
0.1952
0.045
2
1.4194
2.889
3
1.8429
21.7141
4
4.5492
152.6381
0
2000
4000
6000
8000
1000
3000
5000
7000
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
Power dissipation, P
tot
- (W)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
DC forward current, I
F
- (A)
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DFM1200EXM12-A000
Fig. 7 RBSOA
0
200
1400
400
1000
600
1200
800
0
200
400
600
800
1200
1000
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C