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FEATURES
Double Side Cooling
High Surge Capability
APPLICATIONS
Medium Voltage Soft Starts
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
Conditions
DCR810F85
DCR810F80
DCR810F75
DCR810F70
8500
8000
7500
7000
T
vj
= -40C to 125C,
I
DRM
= I
RRM
= 200mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR810F85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
V
DRM
8500V
I
T(AV)
810A
I
TSM
12800A
dV/dt*
1500V/s
dI/dt
200A/s
* Higher dV/dt selections available
Outline type code: F
(See Package Details for further information)
Fig. 1 Package outline
DCR810F85
Phase Control Thyristor
Preliminary Information
DS5877-1.0 JAN 2006 (LN24408)
SEMICONDUCTOR
DCR810F85
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CURRENT RATINGS
T
case
= 60C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
Double Side Cooled
I
T(AV)
Mean on-state current
Half wave resistive load
810
A
I
T(RMS)
RMS value
-
1270
A
I
T
Continuous (direct) on-state current
-
1275
A
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
I
TSM
Surge (non-repetitive) on-state current
10ms half sine, T
case
= 125C
12.8
kA
I
2
t
I
2
t for fusing
V
R
= 0
0.82
MA
2
s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
R
th(j-c)
Thermal resistance junction to case
Double side cooled
DC
-
0.0171
C/W
Single side cooled
Anode DC
-
0.0313
C/W
Cathode DC
-
0.0378
C/W
R
th(c-h)
Thermal resistance case to heatsink
Clamping force 23 kN
Double side
-
0.004
C/W
(with mounting compound)
Single side
-
0.008
C/W
T
vj
Virtual junction temperature
On-state (conducting)
-
135
C
Reverse (blocking)
-
125
C
T
stg
Storage temperature range
-55
125
C
F
m
Clamping force
20.0
25.0
kN
SEMICONDUCTOR
DCR810F85
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DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125C
-
200
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% V
DRM
, T
j
= 125C, gate open
-
1500
V/s
dI/dt
Rate of rise of on-state current
From 67% V
DRM
to 2x I
T(AV)
Repetitive 50Hz
-
100
A/s
Gate source 30V, 10
,
Non-repetitive
-
200
A/s
t
r
< 0.5s, T
j
= 125C
V
T(TO)
Threshold voltage Low level
100A to 500A at T
case
= 125C
-
1.081
V
Threshold voltage High level
500A to 3000A at T
case
= 125C
-
1.243
V
r
T
On-state slope resistance Low level
100A to 500A at T
case
= 125C
-
1.694
m
On-state slope resistance High level
500A to 3000A at T
case
= 125C
-
1.342
m
t
gd
Delay time
V
D
= 67% V
DRM
, gate source 30V, 10
TBD
TBD
s
t
r
= 0.5s, T
j
= 25C
t
q
Turn-off time
T
j
= 125C, V
R
= 200V, dI/dt = 1A/s,
1000
1600
s
dV
DR
/dt = 20V/s linear
Q
S
Stored charge
I
T
= 2000A, T
j
= 125C, dI/dt 1A/s,
V
Rpeak
= 60% V
drm
, V
R
= 40% V
drm
3400
5600
C
I
L
Latching current
T
j
= 25C, V
D
= 5V
TBD
TBD
mA
I
H
Holding current
T
j
= 25C, R
G-K
=
, I
TM
= 500A, I
T
= 5A
TBD
TBD
mA
SEMICONDUCTOR
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25C
1.5
V
V
GD
Gate non-trigger voltage
At V
DRM,
T
case
= 125C
TBD
V
I
GT
Gate trigger current
V
DRM
= 5V, T
case
= 25C
250
mA
I
GD
Gate non-trigger current
V
DRM
= 5V, T
case
= 25C
TBD
mA
CURVES
0
1000
2000
3000
0.0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage V
T
- (V)
I
n
s
t
a
n
t
a
n
e
o
u
s
o
n
-
s
t
a
t
e
c
u
r
r
e
n
t
I
T
-
(
A
)
25C min
25C max
125C min
125C max
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
Where
A = 0.882859
B = 0.020109
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
C = 0.001177
D = 0.012682
these values are valid for T
j
= 125C for I
T
100A to 3000A
SEMICONDUCTOR
DCR810F85
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0
2
4
6
8
10
12
14
16
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
M
e
a
n
p
o
w
e
r
d
i
s
s
i
p
a
t
i
o
n
-
(
k
W
)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
200
400
600
800
1000
1200
Mean on-state current, I
T(AV)
- (A)
M
a
x
i
m
u
m
c
a
s
e
t
e
m
p
e
r
a
t
u
r
e
,
T
ca
se
(
o
C
)
180
120
90
60
30
Fig.3 On-state power dissipation sine wave
Fig.4 Maximum permissible case temperature,
double side cooled sine wave
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
200
400
600
800
1000
1200
Mean on-state current, I
T(AV)
- (A)
M
a
x
i
m
u
m
h
e
a
t
s
i
n
k
t
e
m
p
e
r
a
t
u
r
e
,
T
H
e
a
t
si
n
k
-
(
o
C
)
180
120
90
60
30
0
1
2
3
4
5
6
7
8
9
10
11
12
0
500
1000
1500
2000
2500
Mean on-state current, I
T(AV)
- (A)
M
e
a
n
p
o
w
e
r
d
i
s
s
i
p
a
t
i
o
n
-
(
k
W
)
d.c.
180
120
90
60
30
Fig.5 Maximum permissible heatsink temperature,
double side cooled sine wave
Fig.6 On-state power dissipation rectangular wave
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