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XXXXXX
AC2001
Millimeter Wave gunn Oscillator Module
Dynex Semiconductor has developed a low cost, state of
the art Millimetre Wave Gunn diode based oscillator
module that operates in the 75 to 80 GHz band, with a 1
GHz operational bandwidth.
The initial application of the oscillator is within an
automotive product.
The use of Gunn technology provides performance
advantages compared to competing technologies.
Figure 1 Millimeter Wave Gunn Oscillator Module
Features
l
High output power
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Low phase noise performance
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Frequency stability with temperature
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Frequency agility
DS5074-3.0 January 2000
Applications
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A low noise source for research use
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Autonomous Intelligent Cruise Control systems
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FMCW and Doppler radar systems
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Voltage controlled oscillator
The Gunn diode is a custom MBE grown GaAs
hetrojunction device incorporated into a machined alloy
body with an integral custom waveguide 26 flange. The
oscillator is a radial mode 2nd harmonic bias tuned
design.
For microstrip applications a waveguide to 0.18mm
microstrip step transition is available to interface the
oscillator to microstrip circuits.
A separate power supply driver PCB can be provided to
interface to the Gunn module. This provides over voltage,
spike and reverse polarity protection. The driver PCB
also allows ease of frequency setting or the application of
modulation.
It should be noted that the Gunn diode is easily damaged
by voltage transients or reverse bias. It is recommended
that the driver circuitry is always used to protect the Gunn
diode from potential damage.
It is possible to extend the lower operational temperature
range of the oscillator by applying a small DC voltage to
the oscillator. This voltage is insufficient to generate any
RF power.
The required frequency range must be specified when
ordering the parts.
Specification
Potential operating frequency range
75 - 80 GHz
Microwave Output power (@25
C)
+16 dBm min.
SSB Phase Noise (100kHz offset)
-85 dBc/Hz typ.
Operating voltage range
5.0 - 6.5 V
Supply current
750 mA typ.
D
P/
D
T (max.)
0.35 mW/
C
D
F/
D
T (typ.)
1 - 2 MHz/
C
Voltage pushing
400 - 800 MHz/V
Operational temperature range
-30
C to +85
C
Weight (Oscillator only)
25 g approx.
Frequency adjustment or modulation of the oscillator is
achieved by changing the oscillator bias supply via the
driver PCB. The driver PCB provides a control voltage
input for this purpose. The voltage limits must be within
those specified
Replaces March 1999, version DS5074-2.0
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Dynex Semiconductor 2002
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