FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
75
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 200C
Junction Operating Temperature
-55 to 200C
Maximum Power Dissipation
Continuous Power Dissipation
500mW
Maximum Currents
Gate Current
-50mA
Maximum Voltages
Gate to Drain
30V
Gate to Source
30V
STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
BV
GSS
Gate
to
Source
Breakdown
Voltage
30 30 30
I
G
= 1A, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
5
10
3
6
1
4
V
DS
= -15V, I
D
= -1nA
V
GS(F)
Gate to Source Forward Voltage -0.7 -1 -1 -1
I
G
= -1mA, V
DS
= 0V
-1.0 -1.3
V
GS
= 0V, I
D
= -15mA
-0.7 -0.8
V
GS
= 0V, I
D
= -7mA
V
DS(on)
Drain to Source On Voltage
-0.5
-0.6
V
V
GS
= 0V, I
D
= -3mA
-30
-90
V
DS
= -18V, V
GS
= 0V
I
DSS
Drain to Source Saturation Current
2
-15
-60
-5
-25
mA
V
DS
= -15V, V
GS
= 0V
I
GSS
Gate
Leakage
Current
5 500 500 500
V
GS
= 20V, V
DS
= 0V
I
G
Gate
Operating
Current
-5
V
DG
= -15V, I
D
= -1mA
-10
-500
V
DS
= -15V, V
GS
= 12V
-10
-500
V
DS
= -15V, V
GS
= 7V
I
D(off)
Drain Cutoff Current
-10
-500
pA
V
DS
= -15V, V
GS
= 5V
r
DS(on)
Drain to Source On Resistance
75
100
150
V
GS
= 0V, I
D
= -1mA
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
2N5114
2N5115
2N5116
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
g
fs
Forward
Transconductance
4.5
mS
g
os
Output
Conductance
20
S
V
DS
= -15V, I
D
= -1mA
f = 1kHz
r
ds(on)
Drain to Source On Resistance
75
100
150
V
GS
= 0V, I
D
= 0mA
f = 1kHz
C
iss
Input
Capacitance
20 25 25 25
V
DS
= -15V, V
GS
= 0V
f = 1MHz
5 7
V
DS
= 0V, V
GS
= 12V
f = 1MHz
6 7
V
DS
= 0V, V
GS
= 7V
f = 1MHz
C
rss
Reverse Transfer Capacitance
6
7
pF
V
DS
= 0V, V
GS
= 5V
f = 1MHz
e
n
Equivalent
Noise
Voltage
20
nV/Hz
V
DG
= 10V, I
D
= 10mA
f = 1 kHz
SWITCHING CHARACTERISTICS (max)
SYM. CHARACTERISTIC 2N5114 2N5115 2N5116
UNITS
t
d(on)
6
10
12
t
r
Turn On Time
10 20 30
t
d(off)
6
8
10
t
f
Turn Off Time
15 30 50
ns
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
2N5114
2N5115
2N5116
V
DD
-10V -6V -6V
V
GG
20V 12V 8V
R
L
430 910 2k
R
G
100 220 390
I
D(on)
-15mA -7mA -3mA
V
GS(H)
0V 0V 0V
V
GS(L)
-11V -7V
-5V
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
n or
R
G
0.1F
51
R
L
Sampling
Scope
1.2k
7.5k
51
51
1.2k
V
GS(H)
V
GS(L)
TO-18
Three Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
3 LEADS
2
1
3
0.046
0.036
45
0.048
0.028
0.100
0.050
SWITCHING TEST CIRCUIT
V
GG
V
DD
NOTES
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Pulse test: PW 300s, Duty Cycle 3%
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use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
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