GM71C4403C
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Description
The GM71C4403C is the new generation dynamic
RAM organized 1,048,576 words x 4 bit.
GM71C4403C has realized higher density, higher
performance and various functions by utilizing
advanced CMOS process technology. The
GM71C4403C offers Extended Data Out (EDO)
Mode as a high speed access Mode. Multiplexed
address inputs permit the GM71C4403C to be
packaged in a standard 300mil 20(26) pin plastic
SOJ , and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
Features
* 1,048,576 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
*1024 Refresh Cycles/16ms
1
Pin Configuration
LG Semicon Co.,Ltd.
1
2
3
4
5
16
17
18
19
20
6
7
8
9
10
11
12
13
14
15
1
2
3
4
5
16
17
18
19
20
6
7
8
9
10
11
12
13
14
15
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
20 (26) TSOP II
(Top View)
1
2
3
4
5
16
17
18
19
20
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
6
7
8
9
10
11
12
13
14
15
V
SS
I/O4
I/O3
CAS
OE
A8
A7
A6
A5
A4
20 (26) SOJ
(Top View)
NORMAL TYPE
REVERSE TYPE
GM71C4403C-60
GM71C4403C-70
GM71C4403C-80
t
RAC
t
CAC
t
RC
t
HPC
60
70
80
15
18
20
104
124
144
25
30
35
(Unit: ns)
LG Semicon
GM71C4403C
2
Pin Description
Pin
Function
Pin
Function
A0-A9
A0-A9
I/O1-I/O4
RAS
CAS
WE
OE
V
CC
V
SS
Address Inputs
Refresh Address Inputs
Data Input / Data Output
Row Address Strobe
Column Address Strobe
Read/Write Enable
Output Enable
Power (+5V)
Ground
Ordering Information
Type No.
Access Time
Package
GM71C4403CJ-60
GM71C4403CJ-70
GM71C4403CJ-80
300 Mil, 20 (26) Pin
Plastic SOJ
Absolute Maximum Ratings*
Symbol
Parameter
Rating
Unit
T
A
T
STG
V
IN
/V
OUT
V
CC
I
OUT
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Voltage on V
CC
Relative to V
SS
Short Circuit Output Current
C
C
V
V
mA
P
D
1.0
Power Dissipation
W
*Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions (All Voltage referenced to Vss, T
A
= 0 ~ 70C)
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
5.5
6.5
0.8
Typ
5.0
-
-
Min
4.5
2.4
-1.0
60ns
70ns
80ns
300 Mil, 20 (26) Pin
Plastic TSOP II
(Normal Type)
GM71C4403CT-60
GM71C4403CT-70
GM71C4403CT-80
300 Mil, 20 (26) Pin
Plastic TSOP II
(Reverse Type)
GM71C4403CR-60
GM71C4403CR-70
GM71C4403CR-80
60ns
70ns
80ns
60ns
70ns
80ns
LG Semicon
GM71C4403C
3
DC Electrical Characteristics (V
CC
= 5V+/-10%, T
A
= 0 ~ 70C)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output "H" Level Voltage (I
OUT
= -5mA)
Unit
V
V
Max
V
CC
0.4
Min
2.4
0
Output Level
Output "L" Level Voltage (I
OUT
= 4.2mA)
I
CC1
mA
110
-
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
60ns
70ns
80ns
100
90
-
-
1, 2
I
CC2
mA
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS= V
IH
, D
OUT
= High-Z)
2
-
I
CC3
mA
2
I
CC4
mA
1, 3
110
-
60ns
70ns
80ns
100
90
-
-
130
-
60ns
70ns
80ns
120
110
-
-
I
CC5
mA
1
-
I
CC6
mA
CAS-before-RAS Refresh Current
(t
RC
= t
RC
min)
110
-
60ns
70ns
80ns
100
90
-
-
I
CC8
mA
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
= Enable
5
-
1
I
I(L)
uA
10
-10
I
O(L)
uA
10
-10
Input Leakage Current
Any Input (0V<=V
IN
<=7V)
Output Leakage Current
(D
OUT
is Disabled, 0V<=V
OUT
<=7V)
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min)
Extended Data Out Page Mode Current
Average Power Supply Current
Extended Data Out Mode
(RAS = V
IL
, CAS, Address Cycling: t
HPC
= t
HPC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS= V
IH
, WE, OE, Address and D
IN
=V
IH
or V
IL
,
D
OUT
=High-Z)
LG Semicon
GM71C4403C
4
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
Random Read or Write Cycle Time
104
-
124
-
144
-
ns
t
RP
RAS Precharge Time
40
-
50
-
60
-
ns
t
RAS
RAS Pulse Width
60
10,000
70
10,000
80
10,000
ns
t
CAS
CAS Pulse Width
10
10,000
10,000
10,000
ns
13
15
t
ASR
Row Address Set-up Time
0
-
-
-
ns
0
0
t
RAH
Row Address Hold Time
10
-
-
-
ns
10
t
ASC
Column Address Set-up Time
0
-
-
-
ns
0
0
t
CAH
Column Address Hold Time
10
-
-
-
ns
13
15
t
RCD
RAS to CAS Delay Time
20
45
52
60
ns
20
20
8
t
RAD
RAS to Column Address Delay Time
15
30
35
40
ns
15
15
9
t
RSH
RAS Hold Time
15
-
-
-
ns
18
20
t
CSH
CAS Hold Time
48
-
-
-
ns
58
68
t
CRP
CAS to RAS Precharge Time
10
-
-
-
ns
10
10
t
T
Transition Time (Rise and Fall)
2
50
50
50
ns
2
2
7
t
REF
Refresh Period
-
16
16
16
ms
-
-
Capacitance (V
CC
= 5V+/-10%, T
A
= 25C)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
Input Capacitance (Address)
Input Capacitance (Clocks)
Data Input/Output Capacitance (Data-In/Out)
1
1
1, 2
Unit
Max
5
7
7
Min
-
-
-
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics (V
CC
= 5V+/-10%, T
A
= 0 ~ 70C, Notes 1, 14, 15, 16)
t
ODD
OE to D
IN
Delay Time
15
-
-
-
ns
18
20
t
DZO
OE Delay Time from D
IN
0
-
-
-
ns
0
0
t
DZC
CAS Set-up Time from D
IN
0
-
-
-
ns
0
0
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
Test Conditions
Input level : V
IL
=0V, V
IH
=3.0V
Input rise and fall times: 2ns
Input timing reference levels: V
IL
=0.8V, V
IH
=2.4V
Output timing reference levels: V
OL
=0.8V, V
OH
=2.0V
Output load : 1 TTL gate + C
L
(100)
(Including scope and jig)
10
19
20
22
LG Semicon
GM71C4403C
5
Read Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RAC
Access Time from RAS
-
60
-
70
-
80
ns
t
CAC
Access Time from CAS
-
15
-
18
-
20
ns
t
AA
Access Time from Address
-
30
-
35
-
40
ns
t
RCS
Read Command Setup Time
0
-
0
-
0
-
ns
t
RCH
Read Command Hold Time to CAS
0
-
-
-
ns
0
0
t
RRH
Read Command Hold Time to RAS
0
-
-
-
ns
0
0
t
RAL
Column Address to RAS Lead Time
30
-
-
-
ns
35
40
2,3,17
3, 4, 13,
17
t
OFF
Output Buffer Turn-off Time
15
15
15
ns
6,21
t
OAC
Access Time from OE
-
15
-
18
-
20
ns
3,17
t
OEZ
Output Buffer Turn-off Time to OE
15
15
15
ns
6
t
CDD
CAS to D
IN
Delay Time
-
-
-
ns
15
18
20
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
t
OEP
OE Pulse width
-
-
-
ns
15
18
20
t
CAL
Column Address to CAS Lead Time
18
-
-
-
ns
23
28
t
RDD
RAS to D
IN
Delay Time
-
-
-
ns
15
18
20
t
WDD
WE to D
IN
Delay Time
-
-
-
ns
15
18
20
t
OFR
Output Buffer Turn-off Time to RAS
15
15
-
ns
6,21
t
WEZ
Output Buffer Turn-off Time to WE
15
15
-
15
15
ns
6
t
OH
Output Data Hold Time
5
-
5
-
5
-
ns
t
OHR
Output Data Hold Time form RAS
5
-
5
-
5
-
ns
t
RCHR
Read Command Hold Time from
RAS
60
-
70
-
80
-
ns
3, 5, 13,
17
18
18
-
-
-
-
-
-
-
-
-
-
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