- 1-
E L - 3 1 3
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
Peak emission wavelength
Radiant intensity
* 3
Half angle
The EL-313 is a high-power GaAs IRED mounted in a
clear side-viewing package. This IRED is both
compact and easy to mount.
F E A T U R E S
Compact plastic mold type
A P P L I C A T I O N S
Optical switches
Transmission sensors
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Power dissipation
Pulse forward current
* 1
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
P
D
I
F P
T o p r .
T s t g .
T s o l .
4
5 0
1 0 0
1
2 08 5
3 08 5
2 4 0
V
m A
m W
A
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 3 0 m A
V
R
= 4 V
I
F
= 2 0 m A
I
F
= 3 0 m A
I t e m
T y p .
1 . 2
9 4 0
2 . 0
2 0
V
F
I
R
p
P
O
1 . 5
1 0
V
A
n m
m W
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c
*2. For MAX.5 seconds at the position of 2 mm from the package
*3. Exclusive P
T r
is used as detector
- 2-
E L - 3 1 3
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
PDF 
ZIP