- 1-
A L - 4 0 2
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Effective emitting diameter
The AL-402 is a high-power GaAlAs IRED, with
precision optical designed attachment lens. It emits
parallel infrared lights.
F E A T U R E S
Parallel rays
Low profile
sidelooking plastic package
A P P L I C A T I O N S
E n c o d e r s
Emitters for automatic focusing
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 1
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
1 0 0
0 . 3
1 5 0
- 2 5 ~ + 7 0
- 3 0 ~ + 8 0
2 4 0
V
m A
A
m W
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 5 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 5 0 m A
I
F
= 5 0 m A
I
F
= 5 0 m A
I t e m
T y p .
1 . 4
2 0
2 . 2
9 1 0
5 0
3 . 9
V
F
I
R
C t
P
O
p
D
2 . 0
1 0
1 2
V
A
p F
m W / s r
n m
n m
d e g .
m m
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. For MAX.5 seconds at the position of 2 mm from the package
- 2-
A L - 4 0 2
Infrared Emitting Diodes(GaAlAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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