IMAGE SENSOR SOLUTIONS

IMING DIAGRAMS

..........................................13

TABLE OF CONTENTS

DEVICE DESCRIPTION ....................................4

ARCHITECTURE...............................................4

ICRO LENSES

................................................4

IMAGE ACQUISITION .......................................5

CHARGE TRANSPORT ....................................5

OUTPUT STRUCTURE .....................................5

DARK REFERENCE PIXELS ............................5

DUMMY PIXELS................................................5

PHYSICAL DESCRIPTION................................6

ESCRIPTION

............................................6

PERFORMANCE ...............................................7

LECTRO

PTICAL

PECIFICATIONS

..................7

PECTRAL

ESPONSE

......................................8

OSMETIC

PECIFICATION

................................9

Cosmetic Definitions..................................9

OPERATION....................................................10

BSOLUTE

AXIMUM

ATINGS

.......................10

DC O

PERATING

ONDITIONS

..........................11

AC O

PERATING

ONDITION

............................12

AC T

IMING

ONDITIONS

.................................12

PHYSICAL DESCRIPTION..............................16

ACKAGE

RAWING

.......................................16

QUALITY ASSURANCE AND RELIABILITY ...14

ORDERING INFORMATION ...........................15

VAILABLE

ART

ONFIGURATIONS

................15

REVISION CHANGES ....................................16

TABLE OF FIGURES

IGURE

1 F

UNCTIONAL BLOCK DIAGRAM

....... 4

IGURE

3 O

UTPUT SCHEMATIC

..................... 5

IGURE

4 P

ACKAGE PIN DESIGNATION

.......... 6

IGURE

5 S

PECTRAL RESPONSE

................... 8

IGURE

6 E

XAMPLE

UTPUT

TRUCTURE

OAD

IAGRAM

.................................. 11

IGURE

7 T

IMING DIAGRAMS

....................... 13

IGURE

8 P

ACKAGE DIMENSIONS

................ 16

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IMAGE SENSOR SOLUTIONS

S U M M A R Y S P E C I F I C A T I O N

KODAK KAF-0402E/ME Image

Sensor 768 (H) x 512 (V) Enhanced

Response Full-Frame CCD

Parameter Value

Architecture

Full-Frame CCD; Enhanced

Response

Total Number of Pixels

784 (H) x 520 (V)

Number of Active Pixels

768 (H) x 512 (V) = approx.

0.4M

Pixel Size

9.0

�

m (H) x 9.,0

�

m (V)

Imager Size

6.91(H)mm x 4.6(V)mm

Die Size

8.4mm (H) x 5.5mm (V)

Aspect Ratio

3:2

Saturation Signal

100,000 electrons

Quantum Efficiency

Peak with Microlens: 77%

Peak without Microlens: 65%

400 nm with Microlens: 45%

400nm without Microlens: 30%

Output Sensitivity

�

V/e

Read Noise

15 electrons

Dark Current

<10pA/cm

@ 25

�

Dark Current Doubling
Temperature

6.3

�

Dynamic Range

76 dB

Charge Transfer
Efficiency

>0.99999

Blooming Suppression

None

Maximum Data Rate

10 MHz

Description

The KAF-0402E/ME is a high performance
monochrome area CCD (charge-coupled device)
image sensor with 768H x 512V photoactive pixels.
It is designed for a wide range of image sensing
applications in the 350 nm to 1000 nm wavelength
band. Typical applications include military, scientific,
and industrial imaging. Low dark current and good
charge capacity result in 76 dB dynamic range at
room temperature.

The sensor is built with a true two-phase CCD
technology employing a transparent gate. This
technology simplifies the support circuits that drive
the sensor, reduces the dark current without
compromising charge capacity, and significantly
increases to optical response compared to
traditional front illuminated full frame sensors.

The ME configuration adds micro lenses to the
surface of the CCD sensor. These lenses focus the
majority of the light through the transparent gate,
increasing the optical response further.

The photoactive area is 6.91mm x 4.6 mm. The
imager is housed in a 24 -pin, 0.805" wide, dual in
line package with 0.100" pin spacing.

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IMAGE SENSOR SOLUTIONS

KAF - 0402E/ME

DEVICE DESCRIPTION
Architecture

Usable Active Image

768(H) x 512(V)
9 x 9 um pixels

3:2 aspect ratio

768 Active Pixels/Line

4 Dark

10 Inactive

Vrd

Vdd
Vout
Vss

Sub

Vog

Guard

2 Inactive

12 Dark

4 Dark lines

Figure 1 Functional block diagram

The sensor consists of 784 parallel (vertical) CCD
shift registers each 520 elements long. These
registers act as both the photosensitive elements
and as the transport circuits that allow the image
to be sequentially read out of the sensor. The
parallel (vertical) CCD registers transfer the image
one line at a time into a single 796-element
(horizontal) CCD shift register. The horizontal
register transfers the charge to a single output
amplifier. The output amplifier is a two-stage
source follower that converts the photo-generated
charge to a voltage for each pixel.

Micro lenses

Micro lenses are formed along each row. They are
effectively half of a cylinder centered on the
transparent gates, extending continuously in the
row direction. They act to direct the photons away
from the polysilicon gate and through the
transparent gate. This increases the response,
especially at the shorter wavelengths (< 600 nm).

Micro lens

V1 electrode V2 electrode

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Silicon

IMAGE SENSOR SOLUTIONS

Image Acquisition

An electronic representation of an image is formed
when incident photons falling on the sensor plane
create electron-hole pairs within the sensor. These
photon induced electrons are collected locally by
the formation of potential wells at each photogate
or pixel site. The number of electrons collected is
linearly dependent on light level and exposure
time and non-linearly dependent on wavelength.
When the pixel's capacity is reached, excess
electrons will leak into the adjacent pixels within
the same column. This is termed blooming.

During the integration period, the

V1 and

Charge Transport

Referring again to "Figure 7 Timing diagrams", the
integrated charge from each photogate is
transported to the output using a two-step
process. Each line (row) of charge is first
transported from the vertical CCD to the horizontal
CCD register using the

V1 and

V2 register

clocks. The horizontal CCD is presented a new
line on the falling edge of

V2 while

H1 is held

high. The horizontal CCD then transports each
line, pixel by pixel, to the output structure by
alternately clocking the

H1 and

H2 pins in a

complementary fashion. On each falling edge of

H2 a new charge packet is transferred onto a

floating diffusion and sensed by the output
amplifier.

Output Structure

Charge presented to the floating diffusion is
converted into a voltage and current amplified in
order to drive off-chip loads. The resulting voltage
change seen at the output is linearly related to the
amount of charge placed on the floating diffusion.
Once the signal has been sampled by the system
electronics, the reset gate (

R) is clocked to

remove the signal and the floating diffusion is
reset to the potential applied by Vrd. (see Figure 3
Output schematic ). More signal at the floating
diffusion reduces the voltage seen at the output
pin. In order to activate the output structure, an off-
chip load must be added to the Vout pin of the
device such as shown in Fig 4.

Dark Reference Pixels

There are 4 light shielded pixels at the beginning
of each line, and 12 at the end. There are 4 dark
lines at the start of every frame and 4 dark lines at

the end of each frame. Under normal
circumstances, these pixels do not respond to
light. However, dark reference pixels in close
proximity to an active pixel can scavenge signal
depending on light intensity and wavelength and
therefore will not represent the true dark signal.

Dummy Pixels

Within the horizontal shift register are 10 leading
additional pixels that are not associated with a
column of pixels within the vertical register. These
pixels contain only horizontal shift register dark
current signal and do not respond to light. A few
leading dummy pixels may scavenge false signal
depending on operating conditions. There are two
more dummy pixels at the end of each line.

Floating
Diffusion

HCCD
Charge
Transfer

Source
Follower
#1

Source
Follower
#2

Vrd

Vog

VDD

Vout

Figure 3 Output schematic

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IMAGE SENSOR SOLUTIONS

Physical Description

Pin Description

Pin Symbol Description

VOG

Output Gate

N/C

No connection (open pin)

VOUT

Video Output

11,14

VSUB

Substrate (Ground)

VDD

Amplifier Supply

15, 16,
21,22

Vertical CCD Clock - Phase 1

VRD

Reset Drain

17, 18,
19,20

Vertical CCD Clock - Phase 2

Reset Clock

Guard

Guard Ring

VSS

Amplifier Supply Return

N/C

No Connection (open pin)

Horizontal CCD Clock -
Phase 1

Horizontal CCD Clock -
Phase 2

9, 10,
12

N/C

No connection (open pin)

Pin 1

Pixel 1,1

Guard

Vsub

VOG

Vout

VDD

VRD

VSS

N/C

Vsub

N/C

Figure 4 Package pin designation

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IMAGE SENSOR SOLUTIONS

Performance

Electro Optical Specifications

All values measured at 25

�

C, and nominal operating conditions. These parameters exclude defective pixels.

Description

Symbol

Min

Nom

Max

Unit

Notes

Saturation Signal
Vertical CCD capacity
Horizontal CCD capacity
Output Node capacity

Nsat

85000

170000
190000

100000
200000
220000

240000

electrons / pixel

Quantum Efficiency
(see

Figure 5 Spectral

response

)

Photoresponse Non-
Linearity

PRNL

1.0

2.0

Photoresponse Non-
Uniformity

PRNU

0.8

Dark Signal

Jdark

30
10

electrons / pixel / sec

pA/cm2

Dark Signal Doubling
Temperature

6.3

Dark Signal Non-Uniformity

DSNU

electrons / pixel / sec

Dynamic Range

Charge Transfer Efficiency

CTE

0.99997

0.99999

Output Amplifier DC Offset

Vodc

Vrd

Vrd + 0.5

Vrd + 1.0

Output Amplifier Sensitivity

Vout/Ne~

uV/e~

Output Amplifier output
Impedance

Zout

180

200

220

Ohms

Noise Floor

ne~

electrons

Notes:

For pixel binning applications, electron capacity up to 330000 can be achieved with modified CCD inputs.

Each sensor may have to be optimized individually for these applications. Some performance parameters
may be compromised to achieve the largest signals.

Worst case deviation from straight line fit, between 2% and 90% of Vsat.

One Sigma deviation of a 128x128 sample when CCD illuminated uniformly at half of saturation.

Average of all pixels with no illumination at 25

C..

Average dark signal of any of 11 x 8 blocks within the sensor (each block is 128 x 128 pixels).

20log (Nsat / ne~) at nominal operating frequency and 25

Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises.
It is dominated by the output amplifier power spectrum with a bandwidth = 5 * pixel rate.

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IMAGE SENSOR SOLUTIONS

Cosmetic Specification

Defect tests performed at T=25

Grade Point Defects Cluster Defects

Column

<10

768,512

1,1

768,1

1,512

Cosmetic Definitions

Point Defect

DARK: A pixel which deviates by more than 6% from neighboring pixels
when illuminated to 70% of saturation, OR

BRIGHT: A Pixel with dark current > 5000 e/pixel/sec at 25C.

Cluster Defect

A grouping of not more than 5 adjacent point defects.

Column Defect

1) A grouping of >5 contiguous point defects along a single column.
2) A column containing a pixel with dark current > 12,000e/pixel/sec
(bright column).

3) A column that does not meet the minimum vertical CCD
charge capacity (low charge capacity column).
4) A column which loses more than 250 e under 2Ke illumination
(trap defect).

Neighboring pixels

The surrounding 128 x 128 pixels or

�

64 columns/rows.

Defect Separation

Column and cluster defects are separated by no less than two
(2) pixels in any direction (excluding single pixel defects).

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IMAGE SENSOR SOLUTIONS

Operation

Absolute Maximum Ratings

Description Symbol

Min

Max

Unit

Notes

Diode Pin Voltages

Vdiode

1,2

Gate Pin Voltages

Vgate1

-16

1,3,6

Output Bias Current

Iout

-10

Output Load Capacitance

Cload

Storage Temperature

100

Humidity

Notes:

1. Referenced to pin Vsub or between each pin in this group.

2. Includes pins: Vrd, Vdd, Vss, Vout.

Includes pins:

V1,

V2,

H1,

H2, Vog, Vlg.

Avoid shorting output pins to ground or any low impedance source during operation.

T=25

�

C. Excessive humidity will degrade MTTF.

This sensor contains gate protection circuits to provide some protection against ESD
events. The circuits will turn on when greater than 16 volts appears between any two
gate pins. Permanent damage can result if excessive current is allowed to flow under
these conditions.

CAUTION: This device contains limited protection against Electrostatic Discharge

(ESD). Devices should be handled in accordance with strict ESD procedures
for Class 0 devices (JESD22 Human Body Model) or Class A (Machine
Model). Refer to Application Note MTD/PS-0224, "Electrostatic Discharge
Control"

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IMAGE SENSOR SOLUTIONS

DC Operating Conditions

Description Symb

Min Nom Max

Unit Max

Current (mA)

Notes

Reset Drain

Vrd

11.0

11.5

0.01

Output Amplifier
Return

Vss

1.5

2.0

2.5

-0.5

Output Amplifier
Supply

Vdd

14.75

15.5

Iout

Substrate

Vsub

0.01

Output Gate

Vog

3.75

0.01

Gueard Ring

Vlg

8.0

9.0

12.0

0.01

Video Output Current

Iout

-5

-10

Notes:

1. An output load sink must be applied to Vout to activate output amplifier - see Figure below.

+15V

0.1uF

Vout

Buffered Output

140

2N3904 or equivalent

~5ma

Figure 6 Example Output Structure Load Diagram

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IMAGE SENSOR SOLUTIONS

AC Operating Condition

Description Symbol

Level

Min

Nom

Max

Unit

Effective

Capacitance

Vertical CCD Clock -
Phase 1

Low

High

-10.5

-0.5

-10.0

-9.5

1.0

V
V

6 nF

(all �V1 pins)

Vertical CCD Clock -
Phase 2

Low

High

-10.5

-0.5

-10.0

-9.5

1.0

V
V

6 nF

(all �V2 pins)

Horizontal CCD Clock
- Phase 1

Low

Amplitude

-4.5

9.5

-4.0

10.0

-3.5

10.5

V
V

50pF

Horizontal CCD Clock
- Phase 2

Low

Amplitude

-4.5

9.5

-4.0

10.0

-3.5

10.5

V
V

50pF

Reset Clock

Low

Amplitude

-3.0

5.0

-2.0

6.0

-1.75

7.0

V
V

5pF

Notes:

1. All pins draw less than 10uA DC current.
2. Capacitance values relative to VSUB.

AC Timing Conditions

Description Symbol

Min

Nom

Max

Unit

Notes

H1,

H2 Clock Frequency

MHz

1, 2, 3

Pixel Period (1 Count)

100

250

H1,

H2 Setup Time

0.5

V1,

V2 Clock Pulse Width

1.5

Reset Clock Pulse Width

Readout Time

readout

43.7

107

Integration Time

int

Line Time

tline

84.1

206

Notes:

1. 50% duty cycle values.

CTE may degrade above the nominal frequency.

Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Cross-over of
register clocks should be between 40-60% of amplitude.

R should be clocked continuously.

5. t

readout

= (520*t

line

)

6. Integration time is user specified. Longer integration times will degrade noise performance due

to dark signal fixed pattern and shot noise.

7. t

line

= (3*t

) + t

+ (796*t

) +t

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IMAGE SENSOR SOLUTIONS

Timing diagrams

Frame Timing

tReadout

Line

1 2

519

520

1 Frame = 520 Lines

tint

Pixel Timing

Vout

Vsat

Vdark

Vsub

Vodc

1 count

Line Timing

1 line = 796 Pixels

796 counts

Vpix

Line Content

Photoactive

Dark Reference

Dummy Pixels

1-10 11-14

15 - 782

783-794 795-796

Vsat Saturated pixel video output
Vdark Video output signal in no light situation, not zero due to
Vpix Pixel video output signal level, more electrons =more
Vodc Video level offset with respect to
Vsub Analog

* See Image Aquisition section

Figure 7 Timing diagrams

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IMAGE SENSOR SOLUTIONS

QUALITY ASSURANCE AND RELIABILITY

Quality Strategy: All image sensors will conform to the specifications stated in this document. This will
be accomplished through a combination of statistical process control and inspection at key points of the
production process. Typical specification limits are not guaranteed but provided as a design target. For
further information refer to ISS Application Note MTD/PS-0292, Quality and Reliability.

Replacement: All devices are warranted against failure in accordance with the terms of Terms of Sale.
This does not include failure due to mechanical and electrical causes defined as the liability of the
customer below.

Liability of the Supplier: A reject is defined as an image sensor that does not meet all of the
specifications in this document upon receipt by the customer.

Liability of the Customer: Damage from mechanical (scratches or breakage), electrostatic discharge
(ESD), or other electrical misuse of the device beyond the stated absolute maximum ratings, which
occurred after receipt of the sensor by the customer, shall be the responsibility of the customer.

Cleanliness: Devices are shipped free of mobile contamination inside the package cavity. Immovable
particles and scratches that are within the imager pixel area and the corresponding cover glass region
directly above the pixel sites are also not allowed. The cover glass is highly susceptible to particles and
other contamination. Touching the cover glass must be avoided. See ISS Application Note MTD/PS-0237,
Cover Glass Cleaning for Image Sensors, for further information.

ESD Precautions: Devices are shipped in static-safe containers and should only be handled at static-
safe workstations. See ISS Application Note MTD/PS-0224, Electrostatic Discharge Control, for handling
recommendations.

Reliability: Information concerning the quality assurance and reliability testing procedures and results are
available from the Image Sensor Solutions and can be supplied upon request. For further information
refer to ISS Application Note MTD/PS-0292, Quality and Reliability.

Test Data Retention: Image sensors shall have an identifying number traceable to a test data file. Test
data shall be kept for a period of 2 years after date of delivery.

Mechanical: The device assembly drawing is provided as a reference. The device will conform to the published
package tolerances.

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IMAGE SENSOR SOLUTIONS

ORDERING INFORMATION

Available Part Configurations

Type

Description

Glass Configuration

KAF-0402E Monochrome

KAF-0402ME Monochrome,

microlens

Please contact Image Sensor Solutions for available part numbers.

Address all inquiries and purchase orders to:

Image Sensor Solutions
Eastman Kodak Company
Rochester, New York 14650-2010
Phone: (585) 722-4385
Fax: (585) 477-4947
E-mail:

imagers@kodak.com

Kodak reserves the right to change any information contained herein without notice. All information
furnished by Kodak is believed to be accurate.

WARNING: LIFE SUPPORT APPLICATIONS POLICY

Kodak image sensors are not authorized for and should not be used within Life Support Systems without
the specific written consent of the Eastman Kodak Company. Product warranty is limited to replacement
of defective components and does not cover injury or property or other consequential damages.

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Электронный компонент: KAF-0402E

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