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Электронный компонент: KB837

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PHOTOCOUPLER
KB837
SPEC NO:DSAD1551
REV NO: V.2
DATE: MAY/07/2003 PAGE: 1 OF 8
APPROVED: J.LU
CHECKED: Tracy Deng
DRAWN: S.J.HOU
3.Solid insulation thickness between emitting diode and output phototransistor: >= 0.6mm.
5.Signal transmission between circuits of different potentials and impedances
3.Recognized by UL and CUL, file NO. E225308
GaAs light emitting diode and an NPN silicon phototransistor.
4.Programmable logic controller
3.System appliances, measuring instruments
2.Registers, copiers, automatic vending machines
2.The lead pitch is 2.54mm
1.Computer terminals
APPLICATIONS
DESCRIPTION
2.Compact dual-in-line package
1.High isolation voltage between input and output (Viso=5000 Vrms)
FEATURES
SINGLE TRANSISTOR TYPE
PHOTOCOUPLER SERIES
HIGH ISOLATION VOLTAGE
GENERAL PURPOSE
KB837:1-channel type
1.The KB837 (3-channel) is optically coupled isolators containing a
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PHOTOCOUPLER
KB837
SPEC NO:DSAD1551
REV NO: V.2
DATE:MAY/07/2003 PAGE: 2 OF 8
APPROVED: J.LU
CHECKED: Tracy Deng
DRAWN: S.J.HOU
*
Absolute Maximum Ratings (T
=
=25


C)
*1
40 to 60% RH,AC for 1 minute.
*2
For 10 seconds.
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TOLERANCE : 0.5[0.02 ] UNLESS OTHERWISE NOTED.
7, 9, 11. Emitter
Internal connection
diagram
8, 10, 12. Collector
* PACKAGE DIMENSIONS (UNIT: mm)
3[0.118]
7[0.276]
0.5 [0.02] 0.1
2, 4, 6. Cathode
1, 3, 5. Anode
KB837
6.5[0.256]
K
B
817
K
B
817
K
B
817
Anode
0.9 [0.035] 0.2
1.2 [0.047] 0.3
14.74 [0.580]
0.4[0.01
5
]
MIN.
1
mark
3.5 [0.138]
2.7 [0.106]
6
Top View
12
2.54 [0.1] 0.25
7
DIP Type
0.25 [0.01] 0.1
?
?
7.62 [0.3] 0.3
1 2 3
5 6
4
10
11
12
7
8
9
? = 0 to 13
:
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PHOTOCOUPLER
KB837
SPEC NO:DSAD1551
REV NO: V.2
DATE: MAY/07/2003 PAGE: 3 OF 8
APPROVED: J.LU
CHECKED: Tracy Deng
DRAWN: S.J.HOU
I
CTR= X 100%
80 to 600
A,B,C or D
50 to 600
L
,
A,B,C,D or No mark
300 to 600
D
80 to 260
200 to 600
130 to 400
80 to 400
130 to 600
C or D
B,C or D
A,B or C
B or C
A or B
80 to 160
50 to 100
200 to 400
130 to 260
A
C
B
L
Rank mark
.
CTR (%)
I
F
=5mA, V
CE
=5V
50
CTR
Current transfer ratio
Collector-emitter saturation voltage
Rise time
Fall time
Classification table of current transfer ratio is shown below.
Response time
Ic
Cut-off frequency
Transfer
charact-
eristics
t
r
V
CE
=2V, I
C
=2mA
R
L
=100
[
t
f
I
F
=20mA, I
C
=1mA
V
CE
=5V, I
C
=2mA
R
L
=100
[
, -3dB
c
f
V
CE(
sat
)
Input
Peak forward voltage
Reverse current
Collector dark current
Output
*1
Forward voltage
Parameter
V
FM
I
FM
=0.5A
I
CEO
I
R
V
CE
=20V,I
F
=0mA
V
R
=4V
V
F
Symbol
I
F
=20mA
Conditions
Min.
600
%
C
4
18
3
18
C
80
kH
z
0.1
0.2
V
V
3.0
-7
10
A
10
C
1.2
1.4
V
Max.
Typ.
Unit
* Electro-optical Characteristics
Model No
.
KB837L
KB837A
KB837B
KB837C
KB837D
KB837AB
KB837BC
KB837CD
KB837AC
KB837BD
KB837AD
KB837
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PHOTOCOUPLER
KB837
SPEC NO:DSAD1551
REV NO: V.2
DATE:MAY/07/2003 PAGE: 4 OF 8
APPROVED: J.LU
CHECKED: Tracy Deng
DRAWN: S.J.HOU
Fig. 3 Collector Current vs.
Collector-emitter Voltage
Fig. 4 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig. 1 Current Transfer Ratio vs.
Forward Current
Fig. 2 Forward Current vs.
Forward voltage
Fig. 5 Collector-emitter Saturation
Voltage vs. Ambient Temperature
Fig. 6 Collector Dark Current vs.
Ambient Temperature
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PHOTOCOUPLER
KB837
SPEC NO:DSAD1551
REV NO: V.2
DATE: MAY/07/2003 PAGE: 5 OF 8
APPROVED: J.LU
CHECKED: Tracy Deng
DRAWN: S.J.HOU
g
[
Fig. 10 Frequency Response
Test Circuit for Frequency Response
[
[
[
Fig. 9 Response Time vs.
Load Resistance
Fig. 7 Forward Current vs.
Ambient Temperature
Fig. 8 Collector Power Dissipation vs.
Ambient Temperature
Test Circuit for Response Time