2001. 10. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTB1234T.
MAXIMUM RATINGS (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=8V, I
C
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
80
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
50
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
C
=10 A, I
C
=0
10
V
DC Current Gain
h
FE
1
V
CE
=2V, I
C
=10mA
5000
-
-
h
FE
2
V
CE
=2V, I
C
=100mA
4000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=100 A
-
0.9
1.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=100 A
-
1.5
2.0
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
DC
I
C
200
mA
Pulse
I
CP
400
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Type Name
Marking
Lot No.
L Y
COLLECTOR
BASE
EMITTER
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8 )
2001. 10. 23
2/2
KTD1854T
Revision No : 0
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
1
2
3
4
5
20
40
60
80
100
I =0
A
1A
2A
3A
4A
5A
6A
B
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
0.6
BE
0
I - V
C
BE
0.8
1.0
1.2
1.4
1.8
1.6
40
80
120
160
200
V - I
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (V)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
COLLECTOR CURRENT I (mA)
C
V =2V
CE
V =2V
CE
COLLECTOR-EMITTER SATURATION
1
CE(sat)
1K
COLLECTOR CURRENT I (mA)
3
100
200
C
V - I
CE(sat)
C
VOLTAGE V (V)
10
30
3K
5K
10K
30K
50K
100K
I /I =1000
C
I /I =1000
C B
B
Ta=75 C
Ta=25 C
Ta=-25 C
0.5
0.3
50
0.2
3
300
100
30
10
1
0.5
5
300
100
30
10
50
1
3
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=7
5
C
Ta=25 C
Ta=-25
C
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
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