2002. 12. 5
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SEMICONDUCTOR
TECHNICAL DATA
KTC812T
Revision No : 1
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V
EBO
=25V(Min.)
High Reverse h
FE
: Reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on Resistance : R
ON
=1 (Typ.), (I
B
=5mA)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
1
2
2
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B: 350 1200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
25
V
Collector Current
I
C
300
mA
Base Current
I
B
60
mA
Collector Power Dissipation
P
C
*
0.9
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=25V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350
-
1200
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
-
0.042
0.3
V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=4mA
-
0.61
-
V
Transition Frequency
f
T
V
CE
=6V, I
C
=4mA
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.8
7
pF
Switching
Time
Turn-on Time
t
on
1k
3k
4k
50
10V
CC
V =12V
BB
V =-3V
1s
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
-
160
-
nS
Storage Time
t
stg
-
500
-
Fall Time
t
f
-
130
-
h Rank
FE
Type Name
Marking
Lot No.
M
1
2
3
6
5
4
* Package mounted on a ceramic board (600
0.8 )
1
Q1
Q2
2
3
6
5
4
EQUIVALENT CIRCUIT (TOP VIEW)
EPITAXIAL PLANAR NPN TRANSISTOR
2002. 12. 5
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KTC812T
Revision No : 1
COLLECTOR CURRENT I (mA)
0
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
(Q , Q COMMON)
10
TRANSTION FREQUENCY f (MHz)
5
T
500
-3
-1
-0.3
-0.1
EMITTER CURRENT I (mA)
E
f - I
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.3
1
3
10
C
50
FE
h - I
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
C
CE
I - V (REVERSE REGION)
C
CE
1
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
0.1
0.3
1
3
C
CE(sat)
10
500
V - I
2
4
6
8
10
10
20
30
40
50
COMMON
EMITTER
Ta=25 C
I =20A
B
160
140
120
100
80
60
40
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
COMMON
EMITTER
Ta=25 C
50
40
30
20
I =10A
0
B
FE
C
30
100
100
300
500
1k
3k
5k
COMMON EMITTER
Ta=100 C
V =6V
CE
V =2V
CE
Ta=25 C
Ta=-25 C
CE(sat)
C
VOLTAGE V (mV)
10
30
100
300
3
5
30
50
100
300
COMMON EMITTER
I /I =10
C B
0.4
0.8
1.2
1.6
100
200
300
COMMON EMITTER
V =2V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
T
E
-10
-30
-100
30
50
100
300
COMMON EMITTER
V =6V
Ta=25 C
CE
1
2
2002. 12. 5
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KTC812T
Revision No : 1
COLLECTOR-EMITTER ON RESISTANCE
ON
0.3
0.3
0.1
0.03
0.01
BASE CURRENT I (mA)
B
R - I
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0.3 0.5
1
3
ob
1
COLLECTOR OUTPUT CAPACITANCE
10
ob
CB
C (pF)
5
10
30
3
5
30
f=1MHz
I =0
Ta=25 C
E
ON
B
R (
)
1
3
10
0.5
1
3
5
10
30
50
100
1k
10k
I
B
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
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