2001. 12. 5
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4075V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
High h
FE
: h
FE
=70~700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA2014V.
Very Small Package.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
70
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.5
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA,
f=1kHz, Rg=10k
-
1.0
10
dB
Note : h
FE
Classification O(2):70 140, Y(4):120 240, GR(6):200 400, BL(8):350~700
h Rank
Type Name
Marking
L
FE
2001. 12. 5
2/3
KTC4075V
Revision No : 1
C
COLLECTOR CURRENT I (mA)
0
40
30
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
0.01
0.1
COLLECTOR CURRENT I (mA)
C
V - I
1
2
3
4
5
6
7
80
120
160
200
240
I =0.2mA
B
COMMON EMITTER
Ta=25 C
FE
C
10
30
100
300
50
100
300
500
1k
CE(sat)
C
VOLTAGE V (V)
CE(sat)
0.3
1
3
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
Ta
=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C
B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
0.3
1
10
30
100
300
3
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
Ta=25 C
C
B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =10V
Ta=25 C
CE
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
10
30
100
300
1k
0.5
0
1.0
2.0
3.0
5.0
6.0
10
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
3k
COMMON
EMITTER
V =6V
CE
Ta=10
0
C
Ta=25
C
Ta=-2
5
C
2001. 12. 5
3/3
KTC4075V
Revision No : 1
C
COLLECTOR POWER DISSIPATION P (mW)
0
h PARAMETER
0.1
10
3
1
0.5
COLLECTOR-EMITTER VOLTAGE V (V)
CE
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
h PARAMETER - V
h PARAMETER - I
C
COLLECTOR CURRENT I (mA)
0.1
1
3
0.1
h PARAMETER
C
10
30 50
0.5
5
0.3
0.5
1
3
5
10
30
50
100
300
500
1k
2k
COMMON EMITTER
V =12V, f=270Hz
Ta=25 C
CE
BL
GR
Y
O
h
fe
BL
GR
Y
O
BL
GR
Y
O
BL
GR
Y
O
ie
h
xk
ie
h
xk
h
x
oe
h
x10
re
-4
h
x10
re
-4
CE
30
100
300
0.3
1
3
10
30
100
300
1k
2k
BL
GR
Y
O
h
fe
BL
GR
Y
O
BL
GR
Y
O
BL
GR
Y
O
COMMON EMITTER
I =2mA, Ta=25 C
C
25
50
75
100
150
25
50
125
100
125
125
h
x
oe
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